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Электронный компонент: IS25C02

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Integrated Silicon Solution, Inc. -- 1-800-379-4774
1
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
2K-BIT/4K-BIT SPI SERIAL
ELECTRICALLY ERASABLE PROM
FEATURES
Serial Peripheral Interface (SPI) Compatible
-- Supports SPI Modes 0 (0,0) and 3 (1,1)
Low-voltage Operation
-- Vcc = 1.8V to 5.5V
Low power CMOS
-- Active current less than 3.0 mA (2.5V)
-- Standby current less than 1 A (2.5V)
Block Write Protection
-- Protect 1/4, 1/2, or Entire Array
16 byte page write mode
-- Partial page writes allowed
10 MHz Clock Rate (5V)
Self timed write cycles
-- 5 ms max. @ 2.5V
High-reliability
-- Endurance: 1 million cycles per byte
-- Data retention: 100 years
8-pin PDIP, 8-pin SOIC, and 8-pin TSSOP packages
are available
Lead-free available
Preliminary Information
January 2006
The IS25C02 and IS25C04 are electrically erasable
PROM devices that use the Serial Peripheral Interface
(SPI) for communications. The IS25C02 is 2Kbit
(256x 8) and the IS25C04 is 4Kbit (512x 8). The
IS25C02/04 EEPROMs are offered in a wide operating
voltage range of 1.8V to 5.5V to be compatible with
most application voltages. ISSI designed the IS25C02/
04 to be an efficient SPI EEPROM solution. The
devices are packaged in 8-pin PDIP, 8-pin SOIC, and 8-
pin TSSOP.
The functional features of the IS25C02/04 allow them to
be among the most advanced serial non-volatile memo-
ries available. Each device has a Chip-Select (
CS) pin,
and a 3-wire interface of Serial Data In (SI), Serial Data
Out (SO), and Serial Clock (SCK). While the 3-wire
interface of the IS25C02/04 provides for high-speed
access, a
HOLD pin allows the memories to ignore the
interface in a suspended state; later the
HOLD pin re-
activates communication without re-initializing the serial
sequence. A Status Register facilitates a flexible write
protection mechanism, and a device-ready bit (
RDY).
DESCRIPTION
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
Write Protect (
WP
WP
WP
WP
WP): The purpose of this input signal is
to initiate Hardware Write Protection mode. This mode
prevents the 256/512 byte array or the Status Register
from being altered. To cause Hardware Write Protection,
WP must be Low. WP may be hardwired to Vcc or GND.
HOLD (
HOLD
HOLD
HOLD
HOLD
HOLD): This input signal is used to suspend the
device in the middle of a serial sequence and temporarily
ignore further communication on the bus (SI, SO, SCK).
Together with Chip Select, the
HOLD signal allows
multiple slaves to share the bus.
The
HOLD signal
transitions must occur only when SCK is Low, and be
held stable during SCK transitions. (See Figure 8 for
Hold timing) To disable this feature,
HOLD may be
hardwired to Vcc.
PIN DESCRIPTIONS
CS
Chip Select
SCK
Serial Data Clock
SI
Serial Data Input
SO
Serial Data Output
GND
Ground
V
CC
Power
WP
Write Protect
HOLD
Suspends Serial Input
PIN DESCRIPTIONS
Serial Clock (SCK): This timing signal provides syn-
chronization between the microcontroller and IS25C02/
04. Op-Codes, byte addresses, and data are latched on
SI with a rising edge of the SCK. Data on SO is re-
freshed on the falling edge of SCK for SPI modes (0,0)
and (1,1).
Serial Data Input (SI): This is the input pin for all data
that the IS25C02/04 is required to receive.
Serial Data Output (SO): This is the output pin for all
data transmitted from the IS25C02/04.
PIN CONFIGURATION
8-Pin DIP, SOIC, and TSSOP
Chip Select (
CS
CS
CS
CS
CS): The CS pin activates the device.
