Product Summary

Part Number

DSS

DS(on)

IRHN7450

500V

0.45

11A

IRHN8450

500V

0.45

11A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

IRHN7450, IRHN8450

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

7.0

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

3.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

2.6 (typical)

PD - 90819A

Pre-Irradiation

500Volt, 0.45

, MEGA RAD HARD HEXFET

International Rectifier's RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10

Rads(Si). Under

identical pre- and post-irradiation test conditions, In-
ternational Rectifier's RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 10

Rads

(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10

Rads

(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier's patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.

RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.

REPETITIVE AVALANCHE AND dv/dt RATED

JANSR2N7270U

HEXFET

TRANSISTOR

JANSH2N7270U

www.irf.com

02/01/99

N CHANNEL

MEGA RAD HARD

IRHN7450

IRHN8450

IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

500

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.6

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.45

VGS = 12V, ID = 7.0A

Resistance

-- 0.50

VGS = 12V, ID = 11A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

4.0

S (

)

VDS > 15V, IDS = 7.0A

IDSS

Zero Gate Voltage Drain Current

VDS= 0.8 x Max Rating,VGS=0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

150

VGS =12V, ID = 11A

Qgs

Gate-to-Source Charge

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 250V, ID = 11A,

Rise Time

190

RG = 2.35

(off)

Turn-Off Delay Time

190

Fall Time

130

Internal Drain Inductance

2.0

Internal Source Inductance

4.1

Ciss

Input Capacitance

4000

VGS = 0V, VDS = 25V

Coss

Output Capacitance

330

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Pre-Irradiation

Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.

Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.

Modified MOSFET sym-
bol showing the internal
inductances.

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.6

= 25°C, IS =11A, VGS = 0V

trr

Reverse Recovery Time

1100

Tj = 25°C, IF = 11A, di/dt

100A/

QRR Reverse Recovery Charge

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.83

RthJ-PCB

Junction-to-PC board

6.6

-- Soldered to a 1 inch square clad PC board

°C/W

IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices

www.irf.com

Radiation Performance of Rad Hard HEXFETs

Table 1. Low Dose Rate

IRHN7450

IRHN8450

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

Min

Max

Min

Max

DSS

Drain-to-Source Breakdown Voltage

500

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.0

1.25

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20 V

DSS

Zero Gate Voltage Drain Current

µA

=0.8 x Max Rating, V

=0V

DS(on)1

Static Drain-to-Source

0.45

0.6

= 12V, I

= 7.0A

On-State Resistance One

Diode Forward Voltage

1.6

TC = 25°C, IS =11A,V

= 0V

International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a V

bias condition equal to 80% of the

device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10

Rads

(Si) are identical and are presented in Table 1, col-
umn 1, IRHN7450. Post-irradiation limits of the de-
vices irradiated to 1 x 10

Rads (Si) are presented in

Table 1, column 2, IRHN8450. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide a
direct comparison.

High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10

Rads

(Si)/Sec (See Table 2).

International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.

Table 2. High Dose Rate

Rads (Si)/sec 10

Rads (Si)/sec

Parameter

Min Typ Max

Units

Test Conditions

DSS

Drain-to-Source Voltage

400

Applied drain-to-source voltage during

gamma-dot

IPP

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

133

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence Range V

Bias V

Bias

Ion (MeV/mg/cm

) (ions/cm

) (µm) (V) (V)

Ni 28

3x 10

~41 275 -5

Radiation
Characteristics

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