1
HFA80FA120
Bulletin PD-20395 rev. A 01/02
V
R
= 1200V
V
F(typ)
= 2.6V
I
F(AV)
= 80A
t
rr (typ)
= 25ns
Fast Recovery Time Characteristic
Electrically Isolated Base Plate
Large Creepage Distance Between Terminal
Simplified Mechanical Designs, Rapid Assembly
Features
Description/ Applications
Absolute Maximum Ratings
www.irf.com
Case Styles
HFA80FA120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
V
R
Cathode-to-Anode Voltage
1200
V
I
F
Continuous Forward Current, T
C
= 60C
Per Leg
40
A
I
FSM
Single Pulse Forward Current, T
J
= 25C
Per Leg
400
I
FRM
Maximum Repetitive Forward Current, Rated V
R
,
72
Square wave, 20KHz, T
C
= 60C
P
D
Max Power Dissipation, T
C
= 100C
71
W
Max Power Dissipation, T
C
= 25C
178
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
V
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 55 to 150
C
Parameters
Max
Units
SOT-227
K2
A2
K1
A1
The dual diode series configuration (HFA80FA120) is used for output rectification
or frewheeling/ clamping operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact assemblies to be built.
These modules are intended for general applications such as HV power
supplies, electronic welders, motor control and inverters.
2
HFA80FA120
Bulletin PD-20395 rev. A 01/02
www.irf.com
V
BR
Cathode Anode
1200
-
-
V
I
R
= 100A
Breakdown Voltage
V
FM
Forward Voltage
-
2.6
3.0
V
I
F
= 25A
Fig. 1
-
2.9
3.3
V
I
F
= 40A
-
3.4
-
V
I
F
= 80A, T
J
= 125C
I
RM
Reverse Leakage Current
-
2.0
-
A
V
R
= V
R
Rated
Fig. 2
-
0.5
2
mA
T
J
= 125C, V
R
= 0.8 x V
R
Rated
C
T
Junction Capacitance
-
43
-
pF
V
R
= 200V
Fig. 3
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Thermal - Mechanical Characteristics
Units
t
rr
Reverse Recovery Time
-
25
-
ns
I
F
= 1A, di
F
/dt = 200A/s, V
R
= 30V
-
52
-
T
J
= 25C
-
110
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
5.9
-
A
T
J
= 25C
-
10.8
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
160
-
nC
T
J
= 25C
-
630
-
T
J
= 125C
Dynamic Recovery Characteristics @ T
C
= 25C (unless otherwise specified)
I
F
= 40A
di
F
/dt = - 200A/s
V
R
= 200V
Parameters
Min Typ Max
Test Conditions
Units
R
thJC
Junction to Case, Single Leg Conducting
0.7
C/W
Both Leg Conducting
0.35
K/W
R
thCS
Case to Heat Sink, Flat, Greased Surface
0.05
Wt
Weight
30
g
T
Mounting Torque
1.3
(N*m)
Parameters
Min
Typ
Max
Units
3
HFA80FA120
Bulletin PD-20395 rev. A 01/02
www.irf.com
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
0.0001
0.001
0.01
0.1
1
10
0
200
400
600
800 1000 1200
25C
125C
Tj = 150C
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
.
1
10
100
1
1.5
2
2.5
3
3.5
4
Tj = 150C
Tj = 125C
Tj = 25C
10
100
1000
1
10
100
1000
10000
Tj = 25C
4
HFA80FA120
Bulletin PD-20395 rev. A 01/02
www.irf.com
(3) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Average Power Loss ( Watts )
trr ( ns )
Qrr ( nC )
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (C)
Average Forward Current - I
F(AV)
(A)
Fig. 8 - Typical Stored Charge vs. di
F
/dt
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
di
F
/dt (A/s )
di
F
/dt (A/s )
0
20
40
60
80
100
120
140
160
0
10
20
30
40
50
60
70
DC
Square wave
(D = 0.50)
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20
40
60
80
100
120
140
100
1000
If = 40A, Tj = 125C
If = 20A, Tj = 125C
If = 40A, Tj = 25C
If = 20A, Tj = 25C
0
200
400
600
800
1000
1200
1400
1600
1800
100
1000
If = 40A, Tj = 125C
If = 20A, Tj = 125C
If = 40A, Tj = 25C
If = 20A, Tj = 25C
5
HFA80FA120
Bulletin PD-20395 rev. A 01/02
www.irf.com
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
4. Q
rr
- Area under curve defined by
t
rr
and I
RRM
5. di
(rec) M
/ dt - Peak rate of change
of current during t
b
portion of t
rr
1. di
F
/dt - Rate of change of current through
zero crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from
zero crossing point of negative going I
F
to
point where a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q
rr =
t rr x I
RRM
2
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
SOT-227 Package Details
4.40 (.173 )
4.20 (.165 )
12.50 ( .492 )
7.50 ( .295 )
2.10 ( .082 )
1.90 ( .075 )
30.20 ( 1.189 )
29.80 ( 1.173 )
8.10 ( .319 )
7.70 ( .303 )
4X
15.00 ( .590 )
R FULL
2.10 ( .082 )
1.90 ( .075 )
0.12 ( .005 )
-C-
0.25 ( .010 ) M C A M B M
25.70 ( 1.012 )
25.20 ( .992 )
-B-
6.25 ( .246 )
CHAMFER
2.00 ( .079 ) X 457
-A-
38.30 ( 1.508 )
37.80 ( 1.488 )
12.30 ( .484 )
11.80 ( .464 )
4
1
3
2
LEAD ASSIGMENTS
IGBT
E
C
G
E
S
D
G
S
HEXFET
A1 K2
K1 A2
3
2
4
1
3
2
4
1
HEXFRED
A1 K2
K1 A2
3
2
4
1
HEXFRED
LEAD ASSIGNMENTS
K2 A2
K1 A1
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