Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
200
A
@ T
C
85
C
I
T(RMS)
314
A
I
TSM
@
50Hz
5000
A
@ 60Hz
5230
A
I
2
t
@
50Hz
125
KA
2
s
@ 60Hz
114
KA
2
s
V
DRM
/V
RRM
400 to 2000
V
t
q
typical
100
s
T
J
- 40 to 125
C
Parameters
ST180S
Units
Major Ratings and Characteristics
case style
TO-209AB (TO-93)
200A
PHASE CONTROL THYRISTORS
Stud Version
ST180S SERIES
1
Bulletin I25165 rev. C 03/03
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ST180S Series
2
Bulletin I25165 rev. C 03/03
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
ST180S
30
I
T(AV)
Max. average on-state current
200
A
180 conduction, half sine wave
@ Case temperature
85
C
I
T(RMS)
Max. RMS on-state current
314
A
DC @ 76C case temperature
I
TSM
Max. peak, one-cycle
5000
t = 10ms
No voltage
non-repetitive surge current
5230
t = 8.3ms
reapplied
4200
t = 10ms
100% V
RRM
4400
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
125
t = 10ms
No voltage
Initial T
J
= T
J
max.
114
t = 8.3ms
reapplied
88
t = 10ms
100% V
RRM
81
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
1250
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.75
V
I
pk
= 570A, T
J
= 125C, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Max. (typical) latching current
1000 (300)
1.08
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.18
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.14
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST180S
Units Conditions
1.14
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= T
J
max, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 300A, T
J
= T
J
max, di/dt
= 20A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
,
t
p
= 500s
Parameter
ST180S
Units Conditions
t
d
Typical delay time
1.0
Switching
t
q
Typical turn-off time
100
s
1000
A/s
ST180S Series
3
Bulletin I25165 rev. C 03/03
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/s
T
J
= T
J
max linear to 80% rated V
DRM
Parameter
ST180S
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40C
to trigger
mA
T
J
= 25C
T
J
= 125C
V
GT
DC gate voltage required
T
J
= - 40C
to trigger
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST180S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
5ms
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, 10%
31
(275)
24.5
(210)
wt
Approximate weight
280
g
Case style
TO - 209AB (TO-93)
See Outline Table
Parameter
ST180S
Units Conditions
0.105
DC operation
0.04
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
C
K/W
Nm
(lbf-in)
Lubricated threads
Non lubricated threads
ST180S Series
4
Bulletin I25165 rev. C 03/03
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R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180
0.015
0.012
T
J
= T
J
max.
120
0.019
0.020
90
0.025
0.027
K/W
60
0.036
0.037
30
0.060
0.060
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
Ordering Information Table
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding Stud
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
P = Stud base 3/4"-16UNF2A threads
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
8
-
V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
NOTE: For Metric device M16 x 1.5 Contact factory
Device Code
5
1
2
3
4
ST 18
0
S
20
P
0
7
6
8
ST180S Series
5
Bulletin I25165 rev. C 03/03
www.irf.com
Fast-on Terminals
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
Outline Table
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (
8
.
2
6)
10
(
0
.
3
9)
C.S. 0.4mm
(0.0006 s.i.)
MA
X
.
90 (
3
.
5
4
)
M
I
N
.
4.3 (0.17) DIA.
19 (0.75) MAX.
3
8
.5
(
1
.
5
2
)
MA
X
.
16
(
0
.
6
3
)
M
A
X
.
8.5 (0.33) DIA.
+-
GLASS METAL SEAL
28.5 (1.12) MAX. DIA.
220 (8.66) 10 (0.39)
SW 32
C.S. 25mm 2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22
(0
.8
6)
M
IN
.
35 (1.38) MAX.
3/4"-16UNF-2A *
27
.
5
(
1
.
0
8)
9.
5
(0
.3
7)
M
IN
.
WHITE GATE
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
21
0 (
8
.26
)
10
(
0
.
3
9)
C.S. 0.4mm
(0.0006 s.i.)
38.
5 (
1
.
52)
MA
X
.
+-
220 (8.66) 10 (0.39)
CERAMIC HOUSING
90
(
3
.
5
4)
M
I
N
.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
C.S. 25mm 2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22
(0
.8
6)
M
IN
.
MA
X
.
35 (1.38) MAX.
3/4"-16UNF-2A *
2
7
.
5
(
1
.0
8
)
SW 32
27.5 (1.08) MAX. DIA.
WHITE GATE
9.
5
(0
.3
7)
M
IN
.
16
(
0
.
6
3)
M
A
X
.
AMP. 280000-1
REF-250
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
ST180S Series
6
Bulletin I25165 rev. C 03/03
www.irf.com
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
80
90
100
110
120
130
0
40
80
120
160
200
240
M
a
x
i
mu
m A
l
l
o
w
a
bl
e
C
a
s
e
T
e
m
p
e
r
at
u
r
e
(
C
)
30
60
90
120
180
Average On-state Current (A)
Conduc tion Angle
ST180S Series
R (DC) = 0.105 K/ W
thJC
70
80
90
100
110
120
130
0
50
100 150 200 250 300 350
DC
30
60
90
120 180
Average On-state Current (A)
Ma
x
i
m
u
m
A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduc tion Period
ST180S Series
R (DC) = 0.105 K/ W
thJC
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0.
08
K
/W
- D
elt
a R
th
SA
0.1
K/
W
0.1
6 K
/W
0.2
K/W
0.3 K
/ W
0.4 K
/W
0.5 K
/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
0
40
80
120
160
200
240
180
120
90
60
30
RMS Limit
Conduc tion Angle
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
wer
L
o
s
s
(
W
)
Average On-state Current (A)
ST180S Series
T = 125C
J
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0.0
8 K
/ W
- D
elta
R
thS
A
0.1
K/
W
0.1
6 K
/W
0.2 K
/ W
0.3 K
/ W
0.4 K/
W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
400
450
500
0
40
80 120 160 200 240 280 320
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
m
u
m
A
v
er
a
g
e
O
n
-
s
t
a
te P
o
we
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST180S Series
T = 125C
J
ST180S Series
7
Bulletin I25165 rev. C 03/03
www.irf.com
2000
2400
2800
3200
3600
4000
4400
4800
1
10
100
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Pe
a
k
H
a
l
f
S
in
e
W
a
ve
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST180S Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
2000
2500
3000
3500
4000
4500
5000
5500
0.01
0.1
1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Pe
a
k
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
ta
te Cu
r
r
e
n
t
(
A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST180S Series
Maximum Non Repetitive Surge Current
Of Conduc tion May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T = 25C
J
I
n
s
t
an
t
a
ne
ou
s
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Instantaneous On-state Voltage (V)
T = 125C
J
ST180S Series
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
r
an
s
i
e
n
t T
h
e
r
m
a
l
I
m
p
e
d
anc
e
Z
(
K
/
W
)
ST180S Series
Steady State Value
R = 0.105 K/ W
(DC Operation)
thJC
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
ST180S Series
8
Bulletin I25165 rev. C 03/03
www.irf.com
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
C
T
j
=
125
C
T
j
=
-
40
C
(1) (2)
(3)
Instantaneous Gate Current (A)
I
n
st
a
n
t
a
n
e
o
u
s G
a
t
e
V
o
l
t
a
g
e
(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST180S Series
(4)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
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