1473A
PHASE CONTROL THYRISTORS
Bulletin I25202 rev. A 01/00
1
ST1000C..K SERIES
Hockey Puk Version
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Features
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
ST1000C..K
Units
I
T(AV)
1473
A
@ T
hs
55
C
I
T(RMS)
2913
A
@ T
hs
25
C
I
TSM
@ 50Hz
20.0
KA
@ 60Hz
21.2
KA
I
2
t
@ 50Hz
2000
KA
2
s
@ 60Hz
1865
KA
2
s
I
2
t
20000
KA
2
s
V
DRM
/V
RRM
range
1200 to 2600
V
t
q
typical
300
s
T
J
range
- 40 to 125
C
case style A-24 (K-PUK)
ST1000C..K Series
2
Bulletin I25202 rev. A 01/00
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= 125C
V
V
mA
12
1200
1300
16
1600
1700
20
2000
2100
22
2200
2300
24
2400
2500
26
2600
2700
ST1000C..K
100
I
T(AV)
Maximum average on-state current
1473 (630)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
Double side (single side) cooled
I
T(RMS)
Maximum RMS on-state current
6540
A
DC @ 25C heatsink temp. double side cooled
I
TSM
Maximum peak, one-cycle,
20.0
KA
t = 10ms
No voltage
non-repetitive surge current
21.2
t = 8.3ms
reapplied
17.0
t = 10ms
100% V
RRM
18.1
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
2000
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
1865
t = 8.3ms
reapplied
1445
t = 10ms
100% V
RRM
1360
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
20000
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
0.950
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)2
High level value of threshold voltage
1.024
(I >
x I
T(AV)
), T
J
= T
J
max.
r
t1
Low level value of on-state slope resistance
0.283
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
r
t2
High level value of on-state slope resistance
0.265
(I >
x I
T(AV)
), T
J
= T
J
max.
V
TM
Maximum on-state voltage drop
1.80
V
I
pk
= 3000A, T
J
= 125C, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J
= 25C, anode supply 12V resistive load
I
L
Typical latching current
1000
Parameter
ST1000C..K
Units Conditions
On-state Conduction
ST1000C..K Series
3
Bulletin I25202 rev. A 01/00
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dv/dt
Maximum critical rate of rise of off-state
500
V/s
T
J
= T
J
max., linear to 80% rated V
DRM
voltage
I
RRM
Maximum peak reverse and off-state
100
s
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
I
DRM
leakage current
Parameter
ST1000C..K
Units Conditions
Blocking
di/dt
Maximum non repetitive rate of rise
1000
A/s
Gate drive 20V, 20
, t
r
< 1s
of turned-on current
T
J
= T
J
max., anode voltage < 80% V
DRM
t
d
Typical delay time
1.9
s
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25C
t
q
Typical turn-off time
300
A/s
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/s, V
R
= 50V
dv/dt = 20V/s, Gate 0V 100
, t
p
< 500s
Parameter
ST1000C..K
Units Conditions
Switching
Parameter
ST1000C..K
Units Conditions
Triggering
P
GM
Maximum peak gate power
16
W
T
J
= T
J
max., t
p
< 5ms
P
G(AV)
Maximum peak average gate power
3
W
T
J
= T
J
max., f = 50Hz, d% = 50
I
GM
Maximum peak positive gate current
3.0
A
T
J
= T
J
max., t
p
< 5ms
+ V
GM
Maximum peak positive gate voltage
20
V
- V
GM
Maximum peak negative gate voltage
5.0
V
I
GT
DC gate current required to trigger
TYP.
MAX.
200
-
T
J
= -40C
100
200
mA
T
J
=
25C
50
-
T
J
= 125C
V
GT
DC gate voltage required to trigger
1.4
-
T
J
= -40C
1.1
3.0
V
T
J
=
25C
0.9
-
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
T
J
= T
J
max.