Upon power-up,
CS should follow Vcc. When the device
is to be enabled for instruction input, the signal requires
a High-to-Low transition. While
CS is stable Low, the
master and slave will communicate via SCK, SI, and SO
signals. Upon completion of communication,
CS must
be driven High. At this moment, the slave device may
start its internal write cycle. When
CS is high, the
device enters a power-saving standby mode, unless an
internal write operation is underway. During this mode,
the SO pin becomes high impedance.
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
Integrated Silicon Solution, Inc. -- 1-800-379-4774
3
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
SERIAL INTERFACE DESCRIPTION
MASTER: The device that provides a clock signal.
SLAVE: The IS25C02/04 is a slave because the clock
signal is an input.
TRANSMITTER/RECEIVER: The IS25C02/04 has both
data input (SI) and data output (SO).
MSB: The most significant bit. It is always the first bit
transmitted or received.
OP-CODE: The first byte transmitted to the slave
following CS transition to LOW. If the OP-CODE is a
valid member of the IS25C02/04 instruction set (Table 3),
then it is decoded appropriately. If the OP-CODE is not
valid, and the SO pin remains in high impedance.
BLOCK DIAGRAM
STATUS
REGISTER
256 x 8/512 x 8
MEMORY ARRAY
HOLD
CS
WP
CLOCK
SO
OUTPUT
BUFFER
SCK
SI
DATA
REGISTER
MODE
DECODE
LOGIC
GND
VCC
ADDRESS
DECODER
4
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
STATUS REGISTER
Table 1. Status Register Format
Bit 7
Bit 6 Bit 5 Bit 4
Bit 3 Bit 2
Bit1 Bit 0
X
X
X
X
BP1
BP0
WEN
RDY
The status register contains 8-bits for write protection
control and write status. (See Table 1). It is the only
region of memory other than the main array that is
accessible by the user.
The Status Register is Read-Only if either: a) Hardware
Write Protection is enabled or b) WEN is set to 0. If
neither is true, it can be modified by a valid instruction.
Ready (
RDY
RDY
RDY
RDY
RDY), Bit 0: When RDY = 1, it indicates that
the device is busy with a write cycle.
RDY = 0 indi-
cates that the device is ready for an instruction. If
RDY
= 1, the only command that will be handled by the
device is Read Status Register.
Don't Care, Bits 4-7: Each of these bits can receive
either 0 or 1, but values will not be retained. When
these bits are read from the register, they are always 0.
Notes:
1. X = Don't care bit.
2. During internal write cycles, bits 0 to 7 are temporarily 1's.
Block Protect (BP1, BP0), Bits 2-3: Together, these
bits represent one of four block protection configurations
implemented for the memory array. (See Table 2 for
details.)
BP0 and BP1 are non-volatile cells similar to regular
array cells, and factory programmed to 0. The block of
memory defined by these bits is always protected,
regardless of the setting of
WP or WEN.
Table 2. Block Protection
Status
Register
Bits
Array Addresses Protected
Level
BP1
BP0
IS25C02
IS25C04
0
0
0
None
None
1(1/4)
0
1
C0h
180h
-FFh
-1FFh
2(1/2)
1
0
80h
100h
-FFh
-1FFh
3(All)
1
1
00h
000h
-FFh
-1FFh
Write Enable (WEN), Bit 1: This bit represents the
status of device write protection. If WEN = 0, the Status
Register and the entire array is protected from modifica-
tion, regardless of the setting of
WP pin or block protec-
tion. The only way to set WEN to 1 is via the Write
Enable command (WREN). WEN is reset to 0 upon
power-up, successful completion of Write, WRDI,
WRSR, or
WP being Low.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
5
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
WRITE ENABLE (WREN)
When Vcc is initially applied, the device powers up with
both status register and entire array in a write-disabled
state. Upon completion of Write Disable (WRDI), Write
Status Register (WRSR), or Write Data to Array
(WRITE), the device resets the WEN bit in the Status
Register to 0. Prior to any data modification, a WREN
instruction is necessary to set WEN to 1. (See Figure 2
for timing).
