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Электронный компонент: OM5N100SA

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3.1 - 15
3.1
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
4 11 R1
Supersedes 2 05 R0
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
OM1N100ST
OM3N100ST
OM5N100SA
OM6N100SA
OM1N100SA
OM3N100SA
PART NUMBER
R
DS(on)
I
D
OM1N100SA
8.0
1.0A
OM3N100SA
5.2
3.5A
OM5N100SA
3.0
5.0A
OM6N100SA
2.0
6.0A
OM3N100ST
5.4
3.5A
OM1N100ST
8.2
1.0A
SCHEMATIC
DRAIN
GATE
SOURCE
PIN CONNECTION
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1 2 3
1
2 3
TO-254AA
TO-257AA
3.1 - 16
3.1
OM1N100SA/ST Series
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
STATIC P/N OM1N100SA
(See Note 3)
STATIC P/N OM3N100SA
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
1000
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V, V
DS
= 0
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS
= - 20 V, V
DS
= 0
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
I
DSS
Zero Gate Voltage
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Drain Current
1.0
mA
V
DS
= 0.8 x Max. Rat.,
Current
1.0
mA
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125 C
V
GS
= 0, T
C
= 125 C
I
D(on)
On-State Drain Current
1.0
A
V
DS
> I
D(on)
x R
DS(on)
Max.
I
D(on)
On-State Drain Current
3.5
A
V
DS
> I
D(on)
x R
DS(on)
Max
V
GS
= 10 V
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
SA
8.0
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
SA
5.2
V
GS
= 10 V
Resisitance
1, 3
ST
8.2
I
D
=.5A
Resistance
1, 3
ST
5.4
I
D
=.5A
R
DS(on)
Static Drain-Source On-State
SA
15.0
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
SA
10.0
V
GS
= 10 V
Resistance
1, 3
ST
15.4
I
D
=.5A, T
C
= 100 C
Resistance
1, 3
ST
10.4
I
D
=.5A, T
C
= 100 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1.0
S
V
DS
= 10V, I
D
= 1 A
g
fs
Forward Transductance
1.0
S
V
DS
= 10, I
D
= 1.5 A
C
iss
Input Capacitance
950
pF
V
GS
= 0
C
iss
Input Capacitance
950
pF
V
GS
= 0
C
oss
Output Capacitance
110
pF
V
DS
= 25 V
C
oss
Output Capacitance
110
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
90
ns
T
d(on)
Turn-On Delay Time
90
ns
t
r
Rise Time
90
ns
t
r
Rise Time
90
ns
T
d(off)
Turn-Off Delay Time
115
ns
T
d(off)
Turn-Off Delay Time
115
ns
t
f
Fall Time
75
ns
t
f
Fall Time
75
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
3.5
A
Modified MOSPOWER
I
S
Continuous Source Current
3.5
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
14
A
the integral P-N
I
SM
Source Current
1
14
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
2
2.5
V
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
V
SD
Diode Forward Voltage
2
2.5
V
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
t
rr
Reverse Recovery Time
900
ns
I
F
= I
S
, V
DD
= 100 V
t
rr
Reverse Recovery Time
900
ns
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/
m
s, T
J
= 150 C
dl
F
/ds = 100 A/
m
s, T
J
= 150 C
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
1.5%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
1.5%.
