350A
PHASE CONTROL THYRISTORS
Hockey Puk Version
ST180C..C SERIES
1
Bulletin I25164 rev. C 02/00
www.irf.com
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
350
A
@ T
hs
55
C
I
T(RMS)
660
A
@ T
hs
25
C
I
TSM
@
50Hz
5000
A
@ 60Hz
5230
A
I
2
t
@
50Hz
125
KA
2
s
@ 60Hz
114
KA
2
s
V
DRM
/V
RRM
400 to 2000
V
t
q
typical
100
s
T
J
- 40 to 125
C
Parameters
ST180C..C
Units
Major Ratings and Characteristics
case style TO-200AB (A-PUK)
ST180C..C Series
2
Bulletin I25164 rev. C 02/00
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
ST180C..C
30
I
T(AV)
Max. average on-state current
350 (140)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
660
@ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
5000
t = 10ms
No voltage
non-repetitive surge current
5230
A
t = 8.3ms
reapplied
4200
t = 10ms
100% V
RRM
4400
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
125
t = 10ms
No voltage
Initial T
J
= T
J
max.
114
t = 8.3ms
reapplied
88
t = 10ms
100% V
RRM
81
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
1250
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.96
V
I
pk
= 750A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Max. (typical) latching current
1000 (300)
1.08
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.18
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.14
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST180C..C
Units Conditions
1.14
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= T
J
max, anode supply 12V resistive load
ST180C..C Series
3
Bulletin I25164 rev. C 02/00
www.irf.com
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 300A, T
J
= T
J
max, di/dt
= 20A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST180C..C
Units Conditions
t
d
Typical delay time
1.0
Switching
t
q
Typical turn-off time
100
s
1000
A/s
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
s
T
J
= T
J
max linear to 80% rated V
DRM
Parameter
ST180C..C
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40C
mA
T
J
= 25C
T
J
= 125C
T
J
= - 40C
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST180C..C
Units Conditions
20
5.0
Triggering
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
ST180C..C Series
4
Bulletin I25164 rev. C 02/00
www.irf.com
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.17
DC operation single side cooled
junction to heatsink
0.08
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.033
DC operation single side cooled
case to heatsink
0.017
DC operation double side cooled
F
Mounting force, 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Parameter
ST180C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
C
Case style
TO - 200AB (A-PUK)
See Outline Table
K/W
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Single Side Double Side
Single Side
Double Side
180
0.015
0.015
0.011
0.011
T
J
= T
J
max.
120
0.018
0.019
0.019
0.019
90
0.024
0.024
0.026
0.026
K/W
60
0.035
0.035
0.036
0.037
30
0.060
0.060
0.060
0.061
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
C = Puk Case TO-200AB (A-PUK)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard value)
L
= 1000V/sec (Special selection)
Ordering Information Table
Device Code
5
1
2
3
4
ST
18
0
C
20
C
1
7
6
8
ST180C..C Series
5
Bulletin I25164 rev. C 02/00
www.irf.com
Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25 5
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
40
50
60
70
80
90
100
110
120
130
0
50
100
150
200
250
30
60
90
120
180
Conduction Angle
ST180C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (C)
20
30
40
50
60
70
80
90
100
110
120
130
0
100
200
300
400
DC
30
60
90
120
180
Conduction Period
ST180C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
ST180C..C Series
6
www.irf.com
Bulletin I25164 rev. C 02/00
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
Average On-state Current (A)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Heatsink Temperature (
C)
20
30
40
50
60
70
80
90
100
110
120
130
0
50 100 150 200 250 300 350 400 450
30
60
90
120
180
Conduction Angle
ST180C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0
100 200 300 400 500 600 700
DC
30
60
90
120
180
Conduction Period
ST180C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
0
100
200
300
400
500
600
700
800
900
1000
0
50 100 150 200 250 300 350 400 450
180
120
90
60
30
RMS Limit
Conduction Angle
ST180C..C Series
T = 125C
J
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
0
100 200 300 400 500 600 700
DC
180
120
90
60
30
RMS Limit
Conduction Period
ST180C..C Series
T = 125C
J
2000
2500
3000
3500
4000
4500
1
10
100
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST180C..C Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
0.01
0.1
1
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST180C..C Series
Maximum Non Repetitive Surge Current
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST180C..C Series
7
www.irf.com
Bulletin I25164 rev. C 02/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
100
1000
10000
1
2
3
4
5
6
T = 25C
J
T = 125C
J
ST180C..C Series
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
ST180C..C Series
Steady State Value
R = 0.17 K/W
(Single Side Cooled)
R = 0.08 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
j
=25
C
Tj
=1
25
C
T
j
=-
40
C
(1)
(2)
(3)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST180C..C Series
Rectangular gate pulse
(4)
PDF 
ZIP