WRITE DISABLE (WRDI)
The device can be completely protected from modifica-
tion by resetting WEN to 0 through the WRDI instruc-
tion. (See Figure 3 for timing).
READ STATUS REGISTER (RDSR)
The Read Status instruction indicates the status of the
Block Protection setting (see Table 2), the Write Enable
state, and the
RDY status. RDSR is the only instruc-
tion accepted when a write cycle is underway. It is
recommended that the status of
RDY be checked,
especially prior to an attempted modification of data.
The 8 bits of the Status Register can be repeatedly
output on SO after the initial Op-code. (See Figure 4 for
timing).
Table 3. Instruction Set
Name
Op-code
Operation
Address
Data(SI)
Data (SO)
WREN
0000 X110
Set Write Enable Latch
-
-
-
WRDI
0000 X100
Reset Write Enable Latch
-
-
-
RDSR
0000 X101
Read Status Register
-
-
D7-D0,...
WRSR
0000 X001
Write Status Register
-
D7-D0
-
READ
0000 A8011
Read Data from Array
A7-A0
-
D7-D0,...
WRITE 0000 A8010
Write Data to Array
A7-A0
D7-D0,...
-
DEVICE OPERATION
The operations of the IS25C02/04 are controlled by a set of instructions that are clocked-in serially SI pin. (See Table
3). To begin an instruction, the chip select (
CS) should be dropped Low. Subsequently, each Low-to-High transition of
the clock (SK) will latch a stable value on the SI pin. After the 8-bit op-code, it may be appropriate to continue to input
an address or data to SI, or to output data from SO. During data output, values appear on the falling edge of SK. All
bits are transferred with MSB first. Upon the last bit of communication, but prior to any following Low-to-High transition
of SK,
CS should be raised High to end the transaction. The device then would enter Standby Mode if no internal
programming were underway.
1. X = Don't care bit. For consistency, it is best to use "0".
2. Some address bits are don't care. See Table 5.
3. If the bits clocked-in for an op-code are invalid, SO remains high impedance, and upon CS going High there is no
affect. A valid op-code with an invalid number of bits clocked-in for address or data will cause an attempt to modify the
array or Status Register to be ignored.
6
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
Table 5. Address Key
Name
IS25C02
IS25C04
A
N
A
7-
A
0
A
8-
A
0
Don't
A
8
-
Care Bits
WRITE STATUS REGISTER (WRSR)
This instruction lets the user choose a Block Protection
setting. The values of the other data bits incorporated
into WRSR can be 0 or 1, and are not stored in the
Status Register. WRSR will be ignored unless both the
following are true: a) WEN = 1, due to a prior WREN
instruction; and b) Hardware Write Protection is not
enabled. (See Table 4 for details). Except for the
RDY
status, the values in the Status Register remain un-
changed until the moment when the write cycle is
complete and the register is updated. Once successfully
completed, WEN is reset for complete chip write protec-
tion. (See Figure 5 for timing).
READ DATA (READ)
This instruction begins with the op-code and the 8-bit
address, and causes the selected data byte to be
shifted out on SO. Following this first data byte, addi-
tional sequential bytes are output. If the data byte in the
highest address is output, the address rolls-over to the
lowest address in the array, and the output could loop
indefinitely. At any time, a rising
CS signal completes
the operation. (See Figure 6 for timing).
WRITE DATA (WRITE)
The WRITE instruction begins with the op-code, the 8-bit
address of the first byte to be modified, and the first data
byte. Additional data bytes may be written sequentially
to the array after the first byte. Each WRITE instruction
can affect the contents of a 16 byte page, but no more.
The page begins at address XXXX 0000, and ends with
XXXX 1111. If the last byte of the page is input, the
address rolls over to the beginning of the same page.
