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Электронный компонент: ST300S04P3L

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300A
PHASE CONTROL THYRISTORS
Stud Version
ST300S SERIES
1
Bulletin I25158 rev. B 01/94
www.irf.com
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
International standard case TO-209AE (TO-118)
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
300
A
@ T
C
75
C
I
T(RMS)
470
A
I
TSM
@
50Hz
8000
A
@ 60Hz
8380
A
I
2
t
@
50Hz
320
KA
2
s
@ 60Hz
292
KA
2
s
V
DRM
/V
RRM
400 to 2000
V
t
q
typical
100
s
T
J
- 40 to 125
C
Parameters
ST300S
Units
Major Ratings and Characteristics
case style
TO-209AE (TO-118)
ST300S Series
2
Bulletin I25158 rev. B 01/94
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
ST300S
50
I
T(AV)
Max. average on-state current
300
A
180 conduction, half sine wave
@ Case temperature
75
C
I
T(RMS)
Max. RMS on-state current
470
A
DC @ 64C case temperature
I
TSM
Max. peak, one-cycle
8000
t = 10ms
No voltage
non-repetitive surge current
8380
t = 8.3ms
reapplied
6730
t = 10ms
100% V
RRM
7040
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
320
t = 10ms
No voltage
Initial T
J
= T
J
max.
292
t = 8.3ms
reapplied
226
t = 10ms
100% V
RRM
207
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
3200
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of on-state
slope resistance
r
t
2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.66
V
I
pk
= 940A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.97
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.74
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.73
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST300S
Units Conditions
0.98
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
m
mA
T
J
= 25C, anode supply 12V resistive load
V
A
ST300S Series
3
Bulletin I25158 rev. B 01/94
www.irf.com
Parameter
ST300S
Units Conditions
Switching
s
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST300S
Units Conditions
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40C
to trigger
mA
T
J
= 25C
T
J
= 125C
V
GT
DC gate voltage required
T
J
= - 40C
to trigger
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10.0
mA
Parameter
ST300S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3
1.1
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
V
T
J
= T
J
max, t
p
5ms
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
,
t
p
= 500s
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
1000
A/s
ST300S Series
4
Bulletin I25158 rev. B 01/94
www.irf.com
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, 10%
48.5
(425)
wt
Approximate weight
535
g
Case style
TO - 209AE (TO-118)
See Outline Table
Parameter
ST300S
Units
Conditions
0.10
DC operation
0.03
Mounting surface, smooth, flat and greased
C
Thermal and Mechanical Specification
Non lubricated threads
K/W
Nm
(lbf-in)
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180
0.011
0.008
T
J
= T
J
max.
120
0.013
0.014
90
0.017
0.018
K/W
60
0.025
0.026
30
0.041
0.042
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
Ordering Information Table
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding Stud
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
P = Stud base 16UNF threads
M = Stud base metric threads (M24 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
8
-
Critical dv/dt: None = 500V/sec (Standard value)
L
= 1000V/sec (Special selection)
Device Code
5
3
4
ST
30
0
S
20
P
0
7
8
1
2
6
ST300S Series
5
Bulletin I25158 rev. B 01/94
www.irf.com
Fast-on Terminals
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
Outline Table
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
All dimensions in millimeters (inches)
RED CATHODE
RED SILICON RUBBER
10.5 (0.41)
24
5 (
9
.
6
5)

1
0
(
0
.3
9
)
WHITE GATE
4.3 (0.17) DIA.
CERAMIC HOUSING
WHITE SHRINK
NOM.
47
(
1
.
85)
M
AX.
2
45 (
9
.
6
5
)
38 (1.50)
MAX. DIA.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
22 (0.87) MAX.
MA
X
.
21
(
0
.
8
2
)
M
A
X
.
SW 45
2
FLEXIBLE LEAD
4.5 (0.18) MAX.
C.S. 50mm
(0.078 s.i.)
25
5 (
1
0.
04
)
RED SHRINK
22
(
0
.8
6
) M
IN
.
49 (1.92) MAX.
3/4"16 UNF-2A
27.
5 (
1
.
0
8
)
9
.5
(0
.3
7)
M
IN
.
4
7
(
1
.85)
27
.5 (
1
.
08)
77.5
(
3
.
0
5)
80.5
(
3
.
1
7)
38 (1.5)
DIA. MAX.
M
AX.
MA
X
.
M
AX.
CERAMIC HOUSING
SW 45
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
21 (
0
.83)
3/4"-16UNF-2A *
25
(
0
.98)
3/8"-24UNF-2A
17 (0.67) DIA.
AMP. 280000-1
REF-250
ST300S Series
6
Bulletin I25158 rev. B 01/94
www.irf.com
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
0.0
8 K
/W
0.
2 K
/W
0.3
K/W
0.4 K
/W
0. 6 K/W
1.2 K/W
R
=
0
.0
3 K
/W
-
D
e
lta
R
th
SA
0.1
2 K
/W
0
40
80
120
160
200
240
280
320
360
400
440
480
0
40
80
120 160 200 240 280 320
180
120
90
60
30
RMS Limit
Conduction Angle
M
a
x
i
m
u
m A
v
e
r
a
g
e

O
n
-
s
ta
te
P
o
w
e
r

L
o
s
s

(
W
)
Average On-state Current (A)
ST 300S Series
T = 125C
J
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
= 0
.0
3 K
/W
- D
elta
R
th
SA
0.0
8 K
/W
0.1
2 K
/W
0.2
K/W
0.3 K
/W
0. 6 K/W
1.2 K/W
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0
100
200
300
400
500
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
ta
t
e

P
o
w
e
r
L
o
s
s

(
W
)
Average On-state Current (A)
ST300S Series
T = 125C
J
60
70
80
90
100
110
120
130
0
100
200
300
400
500
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
m
u
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e

(
C
)
Conduction Period
ST300S Series
R (DC) = 0.10 K/W
thJC
70
80
90
100
110
120
130
0
50
100
150
200
250
300
350
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e

C
a
s
e
T
e
mp
e
r
a
t
u
r
e

(
C
)
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
ST300S Series
R (DC) = 0.10 K/W
thJC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
ST300S Series
7
Bulletin I25158 rev. B 01/94
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
100
1000
10000
0
1
2
3
4
5
6
7
8
9
T = 25C
J
I
n
s
t
a
n
t
a
n
e
o
u
s
O
n
-
s
ta
te
C
u
r
r
e
n
t (
A
)
Instantaneous On-state Voltage (V)
T = 125C
J
ST300S Series
0. 001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
ST300S Series
Tr
a
n
s
i
e
n
t

Th
e
r
m
a
l
I
m
p
e
d
a
n
c
e

Z

(
K
/
W
)
Steady State Value
R = 0.10 K/W
(DC Operation)
thJC
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
e
a
k

H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
te
C
u
r
r
e
n
t
(
A
)
ST300S Series
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
0.01
0.1
1
Pulse T rain Duration (s)
Versus Pulse Train Duration. Control
P
e
ak

Hal
f
S
i
ne
W
a
v
e
O
n
-
s
t
a
t
e

C
u
r
r
e
n
t

(
A
)
ST300S Series
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
ST300S Series
8
Bulletin I25158 rev. B 01/94
www.irf.com
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
j
=
25
C
T
j
=
125
C
Tj
=
-
4
0
C
(2)
(3)
Instantaneous Gate Current (A)
I
n
st
a
n
t
a
n
e
o
u
s
G
a
t
e
V
o
l
t
a
g
e

(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
Device: ST300S Series
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(4)