1650A
PHASE CONTROL THYRISTORS
Hockey Puk Version
ST1200C..K SERIES
1
Bulletin I25196 rev. B 01/00
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Features
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
1650
A
@ T
hs
55
C
I
T(RMS)
3080
A
@ T
hs
25
C
I
TSM
@
50Hz
30500
A
@ 60Hz
32000
A
I
2
t
@
50Hz
4651
KA
2
s
@ 60Hz
4250
KA
2
s
V
DRM
/V
RRM
1200 to 2000
V
t
q
typical
200
s
T
J
- 40 to 125
C
Parameters
ST1200C..K
Units
Major Ratings and Characteristics
case style A-24 (K-PUK)
ST1200C..K Series
2
Bulletin I25196 rev.B 01/00
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Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
20
2000
2100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
1650 (700)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
3080
DC @ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
30500
t = 10ms
No voltage
non-repetitive surge current
32000
A
t = 8.3ms
reapplied
25700
t = 10ms
100% V
RRM
26900
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
4651
t = 10ms
No voltage
Initial T
J
= T
J
max.
4250
t = 8.3ms
reapplied
3300
t = 10ms
100% V
RRM
3000
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
46510
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO) 1
Low level value of threshold
voltage
V
T(TO) 2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.73
V
I
pk
= 4000A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.91
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.21
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.19
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST1200C..K
Units Conditions
1.01
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25C, anode supply 12V resistive load
ST1200C..K
100
ST1200C..K Series
3
Bulletin I25196 rev.B 01/00
www.irf.com
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST1200C..K
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.9
t
q
Typical turn-off time
200
s
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST1200C..K
Units Conditions
100
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
16
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
3
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40C
mA
T
J
= 25C
T
J
= 125C
T
J
= - 40C
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST1200C..K
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
1.4
-
1.1
3.0
0.9
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
ST1200C..K Series
4
Bulletin I25196 rev.B 01/00
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T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.042
DC operation single side cooled
junction to heatsink
0.021
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.006
DC operation single side cooled
case to heatsink
0.003
DC operation double side cooled
F
Mounting force, 10%
24500
N
(2500)
(Kg)
wt
Approximate weight
425
g
Parameter
ST1200C..K
Units
Conditions
K/W
C
Case style
A-24 (K-PUK)
See Outline Table
K/W
Thermal and Mechanical Specification
Single Side Double Side
Single Side Double Side
180
0.003
0.003
0.002
0.002
T
J
= T
J
max.
120
0.004
0.004
0.004
0.004
90
0.005
0.005
0.005
0.005
K/W
60
0.007
0.007
0.007
0.007
30
0.012
0.012
0.012
0.012
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
K = Puk Case A-24 (K-PUK)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection)
L
= 1000V/sec (Special selection)
Ordering Information Table
Device Code
5
1
2
3
4
ST 120
0
C
20
K
1
7
6
8
ST1200C..K Series
5
Bulletin I25196 rev.B 01/00
www.irf.com
Outline Table
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
1 (0.04) MIN.
TWO PLACES
47.5 (1.87) DIA. MAX.
74.
5 (
2
.
9
)
D
I
A.
M
A
X.
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
4.75 (0.2) NOM.
2
7
.
5
(1
.
08)
M
A
X
.
20 5
44 (1.73)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
67 (2.6) DIA. MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0 0
4 0 0
6 0 0
8 0 0 1 0 0 0 1 2 0 0
30
60
90
1 2 0
1 8 0
Conduction Angle
S T 1 2 0 0 C . . K S e r i e s
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
D C
30
60
90
1 2 0
1 8 0
Conduction Period
S T 1 2 0 0 C . . K S e r i e s
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
ST1200C..K Series
6
Bulletin I25196 rev. B 01/00
www.irf.com
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
30
60
90
1 2 0
1 8 0
Conduction Angle
S T 1 2 0 0 C . . K S e r i e s
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
6 0 0 1 2 0 0 1 8 0 0 2 4 0 0 3 0 0 0 3 6 0 0
D C
30
60
90
1 2 0
1 8 0
Conduction Period
S T 1 2 0 0 C . . K S e r i e s
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
2 5 0 0
3 0 0 0
3 5 0 0
4 0 0 0
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
1 8 0
1 2 0
90
60
30
RMS Limit
Conduction Angle
S T 1 2 0 0 C . . K S e r i e s
T = 125C
J
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
5 0 0 0
0
6 0 0 1 2 0 0 1 8 0 0 2 4 0 0 3 0 0 0 3 6 0 0
D C
1 8 0
1 2 0
90
60
30
RMS Limit
Conduction Period
S T 1 2 0 0 C . . K S e r i e s
T = 125C
J
1 2 0 0 0
1 4 0 0 0
1 6 0 0 0
1 8 0 0 0
2 0 0 0 0
2 2 0 0 0
2 4 0 0 0
2 6 0 0 0
2 8 0 0 0
1
1 0
1 0 0
Initial T = 125C
@ 6 0 H z 0 . 0 0 8 3 s
@ 5 0 H z 0 . 0 1 0 0 s
J
A t A n y R a t e d L o a d C o n d i t i o n A n d W i t h
R a t e d V A p p l i e d F o l l o w i n g S u r g e .
R R M
S T 1 2 0 0 C . . K S e r i e s
1 2 0 0 0
1 4 0 0 0
1 6 0 0 0
1 8 0 0 0
2 0 0 0 0
2 2 0 0 0
2 4 0 0 0
2 6 0 0 0
2 8 0 0 0
3 0 0 0 0
3 2 0 0 0
0.01
0.1
1
V e r s u s P u l s e T r a i n D u r a t i o n . C o n t r o l
M a x i m u m N o n R e p e t i t i v e S u r g e C u r r e n t
Initial T = 125C
N o V o l t a g e R e a p p l i e d
R a t e d V R e a p p l i e d
J
R R M
O f C o n d u c t i o n M a y N o t B e M a i n t a i n e d .
S T 1 2 0 0 C . . K S e r i e s
ST1200C..K Series
7
Bulletin I25196 rev. B 01/00
www.irf.com
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
1 0 0
1 0 0 0
1 0 0 0 0
0.5
1
1.5
2
2.5
3
T = 25C
J
T = 125C
J
S T 1 2 0 0 C . . K S e r i e s
0 . 0 0 1
0.01
0.1
0.001
0.01
0.1
1
1 0
Steady State Value
R = 0.042 K/W
(Single Side Cooled)
R = 0.021 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
S T 1 2 0 0 C . . K S e r i e s
0.1
1
1 0
1 0 0
0.001
0.01
0.1
1
1 0
1 0 0
V G D
IG D
( b )
(a )
Tj
=
2
5
C
T
j
=
1
25
C
T
j
=
-
40
C
(2)
a ) R e c o m m e n d e d l o a d l i n e f o r
b ) R e c o m m e n d e d l o a d l i n e f o r
< = 3 0 % r a t e d d i / d t : 1 0 V , 1 0 o h m s
F r e q u e n c y L i m i t e d b y P G ( A V )
r a t e d d i / d t : 2 0 V , 1 0 o h m s ; t r < = 1 s
tr<=1 s
R e c t a n g u l a r g a t e p u l s e
(3)
(1)
( 1 ) P G M = 1 0 W , t p = 4 m s
( 2 ) P G M = 2 0 W , t p = 2 m s
( 3 ) P G M = 4 0 W , t p = 1 m s
D e v i c e : S T 1 2 0 0 C . . K S e r i e s
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