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Электронный компонент: OM6052SJ

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3.1 - 105
3.1
High Current, High Voltage 100V Thru 1000V,
Up To 100 Amp N-Channel, Size 7 MOSFETs,
High Energy Capability
HIGH CURRENT MOSFET IN ISOLATED, TO-267
HERMETIC PACKAGE, SIZE 7 DIE, LOW R
DS(on)
FEATURES
Isolated Hermetic Metal Package
Size 7 Die, High Energy
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
@ 25C
4 11 R0
OM6054SJ
OM6055SJ
OM6052SJ
OM6053SJ
OM6050SJ
OM6051SJ
PART NUMBER
V
DS
R
DS(on)
I
D
(Continuous)
OM6050SJ
100 V
.014
100 A
OM6051SJ
200 V
.030 55
A
OM6052SJ
500 V
.160 30
A
OM6053SJ
600 V
.230 25
A
OM6054SJ
800 V
.500 18
A
OM6055SJ
1000 V
.800 10
A
SCHEMATIC
MECHANICAL OUTLINE
.950
.930
.150
.140
.750
.500
.805
.795
.200
.400
.200
.165
.155
.665
.645
.160
.290
.260
.065
.055
.065
.055
1
3
2
1
2 3
TO-267
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM6050SJ - OM6055SJ
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 C unless otherwise noted)
Parameter
Symbol
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
Unit
Drain Source Voltage
V
DS
100
200
500
600
800
1000
V
Drain Gate Voltage (R
GS
= 1.0 M )
V
DGR
100
200
500
600
800
1000
V
Continuous Drain Current @ T
C
= 25C
2
I
D
100
55
30
25
18
10
A
Continuous Drain Current @ TC = 100C
2
I
D
43
23
13
10
7
4
A
Pulsed Drain Current1
I
DM
235
135
80
75
50
30
A
Max. Power Dissipation @ T
C
= 25C
P
D
280
W
Max. Power Dissipation @ T
C
= 100C
P
D
110
W
Linear Derating Factor Junction-to-Case
2.22
W/C
Linear Derating Factor Junction-to-Ambient
.025
W/C
Operating and Storage Temp. Range
T
J
, T
stg
-55 to +150
C
Lead Temperature (1/16" from case for 10 sec.)
275
C
Notes: 1. Pulse Test: Pulse Width
300
m
sec, Duty Cycle
2%. 2. Package Pin Limitation: 35 Amps.
THERMAL RESISTANCE (MAXIMUM)
@ TA = 25 C
Junction-to-Case
R
thJC
.45
C/W
Junction-to-Ambient (Free Air Operation)
R
thJA
40
C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
V
GS(th)
All
2.0
4.0
V
Gate Source Leakage Current
V
GS
= 20 V
DC
I
GSS
All
100
nA
Off State Drain-Source Leakage
V
DS
= V
DSS
x 0.8 T
C
= 25C
I
DSS
All
10
A
V
GS
= 0V T
C
= 125C
I
DSS
All
.10
mA
OM6050SJ
100
OM6051SJ
200
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 A
V
DSS
OM6052SJ
500
V
OM6053SJ
600
OM6054SJ
800
OM6055SJ
1000
OM6050SJ
.014
OM6051SJ
.030
Drain-Source Breakdown Voltage
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6052SJ
.160
OM6053SJ
.230
OM6054SJ
.500
OM6055SJ
.800
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.