ChipFind - документация

Электронный компонент: OMY440SR

Скачать:  PDF   ZIP
3.1 - 5
3.1
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFETs In Hermetic Metal Package
4 11 R2
Supersedes 1 07 R1
POWER MOSFETS IN HERMETIC ISOLATED
TO-257AA PACKAGE
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
Equivalent To IRFY 140 Series
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
@ 25C
OMY340
OMY440
OMY140
OMY240
PART NUMBER
V
DS
R
DS(on)
I
D(MAX)
OMY140
100V
.115
14A
OMY240
200V
.21
14A
OMY340
400V
.58
10A
OMY440
500V
.88
7A
SCHEMATIC CONNECTION DIAGRAM
1 2 3
1. GATE
2. DRAIN
3. SOURCE
3.1 - 6
OMY140 - OMY440
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
STATIC P/N OMY140
STATIC P/N OMY240
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS
= - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
14
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
14
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
1.40 1.73
V
V
GS
= 10 V, I
D
= 15 A
V
DS(on)
Static Drain-Source On-State
1.8
2.1
V
V
GS
= 10 V, I
D
= 10 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
.115
V
GS
= 10 V, I
D
= 15 A
R
DS(on)
Static Drain-Source On-State
0.21
V
GS
= 10 V, I
D
= 10 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
.20
V
GS
= 10 V, I
D
= 15 A,
R
DS(on)
Static Drain-Source On-State
0.40
V
GS
= 10 V, I
D
= 10 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
10
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 15 A
g
fs
Forward Transductance
1
6.0
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 10 A
C
iss
Input Capacitance
1275
pF
V
GS
= 0
C
iss
Input Capacitance
1000
pF
V
GS
= 0
C
oss
Output Capacitance
550
pF
V
DS
= 25 V
C
oss
Output Capacitance
250
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
160
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
100
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
16
ns
V
DD
= 30 V, I
D
@
5 A
T
d(on)
Turn-On Delay Time
17
ns
V
DD
=75 V, I
D
@
18 A
t
r
Rise Time
19
ns
R
g
= 5
W
, V
GS
=10 V
t
r
Rise Time
52
ns
R
g
=5
W
, V
GS
= 10 V
T
d(off)
Turn-Off Delay Time
42
ns
T
d(off)
Turn-Off Delay Time
36
ns
t
f
Fall Time
24
ns
t
f
Fall Time
30
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 27
A
Modified MOSPOWER
I
S
Continuous Source Current
- 18
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 108
A
the integral P-N
I
SM
Source Current
1
- 72
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 2.0
V
T
C
= 25 C, I
S
= -24 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
-1.5
V
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
t
rr
Reverse Recovery Time
200
ns
T
J
= 150 C,I
F
= I
S
,
t
rr
Reverse Recovery Time
350
ns
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
(
W
)
(
W
)
3.1 - 7
OMY140 - OMY440
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
STATIC P/N OMY340
STATIC P/N OMY440
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS
= - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
10
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
4.5
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
2.5
2.9
V
V
GS
= 10 V, I
D
= 5 A
V
DS(on)
Static Drain-Source On-State
3.2
3.52
V
V
GS
= 10 V, I
D
= 4 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.58
V
GS
= 10 V, I
D
= 5 A
R
DS(on)
Static Drain-Source On-State
0.88
V
GS
= 10 V, I
D
= 4 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
1.16
V
GS
= 10 V, I
D
= 5 A,
R
DS(on)
Static Drain-Source On-State
1.76
V
GS
= 10 V, I
D
= 4 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
4.0
4.4
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 5 A
g
fs
Forward Transductance
1
4.0
4.8
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 4 A
C
iss
Input Capacitance
1150
pF
V
GS
= 0
C
iss
Input Capacitance
1225
pF
V
GS
= 0
C
oss
Output Capacitance
165
pF
V
DS
= 25 V
C
oss
Output Capacitance
200
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
70
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
85
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
17
ns
V
DD
= 175 V, I
D
=
5 A
T
d(on)
Turn-On Delay Time
17
ns
V
DD
= 200 V, I
D
=
4 A
t
r
Rise Time
12
ns
R
g
= 5
W
, V
DS
=10V
t
r
Rise Time
5
ns
R
g
= 5
W
, V
DS
=10 V
T
d(off)
Turn-Off Delay Time
45
ns
T
d(off)
Turn-Off Delay Time
42
ns
t
f
Fall Time
30
ns
t
f
Fall Time
14
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 10
A
Modified MOSPOWER
I
S
Continuous Source Current
- 8
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 40
A
the integral P-N
I
SM
Source Current
1
- 32
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 2
V
T
C
= 25 C, I
S
= -10 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 2
V
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
t
rr
Reverse Recovery Time
530
ns
T
J
= 150 C,I
F
= I
S
,
t
rr
Reverse Recovery Time
700
ns
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
(
W
)
(
W
)
OMY140 - OMY440
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OMY140
OMY240
OMY340
OMY440
Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25C
Continuous Drain Current
2
14
14
10
8
A
I
D
@ T
C
= 100C
Continuous Drain Current
2
14
11
6
5
A
I
DM
Pulsed Drain Current
1
56
56
40
32
A
V
GS
Gate-Source Voltage
20
20
20
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1.0
1.0
1.0
1.0
W/C
Junction To Ambient Linear Derating Factor
.015
.015
.015
.015
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150 -55 to 150
-55 to 150
C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.00
C/W
R
thJA
Junction-to-Ambient
65
C/W
Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
PACKAGE OPTIONS
6 PIN SIP
MOD PAK