irhm70541

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

35*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

200

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

3.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Lead Temperature

300 ( 0.063 in.(1.6mm) from case for 10s)

Weight

9.3 (Typical )

Pre-Irradiation

International Rectifiers RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

RADIATION HARDENED

POWER MOSFET

THRU-HOLE

THRU-HOLE (T0-254AA)

(T0-254AA)

8/9/01

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Product Summary

Part Number

Part Number Radiation Level

Radiation Level

Radiation Level R

DS(on)

QPL Part Number

IRHM7054 100K Rads (Si)

0.027

35*A JANSR2N7394

IRHM3054 300K Rads (Si)

0.027

35*A JANSF2N7394

IRHM4054 600K Rads (Si)

0.027

35*A JANSG2N7394

IRHM8054 1000K Rads (Si) 0.027

35*A JANSH2N7394

For footnotes refer to the last page
*Current is limited by pin diameter

IRHM7054

JANSR2N7394

60V, N-CHANNEL

REF: MIL-PRF-19500/663

RAD Hard

HEXFET

TECHNOLOGY

TO-254AA

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

PD - 90887D

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IRHM7054

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

Continuous Source Current (Body Diode)

35*

ISM

Pulse Source Current (Body Diode)

220

VSD Diode Forward Voltage

1.4

= 25°C, IS = 35A, VGS = 0V

trr

Reverse Recovery Time

280

Tj = 25°C, IF = 35A, di/dt

100A/

QRR Reverse Recovery Charge

2.2

µC

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

RthJC

Junction-to-Case

0.83

RthJA

Junction-to-Ambient

°C/W

Typical socket mount

RthCS

Case-to-Sink

0.21

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Typ Max

Max

Max Units

Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.053

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.027

VGS = 12V, ID = 30A

Resistance

0.030

VGS = 12V, ID = 35A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 30A

IDSS

Zero Gate Voltage Drain Current

VDS= 48V ,VGS=0V

250

VDS = 48V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

200

VGS =12V, ID = 35A

Qgs

Gate-to-Source Charge

VDS = 30V

Qgd

Gate-to-Drain (Miller) Charge

(on)

Turn-On Delay Time

VDD =30V, ID = 35A

Rise Time

100

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.8

Measured from Drain lead (6mm /0.25in from

package) to Source lead (6mm /0.25in.

from

Package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

4100

VGS = 0V, VDS = 25V

Coss

Output Capacitance

2000

f = 1.0MHz

Crss

Reverse Transfer Capacitance

560

* Current is limited by pin diameter

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Pre-Irradiation

IRHM7054

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300 - 1000K Rads (Si)

Units

nits

Test Conditions

Min

Min Max

Max

Max Min Max

Min Max

DSS

Drain-to-Source Breakdown Voltage 60 60 V V

= 0V, I

= 1.0mA

/5JD

Gate Threshold Voltage

2.0 4.0 1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-100 -100

= -20 V

DSS

Zero Gate Voltage Drain Current

25 50 µA V

=48V, V

=0V

DS(on)

Static Drain-to-Source"

0.027 0.04

= 12V, I

=30A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source"

0.027 0.04

= 12V, I

=30A

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHM7054 (JANSR2N7394)
2. Part number IRHM3054, IRHM4054 and IRHM8054 ( JANSF2N7394, JANSG2N7394, JANSH2N7394)

Fig a.

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage"

1.4 1.4 V V

= 0V, IS = 35A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

DS(V)

MeV/(mg/cm

)) (MeV) (µm)

V
V

=0V@

=-5V@

=-10V@

V
V

=-15V @

V
V

=-20V

59.9

345 32.8 60 60 45 40 30

36.8

305 39 40 35 30 25 20

-5

-10

-15

-20

VGS

VDS

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IRHM7054

Pre-Irradiation

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

100

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

100

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

V = 25V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

50A

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Pre-Irradiation

IRHM7054

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

C
C
C

=
=
=

0V,

C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

120

160

200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

35A

= 30V

= 48V

100

1000

0.4

1.0

1.6

2.2

2.8

3.4

4.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

,
D

i
n
C

urren

t (A)

,
D

i
n
C

urren

t (A)

100us

1ms

10ms

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