1
50MT060WH
I27120 rev. D 02/03
V
CES
= 600V
V
CE(on) typ.
= 2.3V @
V
GE
= 15V, I
C
= 50A
T
C
= 25C
"HALF-BRIDGE" IGBT MTP
Warp Speed IGBT
Absolute Maximum Ratings
V
CES
Collector-to-Emitter Voltage
600
V
I
C
Continuos Collector Current
@ T
C
= 25C
114
A
@ T
C
= 109C
50
I
CM
Pulsed Collector Current
350
I
LM
Peak Switching Current
350
I
F
Diode Continuous Forward Current
@ T
C
= 109C
34
I
FM
Peak Diode Forward Current
200
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation
@ T
C
= 25C
658
W
@ T
C
= 100C
263
Parameters
Max
Units
Gen. 4 Warp Speed IGBT Technology
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
Very Low Conduction and Switching Losses
Optional SMT Thermistor (NTC)
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
UL E78996 approved
Features
Optimized for Welding, UPS and SMPS
Applications
Operating Frequencies > 20 kHz Hard
Switching,>200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Benefits
M
MTP
www.irf.com
50MT060WH
I27120 rev. D 02/03
2
www.irf.com
R
0
(1)
Resistance
30
k
T
0
= 25C
(1) (2)
Sensitivity index of the thermistor
4000
K
T
0
= 25C
material
T
1
= 85C
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V
V
GE
= 0V, I
C
= 500A
V
CE(on)
Collector-to-Emitter Voltage
2.3
3.15
V
GE
= 15V, I
C
= 50A
2.5
3.2
V
GE
= 15V, I
C
= 100A
1.72
2.17
V
GE
= 15V, I
C
= 50A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3
6
I
C
= 0.5mA
I
CES
Collector-to-Emiter Leaking
0.4
mA
V
GE
= 0V, V
CE
= 600V
Current
10
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
1.58
1.80
V
I
F
= 50A, V
GE
= 0V
1.49
1.68
I
F
= 50A, V
GE
= 0V, T
J
= 150C
1.9
2.17
I
F
= 100A, V
GE
= 0V, T
J
= 25C
I
GES
Gate-to-Emitter Leakage Current
250
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Q
g
Total Gate Charge (turn-on)
331
385
nC
I
C
= 52A
Q
ge
Gate-Emitter Charge (turn-on)
44
52
V
CC
= 400V
Q
gc
Gate-Collector Charge (turn-on)
133
176
V
GE
= 15V
E
on
Turn-On Switching Loss
0.26
mJ
Internal gate resistors
(
see Electrical Diagram
)
E
off
Turn-Off Switching Loss
1.2
I
C
= 50A, V
CC
= 480V, V
GE
= 15V, L = 200H
E
ts
Total Switching Loss
1.46
Energy losses include tail and diode reverse
recovery
E
on
Turn-On Switching Loss
0.73
mJ
Internal gate resistors
(
see Electrical diagram
)
E
off
Turn-Off Switching Loss
1.66
I
C
= 50A, V
CC
= 480V, V
GE
= 15V, L = 200H
E
ts
Total Switching Loss
2.39
Energy losses include tail and diode reverse
recovery,
T
J
= 150C
C
ies
Input Capacitance
7100
pF
V
GE
= 0V
C
oes
Output Capacitance
510
V
CC
= 30V
C
res
Reverse Transfer Capacitance
140
f = 1.0 MHz
trr
Diode Reverse Recovery Time
82
97
ns
V
CC
= 200V, I
C
= 50A
Irr
Diode Peak Reverse Current
8.3
10.6
A
di/dt = 200A/s
Qrr
Diode Recovery Charge
340
514
nC
trr
Diode Reverse Recovery Time
137
153
ns
V
CC
= 200V, I
C
= 50A
Irr
Diode Peak Reverse Current
12.7
14.8
A
di/dt = 200A/s
Qrr
Diode Recovery Charge
870
1132
nC
T
J
= 125C
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Thermistor Specifications
Parameters
Min Typ Max Units Test Conditions
R
0
R
1
(2)
= exp
[
( )]
1
T
0
(1)
T
0
,T
1
are thermistor's temperatures
1
T
1
I27120 rev. D 02/03
3
50MT060WH
www.irf.com
Thermal- Mechanical Specifications
T
J
Operating Junction
IGBT, Diode
- 40
150
C
Temperature Range
Thermistor
- 40
125
T
STG
Storage Temperature Range
- 40
125
R
thJC
Junction-to-Case
IGBT
0.38
C/ W
Diode
0.8
R
thCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance
(3)
(
external shortest distance in air
5.5
mm
between two terminals)
Creepage
(3)
(
shortest distance along the external
8
surface of the insulating material between 2 terminals
)
T
Mounting torque to heatsink
(4)
3 10%
Nm
Wt
Weight
66
g
Parameters
Min
Typ
Max
Units
(3) Standard version only i.e. without optional thermistor
(4) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
Fig. 1 - Typical Output Characteristics
I
C
, Collector-to-Emitter Current (A)
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 2 - Maximum Collector Current vs. Case
Temperature
Maximum DC Collector Current (A)
T
C
, Case Temperature (C)
0
20
40
60
80
100
120
25
50
75
100
125
150
1
10
100
0.1
1
10
Vge = 15V
20s Pulse Width
T = 150C
J
T = 25C
J
50MT060WH
I27120 rev. D 02/03
4
www.irf.com
Fig. 3 - Typical Collector-to-Emitter Voltage vs.
Junction Temperature
V
CE
, Collector-to-Emitter Voltage (V)
T
J
, Junction Temperature (C)
Fig. 4 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
V
GE
, Gate-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Instantaneous Forward Current - I
F
(A)
Forward Voltage Drop - V
FM
(V)
1
1.5
2
2.5
3
20
40
60
80
100 120 140 160
I = 100A
C
I = 50A
C
I = 20A
C
0
4
8
12
16
20
0
100
200
300
400
Vcc = 400V
Ic = 52A
1
10
100
0.4
0.8
1.2
1.6
2
2.4
T = 150C
T = 125C
T = 25C
J
J
J
I27120 rev. D 02/03
5
50MT060WH
www.irf.com
t
rr
(ns)
di
f
/dt - (A/s)
Fig. 6 - Typical Reverse Recovery vs. di
f
/dt
I
RRM
(A)
di
f
/dt - (A/s)
Fig. 7 - Typical Reverse Recovery Current vs. di
f
/dt
60
80
100
120
140
160
100
1000
Vr = 200V
I = 50A, Tj = 125C
I = 50A, Tj = 25C
F
F
Q
RR
(nC)
di
f
/dt - (A/s)
Fig. 8 - Typical Stored Charge vs. di
f
/dt
0
500
1000
1500
2000
100
1000
Vr = 200V
I = 50A, Tj = 125C
I = 50A, Tj = 25C
F
F
1
10
100
100
1000
Vr = 200V
I = 50A, Tj = 125C
I = 50A, Tj = 25C
F
F
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