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Электронный компонент: 2SC5636

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DESCRIPTION
FEATURE
APPLICATION
Super mini package for easy mounting.
High gain bandwidth product.
fT=8.0GHz
For TV tuners,high frequency amplifier,celluar phone
system.
High gain,low noise.
Can operate at low voltage.
Mitsubishi 2SC5636 is a super mini package resin sealed
silicon NPN epitaxial transistor.It is designed for high
frequency application.
OUTLINE DRAWING
Unit
:mm
TERMINAL CONNECTOR
1
: BASE
2
: EMITTER
3
: COLLECTOR
JEITA:SC-90
MAXIMUM RATINGS (Ta=25)
V
CBO
I
C
P
C
T
j
T
stg
15
50
+125
-55~+125
V
mA
mW
Symbol
Parameter
Collector to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
Unit
V
EBO
V
Emitter to Base voltage
V
CEO
6
V
Collector to Emitter voltage
100
1.5
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
I
CBO
f
T
C
ob
NF
V
CB
=10V, I
E
=0mA
V
CE
=5V, I
E
=10mA
V
CB
=5V, I
E
=0mA, f =1MHz
V
CE
=5V, I
C
=10mA, f =1GHz
V
CE
=5V, I
C
=5mA, f =1GHz
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
I
EBO
V
EB
=1V, I
C
=0mA
Emitter cut off current
h
FE
V
CE
=5V, I
C
=10mA
DC forward current gain
S
21
2
Collector cut off current
1.0
1.0
50
250
8.0
1.0
9.0
12.0
1.4
A
A
GHz
pF
dB
dB
0.8
0.4
0.4
1.6
1
2
3
5.0
2SC5636
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
SMALL-SIGNAL TRANSISTOR
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DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
GAIN BANDWIDTH PRODUCT
VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
POWER GAIN VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
10.0
100.0
1000.0
0.1
1.0
10.0
100.0
Ta=25
V
CE
=5V
1.0
10.0
1.0
Ta=25
V
CE
=3V
10.0
100.0
POWER GAIN VS. COLLECTOR CURRENT
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
Ta=25
V
CE
=3V
f= 1.0GHz
f= 2.0GHz
1.0
10.0
100.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
Ta=25
V
CE
=1V
f=1.0GHz
f=2.0GHz
1.0
10.0
100.0
2SC5636
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
SMALL-SIGNAL TRANSISTOR
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S PARAMETER
VCE=1V,IC=10mA
FREQUENCY
S
11
S
21
S
12
S
22
VCE=3V,IC=10mA
FREQUENCY
S
11
S
21
S
12
S
22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
0.462
-121.3
6.597
102.5
0.087
48.1
0.352
-84.5
600
0.440
-131.7
5.854
97.0
0.094
48.9
0.320
-87.7
700
0.434
-143.9
5.029
91.8
0.102
48.7
0.278
-100.6
800
0.423
-149.9
4.569
88.0
0.109
49.7
0.254
-101.8
900
0.413
-155.5
4.031
84.1
0.117
51.0
0.233
-107.1
1000
0.407
-159.7
3.685
82.1
0.124
51.3
0.220
-109.7
1100
0.407
-164.6
3.367
78.5
0.133
51.8
0.211
-114.9
1200
0.397
-167.5
3.141
76.4
0.140
52.3
0.201
-116.5
1300
0.395
-171.3
2.880
73.7
0.150
52.8
0.192
-120.3
1400
0.393
-173.3
2.712
72.2
0.157
53.0
0.187
-122.0
1500
0.389
-175.7
2.574
69.9
0.164
53.2
0.181
-122.4
1600
0.392
-179.0
2.435
67.0
0.173
53.2
0.176
-124.9
1700
0.384
179.1
2.307
65.3
0.180
53.0
0.178
-126.3
1800
0.386
177.0
2.178
63.8
0.189
52.8
0.174
-128.4
1900
0.383
174.5
2.089
61.8
0.197
52.8
0.175
-130.4
2000
0.379
173.1
2.011
60.4
0.204
52.4
0.177
-131.1
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
0.473
-102.1
7.745
108.2
0.076
52.4
0.420
-60.1
600
0.434
-113.7
6.955
102.1
0.082
53.1
0.389
-62.1
700
0.410
-127.8
6.038
95.9
0.089
52.5
0.325
-69.8
800
0.391
-134.7
5.488
92.5
0.096
53.4
0.302
-69.2
900
0.375
-141.5
4.872
87.9
0.104
54.4
0.273
-71.5
1000
0.365
-146.5
4.457
85.6
0.110
54.7
0.258
-71.7
1100
0.361
-152.6
4.073
82.1
0.118
55.1
0.242
-74.8
1200
0.350
-155.8
3.805
79.7
0.125
55.7
0.232
-74.9
1300
0.345
-160.2
3.486
77.1
0.133
56.0
0.219
-76.7
1400
0.342
-162.7
3.279
75.5
0.140
56.1
0.213
-77.0
1500
0.337
-165.4
3.106
73.8
0.147
56.4
0.211
-77.1
1600
0.337
-169.4
2.928
70.3
0.155
56.2
0.205
-78.4
1700
0.330
-171.3
2.772
69.2
0.161
56.2
0.205
-79.9
1800
0.332
-174.0
2.617
67.0
0.170
56.3
0.198
-80.6
1900
0.328
-176.5
2.511
65.2
0.176
56.0
0.197
-82.2
2000
0.325
-178.4
2.413
63.4
0.184
55.6
0.200
-84.2
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
0.483
-94.6
8.003
110.1
0.071
54.4
0.458
-52.0
600
0.436
-106.1
7.231
104.2
0.077
54.8
0.428
-52.8
700
0.405
-120.3
6.321
97.7
0.085
54.0
0.360
-59.2
800
0.381
-127.6
5.738
94.0
0.091
54.8
0.340
-58.2
900
0.361
-134.6
5.103
89.6
0.099
55.8
0.312
-59.8
1000
0.349
-139.9
4.683
87.0
0.104
56.3
0.297
-59.2
1100
0.342
-146.3
4.290
83.4
0.112
56.5
0.280
-61.4
1200
0.330
-149.6
3.990
81.2
0.119
57.0
0.270
-61.6
1300
0.323
-154.5
3.669
78.4
0.126
57.5
0.256
-61.7
1400
0.321
-157.2
3.455
76.2
0.133
57.4
0.254
-62.9
1500
0.314
-160.0
3.273
74.3
0.140
57.6
0.252
-62.7
1600
0.313
-164.3
3.086
71.2
0.147
57.8
0.245
-63.3
1700
0.305
-166.2
2.915
70.4
0.153
57.4
0.244
-65.4
1800
0.308
-169.1
2.765
67.9
0.162
57.4
0.240
-66.2
1900
0.304
-171.9
2.648
65.9
0.169
57.3
0.237
-67.3
2000
0.299
-173.6
2.538
64.7
0.175
57.0
0.239
-69.1
VCE=5V,IC=10mA
FREQUENCY
S
11
S
21
S
12
S
22
2SC5636
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
SMALL-SIGNAL TRANSISTOR
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