IRLR/U2905
HEXFET
Power MOSFET
S
D
G
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.4
R
JA
Case-to-Ambient (PCB mount)**
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.027
I
D
= 42A
Description
12/8/00
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1
D -P ak
T O -252 A A
I-P ak
T O -25 1A A
l
Logic-Level Gate Drive
l
Ultra Low On-Resistance
l
Surface Mount (IRLR2905)
l
Straight Lead (IRLU2905)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
42
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
30
A
I
DM
Pulsed Drain Current
160
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
210
mJ
I
AR
Avalanche Current
25
A
E
AR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
PD- 91334E
IRLR/U2905
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 25A, V
GS
= 0V
t
rr
Reverse Recovery Time
80
120
ns
T
J
= 25C, I
F
= 25A
Q
rr
Reverse RecoveryCharge
210
320
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
42
160
A
V
DD
= 25V, starting T
J
= 25C, L =470H
R
G
= 25
, I
AS
= 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
300s; duty cycle
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRLZ44N data and test conditions.
I
SD
25A, di/dt
270A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.070
V/C
Reference to 25C, I
D
= 1mA
0.027
V
GS
= 10V, I
D
= 25A
0.030
W
V
GS
= 5.0V, I
D
= 25A
0.040
V
GS
= 4.0V, I
D
= 21A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
21
S
V
DS
= 25V, I
D
= 25A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
48
I
D
= 25A
Q
gs
Gate-to-Source Charge
8.6
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
25
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
11
V
DD
= 28V
t
r
Rise Time
84
ns
I
D
= 25A
t
d(off)
Turn-Off Delay Time
26
R
G
= 3.4
,
V
GS
= 5.0V
t
f
Fall Time
15
R
D
= 1.1
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1700
V
GS
= 0V
C
oss
Output Capacitance
400
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
150
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
IRLR/U2905
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
D
V , D ra in-to-S ource V oltage (V )
D S
A
2 0 s P U LS E W ID T H
T = 2 5C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
D
V , D rain-to-S ource V oltage (V )
D S
A
2 0 s P U LS E W ID T H
T = 1 75 C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5 V
J
1
1 0
1 0 0
1 0 0 0
2 . 0
3 . 0
4 . 0
5 . 0
6 . 0
7 . 0
8 . 0
9 . 0
T = 2 5 C
J
G S
V , G ate-to -S ou rce V oltage (V )
D
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 75 C
J
A
V = 2 5V
2 0 s P U L S E W ID TH
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
V = 10 V
G S
A
I = 4 1A
D
IRLR/U2905
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
2 4 0 0
2 8 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0 V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o s s d s g d
C
is s
C
os s
C
rs s
0
3
6
9
1 2
1 5
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
V = 4 4 V
V = 2 8 V
I = 2 5A
D S
D S
D
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
T = 25 C
J
V = 0V
G S
V , S o urc e-to -D ra in V o lta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 1 75 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D rain-to-S ource V oltage (V )
D S
I
,
Dr
ai
n
C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
1 0 s
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
IRLR/U2905
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
0
10
20
30
40
50
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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