Semiconductor Group
1
Dec-06-1995
BUP 200 D
IGBT With Antiparallel Diode
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Including fast free-wheel diode
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 200 D
1200V 3.6A
TO-220 AB
Q67040-A4420-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
2.4
3.6
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
4.8
7.2
Diode forward current
T
C
= 90 C
I
F
8
Pulsed diode current,
t
p
= 1 ms
T
C
= 25 C
I
Fpuls
48
Power dissipation
T
C
= 25 C
P
tot
50
W
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Semiconductor Group
2
Dec-06-1995
BUP 200 D
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
IGBT thermal resistance, chip case
R
thJC
3.1
K/W
Diode thermal resistance, chip case
R
thJC
D
3.1
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.1 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 1.5 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 1.5 A,
T
j
= 125 C
V
CE(sat)
-
-
3.8
2.8
4.3
3.3
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
I
CES
-
-
0.275
mA
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 1.5 A
g
fs
-
0.6
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
iss
-
225
320
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
oss
-
25
40
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
rss
-
13
24
Semiconductor Group
3
Dec-06-1995
BUP 200 D
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 1.5 A
R
Gon
= 100
t
d(on)
-
30
50
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 1.5 A
R
Gon
= 100
t
r
-
20
30
nS
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 1.5 A
R
Goff
= 100
t
d(off)
-
170
250
ns
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 1.5 A
R
Goff
= 100
t
f
-
15
25
Total turn-off loss energy
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 1.5 A
R
Goff
= 100
E
off
-
0.25
-
mWs
Free-Wheel Diode
Diode forward voltage
I
F
= 4 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 4 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
1.9
2.3
-
3
V
Reverse recovery time
I
F
= 4 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/
dt = -800 A/s
T
j
= 25 C
T
j
= 125 C
t
rr
-
-
60
-
100
-
ns
Reverse recovery charge
I
F
= 4 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/
dt = -800 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
1
-
1.8
-
C
Semiconductor Group
5
Dec-06-1995
BUP 200 D
Typ. output characteristics
I
C
= f
(
V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125
C
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
P
= 80 s,
V
CE
= 20 V,
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (V
GE
)
parameter:
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (
V
GE
)
parameter:
T
j
= 125 C
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