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Электронный компонент: 30ETH06

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30ETH06
30ETH06S
30ETH06-1
Bulletin PD-20748 rev. D 08/01
t
rr
= 28ns typ.
I
F(AV)
= 30Amp
V
R
= 600V
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175C Operating Junction Temperature
Dual Diode Center Tap
Features
Description/ Applications
Absolute Maximum Ratings
Hyperfast Rectifier
V
RRM
Peak Repetitive Reverse Voltage
600
V
I
F(AV)
Average Rectifier Forward Current
@ T
C
= 103C
30
A
I
FSM
Non Repetitive Peak Surge Current
@ T
J
= 25C
200
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 65 to 175
C
Parameters
Max
Units
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
www.irf.com
30ETH06
TO-220AC
Case Styles
30ETH06S
D
2
PAK
30ETH06-1
TO-262
Anode
1
3
Base
Cathode
2
N/C
Anode
1
3
Cathode
Base
Cathode
Anode
1
3
2
N/C
2
30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
www.irf.com
V
BR
,
V
r
Breakdown Voltage,
600
-
-
V
I
R
= 100A
Blocking Voltage
V
F
Forward Voltage
-
2.0
2.6
V
I
F
= 30A, T
J
= 25C
-
1.34 1.75
V
I
F
= 30A, T
J
= 150C
I
R
Reverse Leakage Current
-
0.3
50
A
V
R
= V
R
Rated
-
60
500
A
T
J
= 150C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
33
-
pF
V
R
= 600V
L
S
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time
-
28
35
ns
I
F
= 1.0A, di
F
/dt = 50A/s, V
R
= 30V
-
31
-
T
J
= 25C
77
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
3.5
-
A
T
J
= 25C
-
7.7
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
65
-
nC
T
J
= 25C
-
345
-
T
J
= 125C
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
I
F
= 30A
V
R
= 200V
di
F
/dt = 200A/s
Parameters
Min Typ Max Units Test Conditions
Parameters
Min
Typ
Max
Units
T
J
Max. Junction Temperature Range
- 65
-
175
C
T
Stg
Max. Storage Temperature Range
- 65
-
175
R
thJC
Thermal Resistance, Junction to Case
Per Leg
-
0.7
1.1
C/W
R
thJA
Thermal Resistance, Junction to Ambient
Per Leg
-
-
70
R
thCS
Thermal Resistance, Case to Heatsink
-
0.2
-
Wt
Weight
-
2.0
-
g
-
0.07
-
(oz)
Mounting Torque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Thermal - Mechanical Characteristics
!
Typical Socket Mount
"#
Mounting Surface, Flat, Smooth and Greased
"
!
3
30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
www.irf.com
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Reverse Current - I
R
(A)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
T = 175C
T = 150C
T = 25C
J
J
J
0.0001
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
600
25C
Tj = 175C
100C
125C
150C
10
100
1000
0
100
200
300
400
500
600
T = 25C
J
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
4
30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
www.irf.com
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
(3) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
Average Forward Current - I
F
(AV)
(A)
Average Forward Current - I
F
(AV)
(A)
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
Allowable Case Temperature (C)
Average Power Loss ( Watts )
trr ( n
s
)
Qrr ( nC )
di
F
/dt (A/s )
di
F
/dt (A/s )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
0
10
20
30
40
50
60
70
80
90
100
1000
IF = 30 A
IF = 15 A
R
J
J
V = 200V
T = 125C
T = 25C
80
100
120
140
160
180
0
5
10 15 20 25 30 35 40 45
DC
see note (3)
Square wave (D = 0.50)
Rated Vr applied
0
10
20
30
40
50
60
70
80
90
0
5
10 15 20 25 30 35 40 45
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0
200
400
600
800
1000
1200
100
1000
IF = 30 A
IF = 15 A
R
J
J
V = 200V
T = 125C
T = 25C
5
30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
www.irf.com
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
di
F
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q rr =
t rr x I RRM
2