DESCRIPTION
2SC5807 is a silicon NPN epitaxial Transistor.
It designed with high collector current and high collector dissipation.
FEATURE
High collector current I
C
=5A
Small collector to Emitter saturation voltage
V
CE(sat)
=0.25V TYP. (@I
C
=4A,I
B
=100mA)
High collector dissipation P
C
=500mW
APPLICATION
For storobe ,DC/DC convertor,power amplify apprication
Transistor
DEVELOPING
2SC5807
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING Unit
Note)
The dimension without tolerance represent central value.
MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
RATINGS
UNIT
V
CBO
Collector to Base voltage
50
V
V
EBO
Emitter to Base voltage
6
V
V
CEO
Collector to Emitter voltage
20
V
I
C
Collector current
5
I
CM
Peak Collecter current*1
10
A
Collector dissipation (TotalTa=25)
0.5
P
C
Collector dissipation (TotalTa=25)*2
2
W
T
j
Junction temperature
150
T
stg
Storage temperature
-55150
*1Single PulsePw=10msec
*2Pakkage mounted on 35mm
50mm0.8mm ceramic board.
MARKING
TYPE NAME
LOT No.
ITEM
TERMINAL CONNECTER
: EMITTER
: COLLECTOR
: BASE
EIAJ : SC-62
JEDEC :
4.2 MAX
E
C
B
4.6 MAX
1.6
2.5
3.0
1.5
0.53
MAX
0.48 MAX
0.8 MIN
1.5
0.4
MARKING
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Transistor
DEVELOPING
2SC5807
For strobe,DC/DC convertor Application
Silicon NPN Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25)
LIMITS
SYMBOL
PARAMETER
TESTCONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CBO
C to B break down voltage
I
C
=50AI
E
=0mA
50
V
V
(BR)EBO
E to B break down voltage
I
E
=50AI
C
=0mA
6
V
V
(BR)CEO
C to E break down voltage
I
C
=1mAR
BE
=
20
V
I
CBO
Collector cut off current
V
CB
=40VI
E
=0mA
0.5
A
I
EBO
Emitter cut off current
V
EB
=5VI
C
=0mA
0.5
A
DC forward current gain
V
CE
=2VI
C
=0.5A
120
390
-
V
CE(sat)
C to E saturation voltage
I
C
=4AI
B
=100mA
0.25
1.0
V
f
T
Gain band width product
V
CE
=6VI
E
=-50mA
150
MHz
Cob
Collector output capacitance
V
CB
=20VI
E
=0mAf=1MHz
30
pF
*Measured using pulse current.
*It shows
classification in right table.
Marking
120 to 270
180 to 390
COMMON EMITTER TRANSFER
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
BASE TO EMITTER VOLTAGE
C
OLLECTER CURRENT
VCE=2V
Ta=100
25
-25
COMMON EMITTER OUTPUT
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2
COLLECTER TO EMITTER VOLTAGE
COLLECTER CURRENT
Ta=25
IB=0mA
5mA
10mA
15mA
20mA
25mA
30mA
35mA
4050mA
Pc=2W
DC FORWARD CURRENT GAIN
VS. COLLECTER CURRENT()
10
100
1,000
10,000
0.001
0.01
0.1
1
10
COLLECTER CURRENT
D
C FORWARD CURRENT GAIN
Ta=25
VCE=5V
2V
1V
DC FORWARD CURRENT GAIN
VS. COLLECTER CURRENT()
10
100
1,000
10,000
0.001
0.01
0.1
1
10
COLLECTER CURRENT
DC FORWARD CURRENT GAIN
VCE=1V
Ta=100
25
-25
ISAHAYA ELECTRONICS CORPORATION
Transistor
DEVELOPING
2SC5807
For strobe,DC/DC convertor Application
Silicon NPN Epitaxial Type
DC FORWARD CURRENT GAIN
VS. COLLECTER CURRENT()
10
100
1,000
10,000
0.001
0.01
0.1
1
10
COLLECTER CURRENT
DC FORWARD CURRENT GAIN
VCE=2V
Ta=100
25
-25
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT()
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
COLLECTER CURRENT
COLLECTER TO EMITTER
SATURATION VOLTAGE
IC/IB=10
Ta=100
-25
25
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT()
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
COLLECTER CURRENT
COLLECTER TO EMITTER
SATURATION VOLTAGE
IC/IB=30
Ta=100
-25
25
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT()
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
COLLECTER CURRENT
COLLECTER TO EMITTER
SATURATION VOLTAGE
IC/IB=40
Ta=100
-25
25
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT()
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
COLLECTER CURRENT
COLLECTER TO EMITTER
SATURATION VOLTAGE
IC/IB=50
Ta=100
-25
25
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT()
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
COLLECTER CURRENT
COLLECTER TO EMITTER
SATURATION VOLTAGE
Ta=25
IC/IB=50
40
30
10
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
PDF 
ZIP