Absolute Maximum Ratings (Per Die)

Parameter

N-Channel

P-Channel

Units

ID @ VGS =± 10V, TC = 25°C Continuous Drain Current

1.0

-0.75

ID @ VGS =± 10V, TC = 100°C Continuous Drain Current

0.6

-0.5

IDM

Pulsed Drain Current

4.0

-3.0

PD @ TC = 25°C

Max. Power Dissipation

1.4

Linear Derating Factor

0.011

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.5

-5.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.63 in./1.6 mm from case for 10s)

Weight

1.3 (Typical)

04/16/02

www.irf.com

Product Summary

Part Number R

DS(on)

CHANNEL

IRFG6110 0.7

1.0A N

IRFG6110 1.4

-0.75A P

For footnotes refer to the last page

MO-036AB

PD - 90436F

IRFG6110

JANTX2N7336

JANTXV2N7336

REF:MIL-PRF-19500/598

100V, Combination 2N-2P-CHANNEL

HEXFET

MOSFET TECHNOLOGY

POWER MOSFET
THRU-HOLE (MO-036AB)

HEXFET

MOSFET technology is the key to International

Rectifier's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.

HEXFET

tran-

sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The

HEXFET

transistor's totally isolated package eliminates the

need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

IRFG6110

www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

1.0

ISM

Pulse Source Current (Body Diode)

4.0

VSD

Diode Forward Voltage

1.5

= 25°C, IS = 1.0A, VGS = 0V

trr

Reverse Recovery Time

200

Tj = 25°C, IF = 1.0A, di/dt

100A/

QRR Reverse Recovery Charge

0.83

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

For Each N-Channel Device

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

-- V

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.13

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.7

VGS = 10V, ID = 0.6A

Resistance

0.8

VGS = 10V, ID = 1.0A

VGS(th)

Gate Threshold Voltage

2.0

-- 4.0 V

VDS = VGS, ID = 250

gfs

Forward Transconductance

0.86

-- S (

)

VDS > 15V, IDS = 0.6A

IDSS

Zero Gate Voltage Drain Current

VDS= 80V, VGS= 0V

250

VDS = 80V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =10V, ID = 1.0A,

Qgs

Gate-to-Source Charge

7.5

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

7.5

(on)

Turn-On Delay Time

VDD = 50V, ID = 1.0A,

Rise Time

VGS =10V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

Ciss

Input Capacitance

180

VGS = 0V, VDS = 25V

Coss

Output Capacitance

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Thermal Resistance (Per Die)

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

RthJA

Junction-to-Ambient

Typical socket mount

°C/W

Note: Corresponding Spice and Saber models are available on the G&S Website.

Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)

www.irf.com

IRFG6110

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

-0.75

ISM

Pulse Source Current (Body Diode)

-3.0

VSD

Diode Forward Voltage

-5.5

= 25°C, IS = -0.75A, VGS = 0V

trr

Reverse Recovery Time

200

Tj = 25°C, IF = -0.75A, di/dt

-100A/

QRR Reverse Recovery Charge

9.0

VDD

-50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance (Per Die)

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

RthJA

Junction-to-Ambient

Typical socket mount

°C/W

Electrical Characteristics

For Each P-Channel Device

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

VGS = 0V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.098

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

1.4

VGS = -10V, ID = -0.5A

Resistance

1.73

VGS = -10V, ID =- 0.75A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -250

gfs

Forward Transconductance

0.67

S (

)

VDS > -15V, IDS = -0.5A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -80V, VGS= 0V

-250

VDS = -80V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = - 20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

VGS = -10V, ID = -0.75A,

Qgs

Gate-to-Source Charge

7.0

VDS = -50V

Qgd

Gate-to-Drain (`Miller') Charge

8.0

(on)

Turn-On Delay Time

VDD = -50V, ID = -0.75A,

Rise Time

VGS = -10V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

Ciss

Input Capacitance

200

VGS = 0V, VDS = -25V

Coss

Output Capacitance

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)

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