V
GD
DC gate voltage not to trigger
0.25
V
Max. required gate trigger / current /
voltage are the lowest value which
will trigger all units 12V anode-to-
cathode applied
Max. gate current / voltage not to
trigger is the max. value which will
not trigger any units with rated V
DRM
anode-to-cathode applied
ST1000C..K Series
4
Bulletin I25202 rev. A 01/00
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ST
100
0
C
26
K
1
1
2
3
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
6
-
K = Puk Case A-24 (K-PUK)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection)
L
= 1000V/sec (Special selection)
4
Device Code
5
6
7
Parameter
ST1000C..K
Units Conditions
Thermal and Mechanical Specifications
8
Ordering Information Table
R
thJC
Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Sinusoidal conduction
Rectangular conduction
Single Side
Double Side
Single Side
Double Side
Conduction angle
Units
Conditions
180
0.003
0.003
0.002
0.002
120
0.004
0.004
0.004
0.004
90
0.005
0.005
0.005
0.005
K/W
T
J
= T
J
max.
60
0.007
0.007
0.007
0.007
30
0.012
0.012
0.012
0.012
T
J
Max. junction operating temperature range
- 40 to 125
C
T
stg
Max. storage temperature range
- 40 to 150
R
thJ-hs
Max. thermal resistance, junction to
0.042
K/W
DC operation single side cooled
heatsink
0.021
DC operation double side cooled
R
thC-hs
Max. thermal resistance, case to
0.006
K/W
DC operation single side cooled
heatsink
0.003
DC operation double side cooled
F
Mounting force, 10%
24500
N
(2500)
(Kg)
wt
Approximate weight
425
g
Case style
A-24 (K-PUK)
See outline table
ST1000C..K Series
5
Bulletin I25202 rev. A 01/00
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Outline Table
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
1 (0.04) MIN.
TWO PLACES
47.5 (1.87) DIA. MAX.
74.5 (2.9) DIA. MAX.
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
4.75 (0.2) NOM.
27.5 (1.08) MAX.
20 5
44 (1.73)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
67 (2.6) DIA. MAX.
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0
30
60
90
1 2 0
1 8 0
Conduction Angle
S T 1 0 0 0 C . . K S e r i e s
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
D C
30
60
90
1 2 0
1 8 0
Conduction Period
S T 1 0 0 0 C . . K S e r i e s
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
ST1000C..KSeries
6
www.irf.com
Bulletin I25202 rev. A 01/00
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
40
50
60
70
80
90
100
110
120
130
0
400
800
1200
1600
30
60
90
120
180
Conduction Angle
ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
40
50
60
70
80
90
100
110
120
130
0
400
800 1200 1600 2000 2400
DC
30
60
90
120
180
Conduction Period
ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
0
500
1000
1500
2000
2500
3000
0
400
800
1200
1600
RMS Limit
Conduction Angle
180
120
90
60
30
ST1000C..K Series
T = 125C
J
0
500
1000
1500
2000
2500
3000
3500
4000
0
500
1000
1500
2000
2500
DC
180
120
90
60
30
RMS Limit
Conduction Period
ST1000C..K Series
T = 125C
J
6000
8000
10000
12000
14000
16000
18000
1
10
100
ST1000C..K Series
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
6000
8000
10000
12000
14000
16000
18000
20000
22000
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST1000C..K Series
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST1000C..K Series
7
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Bulletin I25202 rev. A 01/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJ-hs
(K/W)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
100
1000
10000
0.5
1
1.5
2
2.5
3
3.5
4
T = 25C
J
ST1000C..K Series
T = 125C
J
0.001
0.01
0.1
0.001
0.01
0.1
1
10
100
Steady State Value
R = 0.42 K/W
(Single Side Cooled)
R = 0.21 K/W
(Double Side Cooled)
(DC Operation)
ST1000C..K Series
thJ-hs
thJ-hs
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
j
=
25
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
(1)
(2) (3)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
Device: ST100C..K Series
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