Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
I
T(AV)
85
A
@ T
C
85
C
I
T(RMS)
135
A
I
TSM
@
50Hz
2450
A
@ 60Hz
2560
A
I
2
t
@
50Hz
30
KA
2
s
@ 60Hz
27
KA
2
s
V
DRM
/V
RRM
400 to 1200
V
t
q
range (see table)
10 to 20
s
T
J
- 40 to 125
C
Parameters
ST083S
Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
ST083S SERIES
INVERTER GRADE THYRISTORS
Stud Version
85A
1
Bulletin I25185 rev. C 03/03
www.irf.com
ST083S Series
2
www.irf.com
Bulletin I25185 rev. C 03/03
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
10
1000
1100
12
1200
1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
210
120
330
270
2540
1930
400Hz
200
120
350
210
1190
810
1000Hz
150
80
320
190
630
400
A
2500Hz
70
25
220
85
250
100
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Case temperature
60
85
60
85
60
85
C
Equivalent values for RC circuit
22
/ 0.15F
22
/ 0.15F
22
/ 0.15F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
85
A
180 conduction, half sine wave
@ Case temperature
85
C
I
T(RMS)
Max. RMS on-state current
135
DC @ 77C case temperature
I
TSM
Max. peak, one half cycle,
2450
t = 10ms
No voltage
non-repetitive surge current
2560
A
t = 8.3ms
reapplied
2060
t = 10ms
100% V
RRM
2160
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
30
t = 10ms
No voltage
Initial T
J
= T
J
max
27
t = 8.3ms
reapplied
21
t = 10ms
100% V
RRM
19
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
300
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST083S
Units Conditions
On-state Conduction
KA
2
s
ST083S
30
ST083S Series
3
www.irf.com
Bulletin I25185 rev. C 03/03
V
TM
Max. peak on-state voltage
2.15
I
TM
= 300A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Parameter
ST083S
Units
Conditions
On-state Conduction
1.46
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.52
(I >
x I
T(AV)
), T
J
= T
J
max.
V
2.32
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
2.34
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 100A, commutating di/dt
= 10A/s
V
R
= 50V, t
p
= 200s, dv/dt = 200V/s
Switching
Parameter
ST083S
Units
Conditions
1000
A/s
t
d
Typical delay time
0.80
s
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max., linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST083S
Units
Conditions
Blocking
500
V/
s
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
40
P
G(AV)
Maximum average gate power
5
I
GM
Max. peak positive gate current
5
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST083S
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
Min
Max
W
T
J
= T
J
max, f = 50Hz, d% = 50
t
q
Max. turn-off time
10
20
ST083S Series
4
www.irf.com
Bulletin I25185 rev. C 03/03
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- S = Compression bonding Stud
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
6
- P = Stud Base 1/2"-20UNF-2A threads
7
- Reapplied dv/dt code (for t
q
Test Condition)
8
- t
q
code
9
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
T
J
Max. junction operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance, junction to case
0.195
DC operation
R
thCS
Max. thermal resistance, case to heatsink
0.08
Mounting surface, smooth, flat and greased
T
Mounting torque, 10%
15.5
Nm
(137)
(Ibf-in)
14
Nm
(120)
(Ibf-in)
wt
Approximate weight
130
g
Case style
TO-209AC (TO-94)
See Outline Table
Parameter
ST083S
Units
Conditions
Thermal and Mechanical Specifications
C
K/W
Non lubricated threads
Lubricated threads
Ordering Information Table
5
6
8
9
ST
08
3
S
12
P
F
N
0
3
4
7
Device Code
1
2
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180
0.034
0.025
120
0.041
0.042
90
0.052
0.056
K/W
T
J
= T
J
max.
60
0.076
0.079
30
0.126
0.127
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
dv/dt - t
q
combinations available
dv/dt (V/s)
200
t
q
(s)
10
FN
up to 800V
20
FK
t
q
(s)
only for
20
FK
1000/1200V
ST083S Series
5
www.irf.com
Bulletin I25185 rev. C 03/03
Outline Table
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Fast-on Terminals
C.S. 0.4 mm 2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21
(
0
.
8
3)
1
2
.
5
(
0
.
49)
M
A
X
.
15
7 (
6
.
1
8
)
1
70 (6.
6
9
)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
MA
X
.
70
(
2
.
7
5)
M
I
N
.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
2
9
(
1
.1
4
)
M
A
X
.
SW 27
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
20
(0
.7
9)
M
IN
.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9.
5
(0
.3
7)
M
IN
.
