SCHOTTKY RECTIFIER
30 Amp, 100V
30LJQ100
Major Ratings and Characteristics
Description/Features
10/04/00
CASE STYLE
IR Case Style SMD-0.5
www.irf.com
1
Characteristics
30LJQ100
Units
I
F(AV)
30
A
V
RRM
100
V
I
FSM
@ tp = 8.3ms half-sine
250
A
V
F
@ 20Apk, T
J
=125C
0.73
V
T
J
, T
stg
Operating and storage
-55 to 150
C
CATHODE ANODE ANODE
HIGH EFFICIENCY SERIES
The 30LJQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Surface Mount
Lightweight
PD-93970
30LJQ100
2
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Part number
30LJQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
Parameters
Limits Units
Conditions
I
F(AV)
Max. Average Forward Current
30
A
50% duty cycle @ T
C
= 88C, square waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
250
A
@ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Parameters
Limits
Units
Conditions
V
FM
Max. Forward Voltage Drop
0.98
V
@ 20A
See Fig. 1
1.11
V
@ 30A
T
J
= -55C
1.43
V
@ 60A
0.90
V
@ 20A
1.04
V
@ 30A
T
J
= 25C
1.35
V
@ 60A
0.73
V
@ 20A
0.81
V
@ 30A
T
J
= 125C
1.03
V
@ 60A
I
RM
Max. Reverse Leakage Current
0.04
mA
T
J
= 25C
See Fig. 2
1.8
mA
T
J
= 100C
V
R
= rated V
R
7.0
mA
T
J
= 125C
C
T
Max. Junction Capacitance
450
pF
V
R
= 5V
DC
( 1MHz, 25C )
L
S
Typical Series Inductance
4.8
nH
Measured from center of cathode pad to center of
anode pad
Electrical Specifications
Parameters
Limits
Units
Conditions
T
J
Max.Junction Temperature Range
-55 to 150
C
T
stg
Max. Storage Temperature Range
-55 to 150
C
R
thJC
Max. Thermal Resistance, Junction
2.0
C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
1.0
g
Die Size (Typical)
105X125 mils
Case Style
SMD-0.5
Thermal-Mechanical Specifications
Pulse Width < 300s, Duty Cycle < 2%
Pins 2 and 3 externally tied together
30LJQ100
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3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - I
F
(A)
Tj = -55C
Tj = 125C
Tj = 25C
0
10
20
30
40
50
60
70
80
90
100
Reverse Voltage -VR (V)
100
1000
Junction Capacitance - C
T
(pF)
TJ = 25C
0
10
20
30
40
50
60
70
80
90
100
Reverse Voltage - VR (V)
0.0001
0.001
0.01
0.1
1
10
Reverse Current - I
R
( mA )
125C
75C
25C
100C
30LJQ100
4
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Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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Data and specifications subject to change without notice. 10/00
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
0
10
20
30
40
50
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
180
Allowable Case Temprature - (C)
30LJQ100
R thJC = 2.0C/W
DC
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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