More than 16 data bytes can be input during the same
instruction, but upon a completed write cycle, a page
would only contain the last 16 bytes.
The region of the array defined within Block Protection
cannot be modified as long as that block configuration is
selected. The region of the array outside the Block
Protection can only be modified if Write Enable (WEN) is
set to 1. Therefore, it may be necessary that a WREN
instruction occur prior to WRITE. In addition, if Hardware
Write Protection is enabled, the memory array cannot be
modified. Once Write is successfully completed, WEN
is reset for complete chip write protection. (See Figure 7
for timing).
Table 4. Write Protection
WP
WP
WP
WP
WP
Hardware Write
WEN
Inside Block
Outside Block
Status Register
Protection
0
Enabled
X
Read-only
Read-only
Read-only
1
Not Enabled
0
Read-only
Read-only
Read-only
1
Not Enabled
1
Read-only
Unprotected
Unprotected
Note: X = Don't care bit.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
7
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
S
Supply Voltage
-0.5 to + 6.5
V
V
P
Voltage on Any Pin
0.5 to Vcc + 0.5
V
T
BIAS
Temperature Under Bias
55 to +125
C
T
STG
Storage Temperature
65 to +150
C
I
OUT
Output Current
5
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions outside those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE (IS25C04-2 and IS25C02-2)
Range
Ambient Temperature
V
CC
Industrial
40C to +85C
1.8V to 5.5V
Note: ISSI offers Industrial grade for Commercial applications (0
o
C to +70
o
C).
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters and not 100%
tested.
2. Test conditions: T
A
= 25C, f = 1 MHz, Vcc = 5.0V.
OPERATING RANGE (IS25C04-3 and IS25C02-3)
Range
Ambient Temperature
V
CC
Automotive
40C to +125C
2.5V to 5.5V
8
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
DC ELECTRICAL CHARACTERISTICS
T
A
= 40C to +85C for Industrial, T
A
= 40C to +125C for Automotive.
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OL
1
Output LOW Voltage
V
CC
= 5V, I
OL
= 2 mA
--
0.4
V
V
OL
2
Output LOW Voltage
V
CC
= 2.5V, I
OL
= 1.5 mA
--
0.4
V
V
OL
3
Output LOW Voltage
V
CC
= 1.8V, I
OL
= 0.15 mA
--
0.2
V
V
O
H1
Output HIGH Voltage
V
CC
= 5V, I
OH
= -2 mA
0.8
X
V
CC
--
V
V
O
H2
Output HIGH Voltage
V
CC
= 2.5V, I
OH
= -0.4mA
0.8
X
V
CC
--
V
V
O
H3
Output HIGH Voltage
V
CC
= 1.8V, I
OH
= -0.1mA
0.8
X
V
CC
--
V
V
IH
Input HIGH Voltage
0.7
X
V
CC
V
CC
+ 1
V
V
IL
Input LOW Voltage
-0.3
0.3
X
V
CC
V
I
LI
Input Leakage Current
V
IN
= 0V
TO
V
CC
-2
2
A
I
LO
Output Leakage Current
V
OUT
= 0V
TO
V
CC
,
CS = V
CC
-2
2
A
POWER SUPPLY CHARACTERISTICS
T
A
= 40C to +85C for Industrial.
Symbol Parameter
Test Conditions
Min.
Max.
Unit
I
CC
1
Vcc Operating Current
Read/Write at 10 MHz (Vcc = 5V)
--
5.0
mA
I
CC
2
Vcc Operating Current
Read/Write at 5 MHz (Vcc = 2.5V)
--
3.0
mA
I
CC
3
Vcc Operating Current
Read/Write at 2 MHz (Vcc = 1.8V)
--
1.0
mA
I
SB
1
Standby Current
Vcc = 5.0V, V
IN
= V
CC
or GND
--
2
A
CS = Vcc
I
SB
2
Standby Current
Vcc = 2.5V, V
IN
= V
CC
or GND
--
1
A
CS = Vcc
I
SB
3
Standby Current
Vcc = 1.8V, V
IN
= V
CC
or GND
--
0.5
A
CS = Vcc
POWER SUPPLY CHARACTERISTICS
T
A
= 40C to +125C for Automotive.
