IS62LV256
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. K
12/11/02
Copyright 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Access time: 45, 70 ns
Low active power: 70 mW
Low standby power
-- 45 W CMOS standby
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
DESCRIPTION
The
ISSI
IS62LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
's
high-performance CMOS double-metal technology.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
10 W (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE
) input and an active LOW Output Enable
(
OE
) input. The active LOW Write Enable (
WE
) controls both
writing and reading of the memory.
The IS62LV256 is pin compatible with other 32K x 8 SRAMs
in 300-mil SOJ, 330-mil plastic SOP, and TSOP (Type I Normal
and Reverse Bent) packages.
32K x 8 LOW VOLTAGE STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
256 X 1024
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
DECEMBER 2002
IS62LV256
ISSI
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. K
12/11/02
PIN CONFIGURATION
28-Pin SOJ and SOP
28-Pin TSOP (Type I) (Normal Bent)
PIN DESCRIPTIONS
A0-A14
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
TRUTH TABLE
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
I/O Operation
Vcc Current
Not Selected
X
H
X
High-Z
I
SB
1
, I
SB
2
(Power-down)
Output Disabled
H
L
H
High-Z
I
CC
1
, I
CC
2
Read
H
L
L
D
OUT
I
CC
1
, I
CC
2
Write
L
L
X
D
IN
I
CC
1
, I
CC
2
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
28-Pin TSOP (Type I) (Reverse Bent)
A3
A4
A5
A6
A7
A12
A14
VCC
WE
A13
A8
A9
A11
OE
7
6
5
4
3
2
1
28
27
26
25
24
23
22
8
9
10
11
12
13
14
15
16
17
18
19
20
21
A2
A1
A0
I/O0
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
IS62LV256
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. K
12/11/02
OPERATING RANGE
Range
Ambient Temperature
V
CC
Commercial
0C to +70C
3.3V 5%
Industrial
40C to +85C
3.3V 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= 1.0 mA
2.4
--
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
Com.
2
2
A
Ind.
5
5
I
LO
Output Leakage
GND
V
OUT
V
CC
, Outputs Disabled
Com.
2
2
A
Ind.
5
5
Notes:
1. V
IL
= 3.0V for pulse width less than 10 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to +4.6
V
T
BIAS
Temperature Under Bias
55 to +125
C
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
0.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
IS62LV256
ISSI
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. K
12/11/02
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25C, f = 1 MHz, Vcc =3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-45 ns
-70 ns
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
I
CC
1
Vcc Operating
V
CC
= Max.,
CE
= V
IL
Com.
--
20
--
20
mA
Supply Current
I
OUT
= 0 mA, f = 0
Ind.
--
30
--
30
I
CC
2
Vcc Dynamic Operating
V
CC
= Max.,
CE
= V
IL
Com.
--
35
--
30
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
--
45
--
40
I
SB
1
TTL Standby Current
V
CC
= Max.,
Com.
--
2
--
2
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
--
5
--
5
CE
V
IH
, f = 0
I
SB
2
CMOS Standby
V
CC
= Max.,
Com.
--
90
--
90
A
Current (CMOS Inputs)
CE
V
CC
0.2V,
Ind.
--
200
--
200
V
IN
V
CC
0.2V, or
V
IN
0.2V, f = 0
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IS62LV256
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. K
12/11/02
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-45 ns
-70 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
t
RC
Read Cycle Time
45
--
70
--
ns
t
AA
Address Access Time
--
45
--
70
ns
t
OHA
Output Hold Time
2
--
2
--
ns
t
ACE
CE
Access Time
--
45
--
70
ns
t
DOE
OE
Access Time
--
25
--
35
ns
t
LZOE
(2)
OE
to Low-Z Output
0
--
0
--
ns
t
HZOE
(2)
OE
to High-Z Output
0
20
0
25
ns
t
LZCE
(2)
CE
to Low-Z Output
3
--
3
--
ns
t
HZCE
(2)
CE
to High-Z Output
0
20
0
25
ns
t
PU
(3)
CE
to Power-Up
0
--
0
--
ns
t
PD
(3)
CE
to Power-Down
--
30
--
50
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
5 ns
Input and Output Timing
1.5V
and Reference Levels
Output Load
See Figures 1a and 1b
1213
100 pF
Including
jig and
scope
1378
OUTPUT
3.3V
1213
5 pF
Including
jig and
scope
1378
OUTPUT
3.3V
Figures 1a
Figures 1b
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