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Электронный компонент: 30SLJQ045

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SCHOTTKY RECTIFIER
30 Amp, 45V
30SLJQ045
Major Ratings and Characteristics
Description/Features
10/03/00
CASE STYLE
IR Case Style SMD-0.5
www.irf.com
1
Characteristics
30SLJQ045 Units
I
F(AV)
30
A
V
RRM
45
V
I
FSM
@ tp = 8.3ms half-sine
270
A
V
F
@ 30Apk, T
J
=125C
0.71
V
T
J
, T
stg
Operating and storage
-55 to 150
C
CATHODE ANODE ANODE
PD - 93949A
HIGH EFFICIENCY SERIES
The 30SLJQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Surface Mount
Lightweight
30SLJQ045
2
www.irf.com
Part number
30SLJQ045
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
45
Parameters
Limits Units
Conditions
I
F(AV)
Max. Average Forward Current
30
A
50% duty cycle @ T
C
= 97C, square waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
270
A
@ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Parameters
Limits
Units
Conditions
V
FM
Max. Forward Voltage Drop
0.58
V
@ 15A
See Fig. 1
0.63
V
@ 20A
T
J
= -55C
0.70
V
@ 30A
0.53
V
@ 15A
0.59
V
@ 20A
T
J
= 25C
0.70
V
@ 30A
0.48
V
@ 15A
0.57
V
@ 20A
T
J
= 125C
0.71
V
@ 30A
I
RM
Max. Reverse Leakage Current
0.4
mA
T
J
= 25C
See Fig. 2
32
mA
T
J
= 100C
V
R
= rated V
R
120
mA
T
J
= 125C
C
T
Max. Junction Capacitance
1230
pF
V
R
= 5V
DC
( 1MHz, 25C )
L
S
Typical Series Inductance
4.8
nH
Measured from center of cathode pad to center of
anode pad
Electrical Specifications
Parameters
Limits
Units
Conditions
T
J
Max.Junction Temperature Range
-55 to 150
C
T
stg
Max. Storage Temperature Range
-55 to 150
C
R
thJC
Max. Thermal Resistance, Junction
1.6
C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
1.0
g
Die Size (Typical)
115X170 mils
Case Style
SMD-0.5
Thermal-Mechanical Specifications
Pulse Width < 300s, Duty Cycle < 2%
Pins 2 and 3 externally tied together
30SLJQ045
www.irf.com
3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - I
F
(A)
Tj = -55C
Tj = 125C
Tj = 25C
0
10
20
30
40
50
Reverse Voltage - VR (V)
0.01
0.1
1
10
100
1000
Reverse Current - I
R
( mA )
125C
100C
75C
25C
0
10
20
30
40
50
Reverse Voltage -VR (V)
100
1000
10000
Junction Capacitance - C
T
(pF)
TJ = 25C
30SLJQ045
4
www.irf.com
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
0
5
10
15
20
25
30
35
40
45
50
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
180
Allowable Case Temprature - (C)
30SLJQ045
R thJC = 1.6 C/W
DC
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)