I
T(AV)
80
A
@ T
C
85
C
I
T(RMS)
125
A
I
TSM
@
50Hz
1900
A
@ 60Hz
1990
A
I
2
t
@
50Hz
18
KA
2
s
@ 60Hz
16
KA
2
s
V
DRM
/V
RRM
400 to 1200
V
t
q
typical
110
s
T
J
- 40 to 125
C
Parameters
80RIA
Unit
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Features
Hermetic glass-metal seal
International standard case TO-209AC (TO-94)
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
PHASE CONTROL THYRISTORS
Stud Version
80RIA SERIES
1
80A
Bulletin I25201 rev. B 03/03
www.irf.com
80RIA Series
2
Bulletin I25201 rev. B 03/03
www.irf.com
I
T(AV)
Max. average on-state current
80
A
180 conduction, half sine wave
@ Case temperature
85
C
I
T(RMS)
Max. RMS on-state current
125
A
DC @ 75C case temperature
I
TSM
Max. peak, one-cycle
1900
t = 10ms
No voltage
non-repetitive surge current
1990
t = 8.3ms
reapplied
1600
t = 10ms
100% V
RRM
1675
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
18
t = 10ms
No voltage
Initial T
J
= T
J
max.
16
t = 8.3ms
reapplied
12.7
t = 10ms
100% V
RRM
11.7
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
180.5
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.60
V
I
pk
= 250A, T
J
= 25C t
p
= 10ms sine pulse
I
H
Maximum holding current
200
I
L
Typical latching current
400
0.99
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
2.29
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.84
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
80RIA
Units
Conditions
1.13
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
m
V
A
mA
T
J
= 25C, anode supply 12V resistive load
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= 125C
V
V
mA
40
400
500
80RIA
80
800
900
15
120
1200
1300
80RIA Series
3
Bulletin I25201 rev. B 03/03
www.irf.com
di/dt
Max. non-repetitive rate of rise
T
J
= 125C, V
d
= rated V
DRM
, I
TM
= 2xdi/dt snubber
of turned-on current
300
A/s 0.2F, 15
, Gate pulse: 20V, 65
, t
p
= 6s, t
r
= 0.5s
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15
source, t
p
= 6s, t
r
= 0.1s,
V
d
= rated V
DRM
,
I
TM
= 50Adc,
T
J
= 25C.
I
TM
= 50A, T
J
= T
J
max, di/dt
= -5A/s min., V
R
= 50V,
dv/dt
= 20V/s, Gate bias: 0V 25
, t
p
= 500s
dv/dt Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
Parameter
80RIA
Units
Conditions
15
mA
T
J
= 125C rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
12
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
3
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
270
T
J
= - 40C
to trigger
120
mA
T
J
= 25C
60
T
J
= 125C
V
GT
Max. DC gate voltage required
3.5
T
J
= - 40C
to trigger
2.5
V
T
J
= 25C
1.5
T
J
= 125C
I
GD
DC gate current not to trigger
6
mA
Parameter
80RIA
Units
Conditions
Triggering
W
20
10
V
T
J
= T
J
max, t
p
5ms
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
Parameter
80RIA
Units
Conditions
Switching
s
500
V/s
T
J
= 125C exponential to 67% rated V
DRM
t
d
Typical delay time
1
t
q
Typical turn-off time
110
80RIA Series
4
Bulletin I25201 rev. B 03/03
www.irf.com
180
0.042
0.030
120
0.050
0.052
90
0.064
0.070
K/W
T
J
= T
J
max.
60
0.095
0.100
30
0.164
0.165
Ordering Information Table
1
-
I
TAV
x 10A
2
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3
-
RIA = Essential part number
4
-
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
5
-
None = Stud base 1/2"-20UNF- 2A threads
NOTE: For Metric Device M12 x 1.75 E6 Contact factory
4
8
0
RIA 120
Device Code
1
2
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, 10%
15.5 (137)
Non lubricated threads
14 (120)
Lubricated threads
wt
Approximate weight
130
g
Parameter
80RIA
Units
Conditions
0.30
DC operation
0.1
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
C
K/W
Nm
(lbf-in)
3
Case style
TO-209AC(TO-94)
See Outline Table
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
80RIA Series
5
Bulletin I25201 rev. B 03/03
www.irf.com
Outline Table
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
WHITE SHRINK
C.S. 0.4 mm 2
215 (8.46)
10 (0.39)
WHITE GATE
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA.
21 (
0
.
8
3
)
10
(
0
.
39)
M
A
X
.
1
57 (
6
.
18)
17
0 (
6
.
6
9)
(.0006 s.i.)
GLASS METAL SEAL
8.5 (0.3) DIA.
16.5 (0.65) MAX.
23.5 (0.92) MAX. DIA.
MA
X
.
24 (
0
.
9
4
)
M
A
X
.
55
(
2
.
17)
M
I
N
.
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.5 (0.10) MAX.
20
(0
.7
9)
M
IN
.
1/2"-20UNF-2A *
SW 27
29.5 (1.16) MAX.
9.
5
(0
.3
7)
M
IN
.
AMP. 280000-1
REF-250
* FOR METRIC DEVICE: M12 X 1.75 E6
CONTACT FACTORY
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0
10 20 30 40 50 60 70 80 90
M
a
x
i
mu
m
A
l
l
o
wabl
e
C
a
s
e
T
e
mp
e
r
atu
r
e
(
C
)
30
60
90
120
180
Average On-state Current (A)
Conduc tion Angle
80RIA Series
R (DC) = 0.30 K/ W
thJC
70
80
90
100
110
120
130
0
20
40
60
80
100 120 140
DC
30
60
90
120
180
Average On-state Current (A)
Ma
x
i
m
u
m A
l
l
o
w
a
b
l
e Ca
s
e
T
e
m
p
e
r
a
t
u
r
e
(
C
)
Conduction Period
80RIA Series
R (DC) = 0.30 K/ W
thJC
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