DESCRIPTION
2SA1603 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max
Excellent linearity of DC forward gain.
Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
ItshowshFEclassificationinbelowtable.
SMALL-SIGNAL TRANSISTOR
2SA1603
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
OUTLINE DRAWING
Unit
MAXIMUM RATINGS
Ta=25
Symbol
Parameter
Ratings
Unit
V
CBO
Collector to Base voltage
-50
V
V
CEO
Collector to Emitter voltage
-50
V
V
EBO
Emitter to Base voltage
-6
V
I
O
Collector current
-100
mA
P
c
Collector dissipation
150
mW
T
j
Junction temperature
125
T
stg
Storage temperature
-55125
ELECTRICAL CHARACTERISTICS
Ta=25
Limits
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
C to E break down voltage
V(BR)
CEO
I
C
=-100A ,R
BE
=
-50
-
-
V
Collector cut off current
I
CBO
V
CB
=-50V, I
E
=0mA
-
-
-0.5
A
Emitter cut off current
I
EBO
V
EB
=-4V, I
C
=0mA
-
-
-0.5
A
DC forward current gain
hFE
V
CE
=-6V, I
C
=-1mA
120
-
820
DC forward current gain
hFE
V
CE
=-6V, I
C
=-0.1mA
70
-
-
C to E Saturation Vlotage
VCE(sat)
I
C
=-30mA ,I
B
=-1.5mA
-
-
-0.3
V
Gain bandwidth product
fT
V
CE
=-6V, I
E
=10mA
-
200
-
MHz
Collector output capacitance
Cob
V
CB
=-6V, I
E
=0,f=1MHz
-
2.5
-
pF
JEITASC-70
TERMINAL CONNECTER
BASE
EMITTER
COLLECTOR
0.15
0
0.1
0.7
0.9
0.3
0.425
1.25
0.425
2.1
0.65
0.65
1.30
2.0
ISAHAYA ELECTRONICSCORPORATION
Item
Item
120 270
180 390
270 560
390 820
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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