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25A
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P100 SERIES
1
Bulletin I27125 rev. A 04/99
www.irf.com
I
D
25
A
@ T
C
85
C
I
FSM
@
50Hz
357
A
@ 60Hz
375
A
I
2
t
@
50Hz
637
A
2
s
@ 60Hz
580
A
2
s
I
2
t
6365
A
2
s
V
RRM
400 to 1200
V
V
INS
2500
V
T
J
- 40 to 125
C
Parameters
P100
Units
Major Ratings and Characteristics
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 V
RRM
, V
DRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
P100 Series
2
Bulletin I27125 rev. A 04/99
www.irf.com
V
RRM
maximum repetitive
V
RSM
maximum non-
V
DRM
maximum
I
RRM
max.
Type number
peak reverse voltage
repetitive peak reverse
repetitive peak off-state
@ T
J
max.
voltage
voltage
V
V
V
mA
P101, P121, P131
400
500
400
10
P102, P122, P132
600
700
600
P103, P123, P133
800
900
800
P104, P124, P134
1000
1100
1000
P105, P125, P135
1200
1300
1200
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
D
Maximum DC output current
2 5
A
@ T
C
= 85C, full bridge
I
TSM
Max. peak one-cycle
357
t = 10ms
No voltage
I
FSM
non-repetitive on-state
375
t = 8.3ms
reapplied
or forward current
300
t = 10ms
100% V
RRM
315
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
637
t = 10ms
No voltage
Initial T
J
= T
J
max.
580
t = 8.3ms
reapplied
450
t = 10ms
100% V
RRM
410
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
6365
A
2
s
t = 0.1 to 10ms, no voltage reapplied
I
2
t for time tx = I
2
t
.
tx
V
T(TO)
Max. value of threshold voltage
0.82
V
T
J
= 125C
r
t1
Max. level value of on-state
slope resistance
V
TM
Max. peak on-state or
V
FM
forward voltage drop
di/dt
Maximum non repetitive rate of
T
J
= 125C from 0.67 V
DRM
rise of turned on current
I
TM
=
x I
T(AV)
, I
g
= 500mA, tr < 0.5s, tp > 6s
I
H
Maximum holding current
130
mA
T
J
= 25C anode supply = 6V, resistive load, gate open
I
L
Maximum latching current
250
mA
T
J
= 25C anode supply = 6V, resistive load
Parameter
P100
Units Conditions
On-state Conduction
A
A
2
s
12
m
T
J
= 125C, Av. power = V
T(TO)
* I
T(AV)
+ r
t
+ (I
T(RMS)
)
2
1.35
V
T
J
= 25C, I
TM
=
x I
T(AV)
200
A/s
P100 Series
3
Bulletin I27125 rev. A 04/99
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current at V
RRM
, V
DRM
I
RRM
Max peak reverse leakage current
100
A
T
J
= 25C
50Hz, circuit to base, all terminal shorted,
T
J
= 25C, t = 1s
Blocking
Parameter
P100
Units Conditions
200
V/s
T
J
= 125C, exponential to 0.67 V
DRM
gate open
10
mA
T
J
= 125C, gate open circuit
V
INS
RMS isolation voltage
2500
V
P
GM
Maximum peak gate power
8
P
G(AV)
Maximum average gate power
2
I
GM
Maximum peak gate current
2
A
- V
GM
Maximum peak negative
gate voltage
V
GT
Maximum gate voltage required
3
T
J
= - 40C
to trigger
2
T
J
= 25C
Anode Supply = 6V resistive load
1
T
J
= 125C
I
GD
Maximum gate current
90
T
J
= - 40C
required to trigger
60
mA
T
J
= 25C
Anode Supply = 6V resistive load
35
T
J
= 125C
V
GD
Maximum gate voltage
that will not trigger
I
GD
Maximum gate current
that will not trigger
Parameter
P100
Units Conditions
10
Triggering
W
V
0.2
V
T
J
= 125C, rated V
DRM
applied
2
mA
T
J
= 125C, rated V
DRM
applied
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 125
R
thJC
Max. thermal resistance,
2.24
K/W
DC operation per junction
junction to case
R
thCS
Max. thermal resistance,
0.10
K/W
Mounting surface, smooth and greased
case to heatsink
T
Mounting torque, base to heatsink
4
Nm
wt
Approximate weight
58 (2.0)
g (oz)
Parameter
P100
Units
Conditions
Thermal and Mechanical Specification
C
A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound
P100 Series
4
Bulletin I27125 rev. A 04/99
www.irf.com
Outline Table
*
To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W
Circuit "0"
Circuit "2"
Circuit "3"
Terminal Positions
Schematic diagram
diagram
Single Phase
Single Phase
Single Phase
Hybrid Bridge
Hybrid Bridge
All SCR
Common Cathode
Doubler
Bridge
Basic series
P10.
P12.
P13.
With voltage
P10.K
P12.K
P13.K
suppression
With free-wheeling
P10.W
-
-
diode
With both voltage
suppression and
P10.KW
-
-
free-wheeling diode
Circuit Type and Coding *
12.7 (0.50)
5.
2 (
0
.
20)
32.
5 (
1
.
2
8
) M
A
X
.
25 (
0
.
98)
M
A
X
.
2.
5

