ChipFind - документация

Электронный компонент: IR1150STR

Скачать:  PDF   ZIP
Features
PFC with IR proprietary "One Cycle Control"
Continuous conduction mode (CCM) boost type PFC
No line voltage sense required
Programmable switching frequency (50kHz-200kHz)
Programmable output overvoltage protection
Brownout and output undervoltage protection
Cycle-by-cycle peak current limit
Soft start
User initiated micropower "Sleep Mode"


PFC ONE CYCLE CONTROL PFC IC
IR1150S(PbF)
IR1150IS(PbF)
www.irf.com
1
IR1150 Application Diagram
Data Sheet No. PD60230 revAa
Description
The
PFC IR1150 is a power factor correction (PFC) control IC designed to operate in continuous
conduction mode (CCM) over a wide range input line voltages. The IR1150 is based on IR's
proprietary "One Cycle Control" (OCC) technique providing a cost effective solution for PFC.
The proprietary control method allows major reductions in component count, PCB area and
design time while delivering the same high system performance as traditional solutions.
The IC is fully protected and eliminates the often noise sensitive line voltage sensing requirements
of existing solutions.
The IR1150 features include programmable switching frequency, programmable dedicated
over voltage protection, soft start, cycle-by-cycle peak current limit, brownout, open loop,
UVLO and micropower startup current.
In addition, for low standby power requirements (Energy Star, 1W Standby, Blue Angel, etc.), the IC can be driven into sleep
mode with total current consumption below 200A, by pulling the OVP pin below 0.62V.
Package
8-Lead SOIC
Open loop protection
Maximum duty cycle limit of 98%
User programmable fixed frequency operation
Min. off time of 150-350ns over freq range
V
CC
under voltage lockout
Internally clamped 13V gate drive
Fast 1.5A peak gate drive
Micropower startup (<200
A)
Latch immunity and ESD protection
Parts also available Lead-Free
ISNS
3
COMP
5
VFB
6
OVP
4
FREQ
2
VCC
7
GATE
8
COM
1
IR1150
-+
BRIDGE
V OUT
RTN
+
AC NEUTRAL
AC LINE
V c c
+
IR1150S/IR1150IS(PbF)
www.irf.com
2
Parameters Symbols Min. Typ.
Max. Units
Remarks
Supply voltage
V
CC
15
18
20
V
Junction temperature
T
J
-25
-- 125
C
Ambient temperature
T
A
0
--
70
C
IR1150S
Ambient temperature
T
A
-25
--
85
C
IR1150IS
Switching frequency
F
SW
50
-- 200
kHz
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltages are
absolute voltages referenced to COM. Thermal resistance and power dissipation are measured under board mounted and
still air conditions.
Parameters Symbols Min. Max. Units Remarks
V
CC
voltage
V
CC
-0.3
22
V
Not internally clamped
Freq. voltage V
FREQ.
-0.3 10.5
V
I
SNS
voltage V
ISNS
-10
3
V
V
FB
voltage
V
FB
-0.3 10.5
V
COMP voltage V
COMP
-0.3
10
V
Gate voltage V
GATE
-0.3
18
V
Continuous gate current I
GATE
-5
5
mA
Max peak gate current I
GATEPK
-1.5
1.5
A
Junction temperature
T
J
-40 150
o
C
Storage temperature
T
S
-55 150
o
C
Thermal resistance
R
JA
-- 128 C/W
SOIC-8
Package power dissipation
P
D
-- 675 mW
SOIC-8 T
AMB
= 25
o
C
ESD protection V
ESD
--
2
kV
Human body model*
Recommended Operating Conditions
Recommended operating conditions for reliable operation with margin
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction
temperature range T
J
from 25 C to 125C. Typical values represent the median values, which are related to 25C. If not
otherwise stated, a supply voltage of V
CC
=15V is assumed for test condition
Parameters Symbols Min. Typ.
Max. Units
Remarks
V
CC
turn-on threshold
V
CC ON
12.2
12.7
13.2
V
V
CC
turn-off threshold
V
CC UVLO
10.2
10.7
11.2
V
(under voltage lock out)
V
CC
turn-off hysteresis
V
CC HYST
1.8
--
2.2
V
Supply Section
*Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5K
series resistor)
www.irf.com
3
IR1150S/IR1150IS(PbF)
