Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
I
T(AV)
195
A
@ T
C
85
C
I
T(RMS)
306
A
I
TSM
@
50Hz
4900
A
@ 60Hz
5130
A
I
2
t
@
50Hz
120
KA
2
s
@ 60Hz
110
KA
2
s
V
DRM
/V
RRM
400 to 800
V
t
q
15 - 20
s
T
J
- 40 to 125
C
Parameters
ST183S
Units
Major Ratings and Characteristics
case style
TO-209AB (TO-93)
ST183S SERIES
INVERTER GRADE THYRISTORS
Stud Version
195A
1
Bulletin I25179 rev. D 03/03
www.irf.com
ST183S Series
2
Bulletin I25179 rev. D 03/03
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Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
570
370
900
610
7040
5220
400Hz
560
360
940
630
3200
2280
1000Hz
500
300
925
610
1780
1200
A
2500Hz
340
190
760
490
880
560
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Case temperature
60
85
60
85
60
85
C
Equivalent values for RC circuit
47
/ 0.22F
47
/ 0.22F
47
/ 0.22F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
195
A
180 conduction, half sine wave
@ Case temperature
85
C
I
T(RMS)
Max. RMS on-state current
306
DC @ 74C case temperature
I
TSM
Max. peak, one half cycle,
4900
t = 10ms
No voltage
non-repetitive surge current
5130
A
t = 8.3ms
reapplied
4120
t = 10ms
100% V
RRM
4310
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
120
t = 10ms
No voltage
Initial T
J
= T
J
max
110
t = 8.3ms
reapplied
85
t = 10ms
100% V
RRM
78
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
1200
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST183S
Units Conditions
On-state Conduction
KA
2
s
ST183S
40
ST183S Series
3
Bulletin I25179 rev. D 03/03
www.irf.com
V
TM
Max. peak on-state voltage
1.80
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Parameter
ST183S
Units
Conditions
On-state Conduction
1.40
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.45
(I >
x I
T(AV)
), T
J
= T
J
max.
V
0.67
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.58
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 300A, commutating di/dt
= 20A/s
V
R
= 50V, t
p
= 500s, dv/dt = 200V/s
Switching
Parameter
ST183S
Units
Conditions
1000
A/s
t
d
Typical delay time
1.1
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max., linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST183S
Units
Conditions
Blocking
500
V/
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST183S
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= T
J
max, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
15
20
s
W
T
J
= T
J
max, f = 50Hz, d% = 50
ST183S Series
4
Bulletin I25179 rev. D 03/03
www.irf.com
Ordering Information Table
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- S = Compression bonding Stud
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
- P = Stud base 3/4" 16UNF-2A
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
NOTE: For Metric device M16 x 1.5 Contact Factory
T
J
Max. junction operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance, junction to case
0.105
DC operation
R
thCS
Max. thermal resistance, case to heatsink
0.04
Mounting surface, smooth, flat and greased
T
Mounting torque, 10%
31
Nm
(275)
(Ibf-in)
24.5
Nm
(210)
(Ibf-in)
wt
Approximate weight
280
g
Case style
TO-209AB (TO-93)
See Outline Table
Parameter
ST183S
Units
Conditions
Thermal and Mechanical Specifications
C
K/W
Non lubricated threads
5
6
8
9
ST
18
3
S
08
P
F
K
0
3
4
7
Device Code
1
2
Lubricated threads
180
0.016
0.012
120
0.019
0.020
90
0.025
0.027
K/W
T
J
= T
J
max.
60
0.036
0.037
30
0.060
0.060
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
dv/dt - t
q
combinations available
dv/dt (V/s)
200
t
q
(s)
15
FL
20
FK
ST183S Series
5
Bulletin I25179 rev. D 03/03
www.irf.com
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
Fast-on Terminals
Outline Table
AMP. 280000-1
REF-250
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (
8
.
26)
10 (
0
.
39)
C.S. 0.4mm
(0.0006 s.i.)
38.
5 (
1
.
52)
MA
X
.
+-
220 (8.66) 10 (0.39)
CERAMIC HOUSING
90 (
3
.
54)
M
I
N
.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
C.S. 25mm 2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22
(0
.8
6)
M
IN
.
MA
X
.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.
5 (
1
.
08)
SW 32
27.5 (1.08) MAX. DIA.
WHITE GATE
9.5
(0
.3
7)
M
IN
.
16 (
0
.
63)
M
A
X
.