(
0
.
10)
M
A
X
.
45 (1.77)
1.65 (0. 06)
63.5 (2.50)
Faston 6.35x0.8 (0.25x 0.03)
15
.5
(
0
.6
1
)
M
A
X
.
23.
2 (
0
.
91)
12.7 (0.50)
4.
6 (
0
.
18)
4
.6
(
0
.1
8
)
33.8 (1.33)
48.7 (1.91)
All dimensions in millimeters (inches)
(-)
G1
G2
AC1
AC2
(+)
(-)
G2
AC1
AC2
G1
(+)
AC2
(-)
AC1
G 1
G2
G3
G4
(+)
P100 Series
5
Bulletin I27125 rev. A 04/99
www.irf.com
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
Fig. 2 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
0
5
10
15
0
5
10
15
180
120
90
60
30
Average On-state Current (A)
M
a
x
i
m
u
m
A
v
e
r
a
g
e
O
n
-
s
ta
te
P
o
w
e
r
L
o
s
s
(
W
)
RMS Limit
Conduction angle
P100 Series
T = 125C
Per Junction
J
0
5
10
15
20
0
5
10
15
20
Average On-state Current (A)
M
a
x
i
m
u
m
A
v
er
a
g
e
O
n
-
s
ta
te
P
o
w
e
r

L
o
s
s
(
W
)
Conduct ion Period
DC
180
120
90
60
30
RMS Limit
P100 Series
T = 125C
Per Junction
J
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Voltage Drop Characteristics
1
10
100
1000
0
1
2
3
4
5
6
P100 Series
Per Junction
T = 125 C
T = 25 C
J
J
I
n
s
t
a
n
ta
n
e
o
u
s
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
Instantaneous On-state Voltage (V)
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
2 K
/W
3 K
/W
5 K/W
7 K/W
10 K/W
R
=
1
.5
K/W
- D
el
ta R
thS
A
0
10
20
30
40
50
60
0
5
10
15
20
25
180
(Sine)
Total Output Current (A)
Ma
x
i
m
u
m
T
o
t
a
l
P
o
w
e
r

L
o
s
s
(
W
)
P100 Series
T = 125C
J
70
80
90
100
110
120
130
0
5
10
15
20
25
30
180
(Sine)
180
(Rect)
Fully Turned.on
Total Output Current (A)
Ma
x
i
m
u
m
A
l
l
o
w
a
bl
e

C
a
s
e
T
e
m
p
e
r
a
t
u
r
e

(
C
)
P100 Series
Per Module
P100 Series
6
Bulletin I27125 rev. A 04/99
www.irf.com
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 9 - Gate Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
150
200
250
300
350
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
e
ak

Ha
l
f
S
i
ne
W
a
v
e

O
n
-
s
t
a
t
e
C
u
r
r
e
nt

(
A
)
P100 Series
Per Junction
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
100
150
200
250
300
350
400
0.01
0.1
1
Pulse Train Duration (s)
P
e
ak
Ha
l
f

S
i
n
e
W
a
v
e

O
n
-
s
t
a
t
e
C
u
r
r
e
nt
(
A
)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
P100 Series
Per Junction
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Steady State Value:
R = 2.24K/W
(DC Operation)
P100 Series
Per Junction
thJC
th
J
C
Tr
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e

Z

(
K
/
W
)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2)
(1)
Instantaneous Gate Current (A)
Ins
t
ant
a
ne
o
u
s
G
a
t
e
V
o
l
t
ag
e

(
V
)
Frequency Limited
By PG(AV)
TJ
=
-
4
0

C
TJ

=
2
5
C
T
J
=

125
C
a)Recommended load line for
b)Recommended load line for
(1) PGM = 100 W, tp = 500 s
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
IGD
P100 Series
rated di/dt : 10V, 20 ohms, tr <= 1s
rated di/dt : 10 V, 65 ohms, tr <= 1s
VGD
P100 Series
7
Bulletin I27125 rev. A 04/99
www.irf.com
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