Electrical Characteristics cont.
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction
temperature range T
J
from 25 C to 125C. Typical values represent the median values, which are related to 25C. If not
otherwise stated, a supply voltage of V
CC
=15V is assumed for test condition.
Oscillator Section
Parameters Symbols Min. Typ.
Max. Units
Remarks
Switching frequency
f
SW
50
--
200
kHz
R
SET
= 165k
-37k
approx.
Initial accuracy f
SW ACC
--
--
5
%
T
A
= 25
o
C
Voltage stability
V
STAB
--
0.2
3
%
13V <V
CC
<20V
Temperature stability T
STAB
--
2
--
%
-25
o
C
TJ
125
o
C
Total variation
f
VT
--
10
--
%
Line & temperature
Long term stability F
STABLT
--
0.1 0.5
%
T
AMB
= 125
o
C, 1000Hrs
Maximum duty cycle
D
MAX
93
--
98
%
f
SW
=200kHz
Minimum duty cycle
D
MIN
--
--
0
%
Minimum off time Toffmin
200
300 400
ns
f
SW
=50kHz to 200kHz
Protection Section
Parameters Symbols Min. Typ.
Max. Units
Remarks
Open loop protection (OLP)
Vfb threshold
V
OLP
17
19
21 %V
REF
Output under voltage
protection (OUV)
V
OUV
49
51
53 %V
REF
Brown out protection
Output over voltage
protection (OVP)
V
OVP
104
105.5
107 %V
REF
OVP hysteresis
--
350
450
550
mV
Peak current limit protection
(I
PKLMT
) I
SNS
voltage threshold V
ISNS
-1.11
-1.04 -0.96
V
Parameters Symbols Min. Typ.
Max. Units
Remarks
Operating current
I
CC
--
18
22
mA
C
LOAD
=1nF f
SW
=200kHZ
--
36
40
mA
C
LOAD
=10nF f
SW
=200kHZ
--
8
10
mA
Standby mode - inactive gate
Internal oscillator running
Startup current
I
CCSTART
--
--
175
uA
V
CC
=V
CC ON
-0.1V
Sleep current
I
SLEEP
--
125
200
uA
V
OVP
<0.5V (typ),V
CC
=15V
Sleep mode threshold
V
SLEEP
0.565 0.615 0.665
V
V
CC
=15V
IR1150S/IR1150IS(PbF)
www.irf.com
4
Voltage Error Amplifier Section
Parameters Symbols Min. Typ.
Max. Units
Remarks
Transconductance
g
m
30
40
55
S
-25
o
C
T
AMB
125
o
C
Source/sink current
30
40
65
A
T
AMB
= 25
o
C
I
OVEA
20
45
90
A
-25
o
C
T
AMB
125
o
C
Soft start delay time
t
ss
-- 40
-- ms
R
GAIN
=1k
, C
ZERO
=0.33
F
(calculated)
C
POLE
=0.01
F, f
XO
=28Hz
V
COMP
voltage (fault) V
COMP FLT
--
1.2
1.5
V
@ 1mA (max) initial
0.2
V
@ 25
A steady state
Effective V
COMP
voltage V
COMP EFF
6.05
V
Input bias current
I
IB
--
-0.2
-0.5
A
V
FB
=0V, -25
o
C
T
AMB
125
o
C
Open loop bandwidth
BW
--
1
--
MHz
Input offset voltage temp
coefficient
TC
IOV
--
--
10
V/
o
C
Common mode rejection ratio
CMRR
--
100
--
dB
Output low voltage
V
OL
--
--
0.5
V
Output high voltage
V
OH
5.71
6.15
6.8
V
V
COMP
start voltage V
COMP START
300 500 700 mV
Internal Voltage Reference Section
Parameters Symbols Min. Typ.
Max. Units
Remarks
Reference voltage
V
REF
6.9
7.0
7.1
V
T
A
= 25
o
C
Line regulation R
REG
--
12
25
mV
13.5V <V
CC
< 20V
Temp stability
T
STAB
-- 0.4
--
%
-25
o
C
T
AMB
125
o
C
Total variation
V
TOT
6.8
--
7.1
V
Over V
CC
and T
j
ranges
Current Amplifier Section
Parameters Symbols Min. Typ.
Max. Units
Remarks
DC gain
g
DC
--
2.5
--
V/V
Corner frequency f
C
200
--
280
kHz
Input offset voltage
V
IO
-- 1
4
mV
I
SNS
bias current
IB
--
200
300
A
V
FB
=0V,-25
o
C
T
AMB
125
o
C
Input offset voltage temp
coefficient
TC
IOV
--
--
10
V/
o
C
Common mode rejection ratio
CMRR
--
100
--
dB
Blanking time T
BLANK
230
350
450
ns T
AMB
= 25
o
C
150
600
ns
-25
o
C
T
AMB
125
o
C
www.irf.com
5
IR1150S/IR1150IS(PbF)
Gate Driver Section
Parameters Symbols Min. Typ.
Max. Units
Remarks
Gate low voltage
V
GLO
--
1.2
1.5
V
I
GATE
=200mA
Gate high voltage V
GTH
--
13
18
V
V
CC
=20V
Gate high voltage
V
GTH
9.5 --
--
V
V
CC
=11.5V
Rise time
--
20
--
ns
C
LOAD
= 1nF, V
CC
=16V
--
70
--
ns
C
LOAD
= 10nF, V
CC
=16V
Fall time
--
20
--
ns
C
LOAD
= 1nF, V
CC
=16V
--
70
-- ns
C
LOAD
= 10nF, V
CC
=16V
Out peak current
I
OPK
1.5
--
--
A
C
LOAD
= 10nF, V
CC
=16V
Gate voltage @ fault V
G fault
--
--
1.8
V
I
GATE
=20mA
t
r
t
f