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180 200
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
Ca
s
e
T
em
pe
r
a
t
u
r
e
(
C
)
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
ST183S Series
R (DC) = 0.105 K/ W
thJC
70
80
90
100
110
120
130
0
50
100 150 200 250 300 350
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
Ca
s
e
T
e
mp
e
r
a
t
u
r
e
(
C)
Conduction Period
ST183S Series
R (DC) = 0.105 K/ W
thJC
ST183S Series
6
Bulletin I25179 rev. D 03/03
www.irf.com
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0
.0
8 K
/W
- D
elt
a
R
th
SA
0.1
K
/W
0.1
6 K/
W
0.2
K/
W
0.3 K
/ W
0.4 K
/ W
0.5 K
/ W
0.8 K/W
1.2 K/ W
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140 160 180 200
180
120
90
60
30
RMS Limit
Conduc tion Angle
M
a
x
i
mu
m A
v
e
r
ag
e O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST183S Series
T = 125C
J
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0.0
8 K
/W
- D
elta
R
thS
A
0.1
K/W
0.1
6 K
/W
0.2 K
/ W
0.3 K
/ W
0.4 K/
W
0.5 K/W
0.8 K/W
1.2 K/ W
0
50
100
150
200
250
300
350
400
450
500
0
50
100 150 200 250 300 350
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
we
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST183S Series
T = 125C
J
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
2000
2500
3000
3500
4000
4500
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Pe
a
k
H
a
l
f
S
in
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST183S Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
0.01
0.1
1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
ta
te C
u
r
r
e
n
t
(
A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST183S Series
ST183S Series
7
Bulletin I25179 rev. D 03/03
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
100
1000
10000
1
1.5
2
2.5
3
3.5
4
T = 25C
I
n
st
a
n
t
a
n
e
o
u
s O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Instantaneous On-state Voltage (V)
T = 125C
J
ST183S Series
J
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
Steady State Value
R = 0.105 K/ W
(DC Operation)
thJC
ST183S Series
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
I = 500 A
300 A
200 A
100 A
50 A
M
a
x
i
m
u
m
Re
v
e
r
s
e
Re
c
o
v
e
r
y
C
u
r
r
e
n
t
-
I
r
r
(
A
)
ST183S Series
T = 125 C
J
TM
0
50
100
150
200
250
0
20
40
60
80
100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
I = 500 A
300 A
200 A
100 A
50 A
M
a
x
i
mu
m R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
C
h
a
r
g
e
-
Q
r
r
(
C
)
ST183S Series
T = 125 C
J
TM
Fig. 11 - Frequency Characteristics
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
1000
1500
3000
200
500
Snubber circuit
R = 47 ohms
C = 0.22 F
V = 80% V
s
s
D
DRM
5000
ST183S Series
Sinusoidal pulse
T = 85C
C
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
P
e
a
k
O
n
-
s
ta
t
e
C
u
r
r
e
n
t (
A
)
1000
1500
3000
200
500
Snub ber circuit
R = 47 ohms
C = 0.22 F
V = 80% V
s
s
D
DRM
5000
ST183S Series
Sinusoidal pulse
T = 60C
C
1E4
tp
ST183S Series
8
Bulletin I25179 rev. D 03/03
www.irf.com
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 12 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
100
1000
1500
200
Pulse Basewidth (s)
P
e
a
k
O
n
-s
t
a
t
e
C
u
rr
e
n
t
(
A
)
5000
2500
Snub ber c ircuit
R = 47 ohms
C = 0.22 F
V = 80% V
s
s
D
DRM
ST183S Series
Tra pezoidal pulse
T = 60C
di/dt = 50A/s
C
1E4
500
3000
10000
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
1000
1500
200
Pulse Basewidth (s)
P
e
a
k
O
n
-
s
ta
te
Cu
r
r
en
t (
A
)
5000
Snub ber c ircuit
R = 47 ohms
C = 0.22 F
V = 80% V
s
s
D
DRM
ST183S Series
Tra pezoidal pulse
T = 60C
di/d t = 100A/ s
C
tp
1E4
10000
500
3000
1E1
1E2
1E3
1E4
50 Hz
400
100
1000
1500
200
Pulse Basewidth (s)
5000
2500
Snubber circuit
R = 47 ohms
C = 0.22 F
V = 80% V
s
s
D
DRM
ST183S Series
Trapezoidal pulse
T = 85C
di/d t = 50A/s
C
500
3000
10000
1E1
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
1000
1500
200
Pulse Basewidth (s)
5000
Snub ber c ircuit
R = 47 ohms
C = 0.22 F
V = 80% V
s
s
D
DRM
ST183S Series
Trapezoidal pulse
T = 85C
di/d t = 100A/ s
C
tp
10000
500
3000
1E1
1E1
1E2
1E3
1E4
1E5
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules per pulse
2
1
0.5
0.2
0.1
Pe
a
k
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
0.3
10
5
ST183S Series
Sinusoidal pulse
tp
1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules per pulse
2
1
0.5
0.2
0.1
10
5
ST183S Series
Rectangular pulse
di/ dt = 50A/ s
tp
1E1
0.3
ST183S Series
9
Bulletin I25179 rev. D 03/03
www.irf.com
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
(1)
(2)
Instantaneous Gate Current (A)
I
n
s
t
an
ta
n
e
o
u
s
G
a
te
V
o
l
t
a
g
e
(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST183S Series
(4)
Frequency Limited by PG(AV)
Fig. 15 - Gate Characteristics
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
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