SCHOTTKY RECTIFIER
30 Amp, 150V
30LJQ150
Major Ratings and Characteristics
Description/Features
6/28/01
CASE STYLE
IR Case Style SMD-0.5
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1
Characteristics
30LJQ150
Units
I
F(AV)
30
A
V
RRM
150
V
I
FSM
@ tp = 8.3ms half-sine
140
A
V
F
@ 30Apk, T
J
=125C
0.92
V
T
J
, T
stg
Operating and storage
-55 to 150
C
CATHODE ANODE ANODE
HIGH EFFICIENCY SERIES
The 30LJQ150 Schottky rectifier has been expressly designed
to meet the rigorous requirements of hi-rel environments. It is
packaged in the hermetic surface mount SMD-0.5 ceramic
package. The device's forward voltage drop and reverse
leakage current are optimized for the lowest power loss and the
highest circuit efficiency for typical high frequency switching
power supplies and resonent power converters. Full MIL-PRF-
19500 quality conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Surface Mount
Lightweight
PD-94063A
30LJQ150
2
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Part number
30LJQ150
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
150
Parameters
Limits Units
Conditions
I
F(AV)
Max. Average Forward Current
30
A
50% duty cycle @ T
C
= 84C, square waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
140
A
@ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Parameters
Limits
Units
Conditions
T
J
Max.Junction Temperature Range
-55 to 150
C
T
stg
Max. Storage Temperature Range
-55 to 150
C
R
thJC
Max. Thermal Resistance, Junction
1.82
C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
1.0
g
Die Size (Typical)
125X125 mils
Case Style
SMD-0.5
Thermal-Mechanical Specifications
Q
Pulse Width < 300s, Duty Cycle < 2%
R
Pins 2 and 3 externally tied together
Parameters
Limits
Units
Conditions
V
FM
Max. Forward Voltage Drop
1.07
V
@ 15A
See Fig. 1
Q
1.26
V
@ 30A
T
J
= -55C
R
1.56
V
@ 60A
0.96
V
@ 15A
1.18
V
@ 30A
T
J
= 25C
R
1.49
V
@ 60A
0.75
V
@ 15A
0.92
V
@ 30A
T
J
= 125C
R
1.21
V
@ 60A
I
RM
Max. Reverse Leakage Current
0.12
mA
T
J
= 25C
See Fig. 2
Q
1.2
mA
T
J
= 100C
V
R
= rated V
R
R
6.0
mA
T
J
= 125C
C
T
Max. Junction Capacitance
310
pF
V
R
= 5V
DC
( 1MHz, 25C )
R
L
S
Typical Series Inductance
4.8
nH
Measured from center of cathode pad to center of
anode pad
Electrical Specifications
30LJQ150
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3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0
20
40
60
80
100
120
140
160
Reverse Voltage -VR (V)
10
100
1000
Junction Capacitance - C
T
(pF)
TJ = 25C
0
20
40
60
80
100
120
140
160
Reverse Voltage - VR (V)
0.0001
0.001
0.01
0.1
1
10
Reverse Current - I
R
( mA )
125C
75C
25C
100C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - I
F
(A)
Tj = -55C
Tj = 125C
Tj = 25C
30LJQ150
4
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Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
0
10
20
30
40
50
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
180
Allowable Case Temprature - (
C)
30LJQ150
R thJC = 1.8C/W
DC
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 6/01
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