Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25C
Continuous Drain Current
-0.75
ID @ VGS = -10V, TC = 100C Continuous Drain Current
-0.5
IDM
Pulsed Drain Current
-3.0
PD @ TC = 25C
Max. Power Dissipation
1.4
W
Linear Derating Factor
0.011
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
75
mJ
IAR
Avalanche Current
--
A
EAR
Repetitive Avalanche Energy
--
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.5
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
1.3 (typical)
g
PD - 90397G
o
C
A
04/16/02
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1
MO-036AB
Product Summary
Part Number R
DS(on)
I
D
IRFG9110 1.4
-0.75A
For footnotes refer to the last page
HEXFET
MOSFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor's totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Dynamic dv/dt Rating
n
Light-weight
POWER MOSFET
THRU-HOLE (MO-036AB)
IRFG9110
JANTX2N7335
JANTXV2N7335
REF:MIL-PRF-19500/599
100V, QUAD P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
IRFG9110
2
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Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
17
RthJA
Junction to Ambient
--
--
90
Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-0.75
ISM
Pulse Source Current (Body Diode)
--
--
-3.0
VSD
Diode Forward Voltage
--
--
-5.5
V
T
j
= 25C, IS = -0.75A, VGS = 0V
trr
Reverse Recovery Time
--
--
200
nS
Tj = 25C, IF = -0.75A, di/dt
-100A/
s
QRR Reverse Recovery Charge
--
--
9.0
c
VDD
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
--
--
V
VGS = 0V, ID = -1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
-0.098
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
1.4
VGS = -10V, ID = -0.5A
Resistance
--
-- 1.73
VGS = -10V, ID = -0.75A
VGS(th)
Gate Threshold Voltage
-2.0
-- -4.0 V VDS = VGS, ID = -250A
gfs
Forward Transconductance
0.67
--
--
S (
)
VDS > -15V, IDS = -0.5A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS= -80V, VGS= 0V
--
--
-250
VDS = -80V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS =20V
Qg
Total Gate Charge
--
--
15
VGS = -10V, ID= -0.75A
Qgs
Gate-to-Source Charge
--
--
7.0
nC
VDS = -50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
8.0
td
(on)
Turn-On Delay Time
--
--
30
VDD = -50V, ID = -0.75A
tr
Rise Time
--
--
60
VGS = -10V, RG =7.5
td
(off)
Turn-Off Delay Time
--
--
40
tf
Fall Time
--
--
40
LS + LD
Total Inductance
--
10
--
Ciss
Input Capacitance
--
200
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
85
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
30
--
nA
nH
ns
A
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Note: Corresponding Spice and Saber models are available on the G&S Website.
www.irf.com
3
IRFG9110
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFG9110
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
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5
IRFG9110
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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