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Электронный компонент: OM6025SC

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3.1 - 97
3.1
400V Thru 1000V, Up To 26 Amp N-Channel,
Size 6 MOSFETs, High Energy Capability
4 11 R2
Supersedes 1 07 R1
POWER MOSFETS IN HERMETIC
ISOLATED JEDEC TO-258AA SIZE 6 DIE
FEATURES
Isolated Hermetic Metal Package
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
V
DS
R
DS(ON)
I
D
(Amp)
OM6025SC/OM6032SC
400
.20
24
OM6026SC/OM6031SC
500
.27
22
OM6027SC/OM6028SC
1000
1.30
10
SCHEMATIC
OM6027SC
OM6028SC
OM6031SC
OM6032SC
OM6025SC
OM6026SC
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OM6025SC OM6026SC OM6027SC
Units
OM6032SC OM6031SC OM6028SC
V
DS
Drain-Source Voltage
400
500
1000
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
400
500
1000
V
I
D
@ T
C
= 25C
Continuous Drain Current
24
22
10
A
I
DM
Pulsed Drain Current
92
85
40
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
165
165
165
W
Derate Above 25C Ambient
.025
.025
.025
W/C
W
DSS
(1)
Single Pulse Energy
Drain To Source @ 25C
1000
1200
1000
mJ
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
C
Lead Temperature
(1/8" from case for 5 secs.)
275
275
275
C
Note 1: V
DD
= 50V, I
D
= as noted
THERMAL RESISTANCE (MAXIMUM) at T
A
= 25C
R
thJC
Junction-to-Case
.76
C/W
R
thJA
Junction-to-Ambient
40
C/W
Free Air Operation
Derate above 25C T
C
1.32
W/C
3.1 - 98
OM6025SC - OM6032SC
3.1
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
.140
.270
MAX.
.035
.005
.045
.695
.685
.250
TYP.
.
125
2 PLACES
.
125 TYP.
.250 TYP.
.145
REF.
.500
MIN.
.550
.530
.285
.002
.060 DIA. TYP.
3 PLACES
.400
.940
.200
OM6028SC, OM6031SC, OM6032SC
OM6025SC, OM6026SC, OM6027SC
NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
MECHANICAL OUTLINES
3.1 - 99
OM6025SC - OM6032SC
3.1
ELECTRICAL CHARACTERISTICS:
OM6025SC, OM6032SC
(T
C
= 25 unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
V
(BR)DSS
400
-
-
Vdc
Zero Gate Voltage Drain
I
DSS
mAdc
(V
DS
= 400 V, V
GS
= 0)
-
-
0.25
(V
DS
= 400 V, V
GS
= 0, T
J
= 125 C)
-
-
1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
I
GSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSR
-
-
100
nAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
2.0
3.0
4.0
(T
J
= 125 C)
1.5
-
3.5
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 12 Adc)
r
DS(on)
-
-
0.20
Ohm
Drain-Source On-Voltage (V
GS
= 10 Vdc)
V
DS(on)
Vdc
(I
D
= 24 A)
-
-
5.4
(I
D
= 12 A, T
J
= 125 C)
-
-
5.4
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12 Adc)
g
FS
14
-
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
C
iss
-
5600
-
pF
Output Capacitance
f = 1.0 MHz)
C
oss
-
78
-
Transfer Capacitance
C
rss
-
230
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
70
-
ns
Rise Time
(V
DD
= 250 V, I
D
=
24 A,
t
r
-
190
-
Turn-Off Delay Time
R
gen
= 4.3 ohms)
t
d(off)
-
160
-
Fall Time
t
f
-
160
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 24 A,
Q
g
-
110
140
nC
Gate-Source Charge
V
GS
= 10 V)
Q
gs
-
20
-
Gate-Drain Charge
Q
gd
-
55
-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
SD
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 24 A, d/dt = 100 A/s)
t
on
**
ns
Reverse Recovery Time
t
rr
-
500
1000
ELECTRICAL CHARACTERISTICS:
OM6026SC, OM6031SC
(T
C
= 25 unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
V
(BR)DSS
500
-
-
Vdc
Zero Gate Voltage Drain
I
DSS
mAdc
(V
DS
= 500 V, V
GS
= 0)
-
-
0.25
(V
DS
= 500 V, V
GS
= 0, T
J
= 125 C)
-
-
1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
I
GSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSR
-
-
100
nAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
2.0
3.0
4.0
(T
J
= 125 C)
1.5
-
3.5
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 11 Adc)
r
DS(on)
-
-
0.27
Ohm
Drain-Source On-Voltage (V
GS
= 10 Vdc)
V
DS(on)
Vdc
(I
D
= 22 A)
-
-
8.0
(I
D
= 11 A, T
J
= 125 C)
-
-
8.0
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 11 Adc)
g
FS
13
-
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
C
iss
-
5600
-
pF
Output Capacitance
f = 1.0 MHz)
C
oss
-
680
-
Transfer Capacitance
C
rss
-
200
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
70
-
ns
Rise Time
(V
DD
= 250 V, I
D
=
22 A,
t
r
-
190
-
Turn-Off Delay Time
R
gen
= 4.3 ohms)
T
d(off)
-
160
-
Fall Time
t
f
-
160
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 22 A,
Q
g
-
115
140
nC
Gate-Source Charge
V
GS
= 10 V)
Q
gs
-
20
-
Gate-Drain Charge
Q
gd
-
60
-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
SD
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 22 A, d/dt = 100 A/s)
t
on
**
ns
Reverse Recovery Time
t
rr
-
500
1000
* Indicates Pulse Test = 300 sec, Duty Cycle = 2%
** Limited by circuit inductance
OM6025SC - OM6032SC
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ELECTRICAL CHARACTERISTICS:
OM6027SC, OM6028SC
(T
C
= 25 unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
V
(BR)DSS
1000
-
-
Vdc
Zero Gate Voltage Drain
I
DSS
mAdc
(V
DS
= 1000 V, V
GS
= 0)
-
-
0.25
(V
DS
= 1000 V, V
GS
= 0, T
J
= 125 C)
-
-
1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
I
GSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSR
-
-
100
nAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
2.0
3.0
4.0
(T
J
= 125 C)
1.5
-
3.5
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 5 Adc)
r
DS(on)
-
-
1.3
Ohm
Drain-Source On-Voltage (V
GS
= 10 Vdc)
V
DS(on)
Vdc
(I
D
= 10 A)
-
-
15
(I
D
= 5 A, T
J
= 125 C)
-
-
15.3
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5 Adc)
g
FS
5.0
-
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
C
iss
-
3900
-
pF
Output Capacitance
f = 1.0 MHz)
C
oss
-
300
-
Transfer Capacitance
C
rss
-
65
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
40
-
ns
Rise Time
(V
DD
= 250 V, I
D
=
5 A,
t
r
-
100
-
Turn-Off Delay Time
R
gen
= 4.3 ohms)
t
d(off)
-
100
-
Fall Time
t
f
-
100
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 10 A,
Q
g
-
100
140
nC
Gate-Source Charge
V
GS
= 10 V)
Q
gs
-
20
-
Gate-Drain Charge
Q
gd
-
40
-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
SD
-
-
1.5
Vdc
Forward Turn-On Time
(I
S
= 10 A, d/dt = 100 A/s)
t
on
**
ns
Reverse Recovery Time
t
rr
-
600
1000
* Indicates Pulse Test = 300 sec, Duty Cycle = 2%
** Limited by circuit inductance