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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

32.5

IDM

Pulsed Drain Current

204

PD @ TC = 25°C

Max. Power Dissipation

300

Linear Derating Factor

2.4

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

7.3

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 ( for 5s)

Weight

3.3 (Typical)

PD - 91396C

Pre-Irradiation

International Rectifier's RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)

5/4/2000

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Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNA7160 100K Rads (Si)

0.04

51A

JANSR2N7432U

IRHNA3160 300K Rads (Si)

0.04

51A

JANSF2N7432U

IRHNA4160 600K Rads (Si)

0.04

51A

JANSG2N7432U

IRHNA8160 1000K Rads (Si)

0.04

51A

JANSH2N7432U

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

For footnotes refer to the last page

IRHNA7160

100V, N-CHANNEL

REF: MIL-PRF-19500/664

RAD-Hard

HEXFET

MOSFET TECHNOLOGY

SMD - 2

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IRHNA7160

Pre-Irradiation

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS =0 V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.11

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

0.040

VGS = 12V, ID = 32.5A

On-State Resistance

0.045

VGS = 12V, ID = 51A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 32.5A

IDSS

Zero Gate Voltage Drain Current

VDS= 80V,VGS=0V

250

VDS = 80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

310

VGS = 12V, ID = 51A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

110

(on)

Turn-On Delay Time

VDD = 50V, ID = 51A,

Rise Time

150

RG = 2.35

(off)

Turn-Off Delay Time

150

Fall Time

200

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

5300

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1600

f = 1.0MHz

Crss

Reverse Transfer Capacitance

350

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.42

RthJPCB

Junction-to-PC Board

1.6

Solder to a 1" sq. copper clad PC Board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

204

VSD

Diode Forward Voltage

1.8

= 25°C, IS = 51A, VGS = 0V

trr

Reverse Recovery Time

520

Tj = 25°C, IF = 51A, di/dt

100A/

QRR Reverse Recovery Charge

6.5

µC

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Measured from center of drain
pad to center of source pad

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Pre-Irradiation

IRHNA7160

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

600 to 1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 100 -- 100 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 25 -- 50 µA

=80V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.045 -- 0.062

= 12V, I

=32.5A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.04 -- 0.057

= 12V, I

=32.5A

On-State Resistance (SMD-2)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.8 -- 1.8 V

= 0V, IS = 51A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Ion

LET

Energy Range

DS(V)

MeV/(mg/cm

)) (MeV) (µm) @

=0V @

=-5V @

=-10V @

=-15V @

=-20V

285 43 100 100 100 80 60

36.8

305 39 100 90 70 50 --

100

120

-5

-10

-15

-20

-25

VGS

VDS

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IRHNA7160

Pre-Irradiation

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

51A

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Pre-Irradiation

IRHNA7160

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

120

160

200

240

280

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

51A

= 20V

= 50V

= 80V

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

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