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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

3.5

ID @ VGS = 10V, TC = 100°C

Continuous Drain Current

2.25

IDM

Pulsed Drain Current

1 4

PD @ TC = 25°C

Max. Power Dissipation

1 5

Linear Derating Factor

0.09

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

7.0

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

9.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Pckg. Mounting Surface Temp.

300 (for 5 S)

Weight

0.42(typical)

PD - 91699B

The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board den-
sity. International Rectifier has engineered the LCC pack-
age to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.

1/17/01

www.irf.com

LCC-18

Product Summary

Part Number B

VDSS

DS(on)

IRFE110 100V 0.60

3.5A

Features:

Surface Mount

Small Footprint

Alternative to TO-39 Package

Hermetically Sealed

Dynamic dv/dt Rating

Avalanche Energy Rating

Simple Drive Requirements

Light Weight

For footnotes refer to the last page

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6782U

HEXFET

TRANSISTORS

JANTXV2N6782U

SURFACE MOUNT (LCC-18)

[REF:MIL-PRF-19500/556]

IRFE110

100V, N-CHANNEL

IRFE110

www.irf.com

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction to Case

8.3

RthJ-PCB

Junction to PC Board

-- 27" " " Soldered to a copper clad PC board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

3.5

ISM

Pulse Source Current (Body Diode)

1 4

VSD

Diode Forward Voltage

1.5

= 25°C, IS =3.5A, VGS = 0V

trr

Reverse Recovery Time

180

Tj = 25°C, IF = 3.5A, di/dt

100A/

QRR

Reverse Recovery Charge

2.0

µc

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

For footnotes refer to the last page

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.12

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.60 VGS = 10V, ID =2.25A

Resistance

-- 0.69

VGS =10V, ID =3.5A

VGS(th)

Gate Threshold Voltage

2.0

-- 4.0 V VDS = VGS, ID =250µA

gfs

Forward Transconductance

0.8

S (

)

VDS > 15V, IDS =2.25A

IDSS

Zero Gate Voltage Drain Current

2 5

VDS=80V, VGS=0V

250

VDS =80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS =20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS =-20V

Total Gate Charge

6.6

VGS =10V, ID= 3.5A

Qgs

Gate-to-Source Charge

1.7

VDS =50V

Qgd

Gate-to-Drain (`Miller') Charge

3.5

(on)

Turn-On Delay Time

1 5

VDD =50V, ID =3.5A,

t r

Rise Time

2 5

RG =7.5

(off)

Turn-Off Delay Time

2 5

Fall Time

2 0

LS + LD

Total Inductance

6.1

Ciss

Input Capacitance

190

VGS = 0V, VDS =25V

Coss

Output Capacitance

8 6

f = 1.0MHz

Crss

Reverse Transfer Capacitance

1 3

n s

Measured from the center of
drain pad to center of source
p a d

www.irf.com

IRFE110

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

3.1A

0.1

100

0.1

100

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

0.1

100

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 150 C

T = 25 C

IRFE110

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.0

0.5

1.0

1.5

2.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

T = 25 C

0.1

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

3.5 A

= 20V

= 50V

= 80V

100

200

300

400

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

C
C
C

=
=
=

0V,

C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

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IRFE110

Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

10V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

125

150

0.0

1.0

2.0

3.0

4.0

T , Case Temperature ( C)

,
D

i
n
C

urren

t (A)

0.01

0.1

100

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t
2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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