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Электронный компонент: OM6506SW

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PART
I
C
(Cont.)
V
(BR)CES
V
CE (sat)
(Typ.)
T
f
(Typ.)
q
q
JC
P
D
T
J
NUMBER
@ 90C, A
V
V
ns
C/W
W
C
OM6505SA
15
500
2.8
400
1.75
72
150
OM6506SA
20
500
2.8
400
1.00
125
150
3.1 - 143
3.1
500 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
FEATURES
Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Available Screened To MIL-S-19500, TX, TXV And S Levels
Low Conductive Losses
Ceramic Feedthroughs Available
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS
@ 25C Unless Specified Otherwise
OM6505SA
OM6506SA
SCHEMATIC
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
Collector
Emitter
1
2
3
C
E
G
Gate
MECHANICAL OUTLINE
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
OM6505SA - OM6506SA
3.1
205 Craw
fo
rd St
re
et, Le
o
m
inster, MA 01
4
53 USA (50
8) 534
-57
76 FAX (508) 537-4246
PRELIMINARY DATA: OM6505SA
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
500
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
2.0
4.0
V
V
CE
= V
GE
, I
C
= 250 A
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
2.8
3.0
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 100C
Dynamic
g
fs
Forward Transductance
5.0
S
V
CE
= 20 V, I
C
= 15 A
C
ies
Input Capacitance
1700
pF
V
GE
= 0
C
oes
Output Capacitance
215
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
115
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
60
nS
V
CC
= 400 V, I
C
= 15 A
t
r
Rise Time
240
nS
V
GE
= 15 V, R
g
= 47
Switching-Inductive Load
t
r(Volt)
Off Voltage Rise Time
.55
S
V
CEclamp
= 400 V, I
C
= 15 A
t
f
Fall Time
.60
S
V
GE
= 15 V, R
g
= 100
t
cross
Cross-Over Time
1.2
S
L = 0.1 mH, T
j
= 100C
E
off
Turn-Off Losses
3.0
mJ
PRELIMINARY DATA: OM6506SA
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
500
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 100C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
2.0
4.0
V
V
CE
= V
GE
, I
C
= 250 A
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 20 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
2.8
3.0
V
V
GE
= 15 V, I
C
= 20 A
Saturation Voltage
T
C
= 100C
Dynamic
g
fs
Forward Transductance
8.0
S
V
CE
= 15 V, I
C
= 20 A
C
ies
Input Capacitance
3500
pF
V
GE
= 0
C
oes
Output Capacitance
250
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
50
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
100
nS
V
CC
= 400 V, I
C
= 20 A
t
r
Rise Time
200
nS
V
GE
= 15 V, R
g
= 100
T
d(off)
Turn-Off Delay Time
1.0
S
T
j
= 125C
t
f
Fall Time
2.0
S
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
1.0
nS
V
CEclamp
= 400 V, I
C
= 20 A
t
r
Current Fall Time
3.0
S
V
GE
= 15 V, R
g
= 100
L = 0.1 mH, T
j
= 125C