2 Pulse Width limited by safe operating area.
2 Pulse Width limited by safe operating area.
3 OM1N100ST - All characteristics the same except R
DS(on)
3 OM3N100ST - All characteristics the same except R
DS(on)
V
DD
= 600 V,
I
D
= 3.5
RG = 50
W,
VGS
=
10 V
VDD = 600 V, ID = 3.5
RG = 50
W,
VGS = 10 V
G
D
S
G
D
S
3.1 - 17
OM1N100SA/ST Series
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
STATIC P/N OM5N100SA
(See Note 3)
STATIC P/N OM6N100SA
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
1000
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V, V
DS
= 0
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V, V
DS
= 0
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS
= - 20 V, V
DS
= 0
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V, V
DS
= 0
I
DSS
Zero Gate Voltage
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Drain Current
1.0
mA
V
DS
= 0.8 x Max. Rat.,
Current
1.0
mA
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125 C
V
GS
= 0, T
C
= 125 C
I
D(on)
On-State Drain Current
5.0
A
V
DS
> I
D(on)
x R
DS(on)
Max.,
I
D(on)
On-State Drain Current
6.0
A
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
3.0
V
GS
= 10 V, I
D
= 2.5 A
R
DS(on)
Static Drain-Source On-State
2.0
V
GS
= 10 V, I
D
= 3.0 A
Resisitance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
6.0
V
GS
= 10 V, I
D
= 2.5 A
R
DS(on)
Static Drain-Source On-State
4.0
V
GS
= 10 V, I
D
= 3.0 A
Resistance
1
T
C
= 100 C
Resistance
1
T
C
= 100 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
4.0
S
V
DS
= 25 V
DS(on)
, I
D
= 2.5 A
g
fs
Forward Transductance
4.0
S
V
DS
= 25V, I
D
= 3.0 A
C
iss
Input Capacitance
2600
pF
V
GS
= 0
C
iss
Input Capacitance
2600
pF
V
GS
= 0
C
oss
Output Capacitance
350
pF
V
DS
= 25 V
C
oss
Output Capacitance
350
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
150
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
150
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
65
ns
T
d(on)
Turn-On Delay Time
65
ns
t
r
Rise Time
55
ns
t
r
Rise Time
55
ns
T
r(
V
off)
Off-Voltage Rise Time
62
ns
T
r
(V
off
) Off-Voltage Rise Time
62
ns
t
f
Fall Time
25
ns
t
f
Fall Time
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
6
A
Modified MOSPOWER
I
S
Continuous Source Current
6
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
2
24
A
the integral P-N
I
SM
Source Current
2
24
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
2.5
V
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
2.5
V
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
t
rr
Reverse Recovery Time
1100
ns
I
F
= I
S
,V
DD
= 100 V
t
rr
Reverse Recovery Time
1000
ns
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s, T
J
= 150 C
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
1.5%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
1.5%.
2 Pulse Width limited by safe operating area.
2 Pulse Width limited by safe operating area.
3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
V
DD
= 800 V,
I
D
= 6A
RG = 7
W,
VGS
=
10 V
V
DD
= 800 V,
I
D
=6A
RG = 7
W,
VGS
=
10 V
G
D
S
G
D
S
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Symbol
Parameter
OM1N100SA OM3N100SA OM5N100SA OM6N100SA
Units
OM1N100ST
OM3N100ST
I
AR
Avalanche Current
(Repetitive or Non-Repetitive)
T
j
= 25C
3.5
3.5
6
6
A
T
j
= 100C
2
2
3.4
3.4
A
E
AS
Single Pulse Avalanche Energy
130
130
850
850
mJ
Starting T
j
= 25C, I
D
= I
AR
,
V
DD
= 25V
E
AR
Repetitive Avalanche Energy
6
6
16
16
mJ
(Pulse width limited by T
J
max,
d
< 1%)
V
DS
Drain-Source Voltage
1000
1000
1000
1000
V
V
DGR
Drain-Source Voltage (R
GS
= 20k )
1000
1000
1000
1000
V
I
D
@ T
C
= 25C
Continuous Drain Current
.50
3.5
5.0
6.0
A
I
D
@ T
C
= 100C
Continuous Drain Current
.30
2.0
3.1
3.7
A
I
DM
Pulsed Drain Current
1
14
14
24
24
A
V
GS
Gate-Source Voltage
20
20
20
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
90
90
130
130
W
P
D
@ T
C
=100C
Maximum Power Dissipation
32
32
51
51
W
Junction-To-Case
Linear Derating Factor
.87
.87
2.10
2.10
W/C
Junction-To-Ambient Linear Derating Factor
.020
.020
.020
.020
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
Lead Temperature
(1/16" from case for 10secs.)
300
300
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
THERMAL RESISTANCE
R
thJC
Junction-To-Case Max.
1.15
1.15
.48
.48
C/W
MECHANICAL OUTLINE
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
TO-257AA
TO-254AA
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
D S G
FET 1
D
S
G
FET 3
D
S
G
FET 3
D
S
G
FET 4
D
S
G
FET 2
G
S
D
FET 1
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
OM1N100SA/ST Series