WHITE GATE
215 (8.46)
AMP. 280000-1
REF-250
70
80
90
100
110
120
130
0
20
40
60
80
100 120 140
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
Ca
s
e
T
e
mp
e
r
a
t
u
r
e
(
C)
Conduction Period
ST083S Series
R (DC) = 0.195 K/ W
thJC
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
80
90
100
110
120
130
0
10 20 30 40 50 60 70 80 90
M
a
x
i
m
u
m A
l
l
o
w
a
b
l
e
Ca
s
e
T
e
mp
e
r
a
t
u
r
e
(
C)
30
60
90
120
180
Average On-state Current (A)
Conduc tion Angle
ST083S Series
R (DC) = 0.195 K/ W
thJC
ST083S Series
6
www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0.1
K/
W
- D
elt
a R
th
SA
0.2
K/
W
0.3
K/W
0.4 K
/ W
0.5 K
/ W
0.8 K
/ W
1.2 K/ W
0
50
100
150
200
250
0
20
40
60
80
100 120 140
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
m
u
m
A
v
e
r
a
g
e
O
n
-s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST083S Series
T = 125C
J
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
= 0
.1
K
/W
- D
elt
a
R
th
SA
0.2
K/
W
0.
3 K/
W
0.4
K/
W
0.5
K/W
0.8 K
/W
1.2 K/
W
0
20
40
60
80
100
120
140
160
180
0
10 20 30 40 50 60 70 80 90
180
120
90
60
30
RMS Limit
Conduc tion Angle
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST083S Series
T = 125C
J
1000
1200
1400
1600
1800
2000
2200
1
10
100
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
P
e
ak
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
tate
C
u
r
r
e
n
t (
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST083S Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
0.01
0.1
1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Pe
a
k
H
a
l
f
S
i
n
e W
a
v
e
O
n
-
s
t
a
t
e
Cu
r
r
ent
(
A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST083S Series
Maximum Non Repetitive Surge Current
ST083S Series
7
www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
100
1000
10000
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
T = 25C
J
I
n
s
t
an
tan
e
o
u
s
O
n
-
s
t
a
te
C
u
r
r
e
n
t (
A
)
Instantaneous On-state Voltage (V)
T = 125C
J
ST083S Series
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
ST083S Series
Steady State Value
R = 0.195 K/ W
(DC Operation)
thJC
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
Ma
x
i
m
u
m
R
e
v
e
r
s
e R
e
c
o
v
e
r
y
C
u
r
r
ent
-
I
r
r
(
A
)
Rate Of Fall Of Forward Current - di/ dt (A/ s)
ST083S Series
T = 125 C
I = 500 A
300 A
200 A
J
100 A
50 A
TM
20
40
60
80
100
120
140
160
10 20 30 40 50 60 70 80 90 100
ST083S Series
T = 125 C
I = 500 A
300 A
200 A
J
100 A
50 A
Rate Of Fall Of On-state Current - di/ dt (A/ s)
M
a
x
i
mu
m R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
Ch
a
r
g
e
-
Q
r
r
(
C
)
TM
Fig. 11 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
P
e
a
k
O
n
-
s
t
a
te
C
u
r
r
e
n
t
(
A
)
1000
1500
2000
3000
200
500
Snub ber circuit
R = 22 ohms
C = 0.15 F
V = 80% V
s
s
D
DRM
ST083S Series
Sinusoidal pulse
T = 60C
C
1E4
tp
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
1000
1500
2000
3000
200
500
Snubb er circuit
R = 22 ohms
C = 0.15 F
V = 80% V
s
s
D
DRM
ST083S Series
Sinusoidal pulse
T = 85C
C
tp
1E1
ST083S Series
8
www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 13 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Snub ber circuit
R = 22 ohms
C = 0.15 F
V = 80% V
s
s
D
DRM
ST083S Series
Trap ezoid al p ulse
T = 60C
di/dt = 50A/s
C
Pulse Basewidth (s)
Pe
a
k
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
tp
1E41E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
1000
1500
2000
200
500
Snub ber circuit
R = 22 ohms
C = 0.15 F
V = 80% V
s
s
D
DRM
ST083S Series
Trap ezoid al pulse
T = 85C
di/dt = 50A/ s
C
tp
1E1
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
400
2500
100
1000
1500
2000
3000
200
500
Snubb er circ uit
R = 22 ohms
C = 0.15 F
V = 80% V
s
s
D
DRM
ST083S Series
Trapezoidal pulse
T = 60C
di/ dt = 100A/ s
C
Pulse Basewidth (s)
Pe
a
k
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
tp
1E4
50 Hz
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
1000
1500
2000
200
500
Snub ber circuit
R = 22 ohms
C = 0.15 F
V = 80% V
s
s
D
DRM
ST083S Series
Trapezoidal pulse
T = 85C
di/ dt = 100A/s
C
tp
1E1
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules per pulse
2
1
0.5
0.3
0.2
0.1
ST083S Series
Sinusoidal pulse
10
5
P
e
a
k
O
n
-
s
tate
C
u
r
r
e
n
t (
A
)
3
tp
1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
ST083S Series
Rectangula r pulse
di/ dt = 50A/ s
20 joules p er pulse
7.5
4
2
1
0.5
0.3
0.2
0.1
tp
1E1
ST083S Series
9
www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 15 - Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
(1)
(2)
Instantaneous Gate Current (A)
I
n
s
t
a
n
t
a
ne
ou
s
G
a
t
e
V
o
l
t
a
g
e
(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST083S Series
(4)
Frequency Limited by PG(AV)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
PDF 
ZIP