Symbol Parameter
Test Conditions
Min.
Max.
Unit
I
CC
1
Vcc Operating Current
Read/Write at 5 MHz (Vcc = 5V)
--
4.0
mA
I
CC
2
Vcc Operating Current
Read/Write at 5 MHz (Vcc = 2.5V)
--
3.0
mA
I
SB
1
Standby Current
Vcc = 5.0V, V
IN
= V
CC
or GND
--
5.0
A
CS = Vcc
I
SB
2
Standby Current
Vcc =2.5V, V
IN
= V
CC
or GND
--
2.0
A
CS = Vcc
Integrated Silicon Solution, Inc. -- 1-800-379-4774
9
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
AC Characteristics
T
A
= 40C to +85C for Industrial.
1.8V


Vcc < 2.5V 2.5V Vcc < 4.5V 4.5V Vcc 5.5V
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Units
f
SCK
SCK Clock Frequency
0
2
0
5
0
10
MHz
t
RI
Input Rise Time
--
2
--
2
--
2
s
t
FI
Input Fall Time
--
2
--
2
--
2
s
t
WH
SCK High Time
200
--
90
--
40
--
ns
t
WL
SCK Low Time
200
--
90
--
40
--
ns
t
CS
CS High Time
200
--
100
--
40
--
ns
t
CSS
CS Setup Time
200
--
90
--
40
--
ns
t
CSH
CS Hold Time
200
--
90
--
25
--
ns
t
SU
Data In Setup Time
40
--
20
--
15
--
ns
t
H
Data In Hold Time
50
--
30
--
15
--
ns
t
HD
Hold Setup Time
100
--
50
--
25
--
ns
t
CD
Hold Hold Time
100
--
50
--
25
--
ns
t
V
Output Valid
0
150
0
60
0
25
ns
t
HO
Output Hold Time
0
--
0
--
0
--
ns
t
LZ
Hold to Output Low Z
0
100
0
50
0
25
ns
t
HZ
Hold to Output High Z
--
250
--
100
--
25
ns
t
DIS
Output Disable Time
--
250
--
100
--
25
ns
t
WC
Write Cycle Time
--
10
--
5
--
5
ms
C
L
= 100pF
10
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
AC Characteristics
T
A
= 40C to +125C for Automotive.
2.5V


Vcc < 4.5V
4.5V


Vcc 5.5V
Symbol
Parameter
Min
Max
Min
Max
Units
f
SCK
SCK Clock Frequency
0
5
0
10
MHz
t
RI
Input Rise Time
--
2
--
2
s
t
FI
Input Fall Time
--
2
--
2
s
t
WH
SCK High Time
90
--
40
--
ns
t
WL
SCK Low Time
90
--
40
--
ns
t
CS
CS High Time
100
--
40
--
ns
t
CSS
CS Setup Time
90
--
40
--
ns
t
CSH
CS Hold Time
90
--
25
--
ns
t
SU
Data In Setup Time
20
--
15
--
ns
t
H
Data In Hold Time
30
--
15
--
ns
t
HD
Hold Setup Time
50
--
25
--
ns
t
CD
Hold Hold Time
50
--
25
--
ns
t
V
Output Valid
0
60
0
25
ns
t
HO
Output Hold Time
0
--
0
--
ns
t
LZ
Hold to Output Low Z
0
50
0
25
ns
t
HZ
Hold to Output High Z
--
100
--
25
ns
t
DIS
Output Disable Time
--
100
--
25
ns
t
WC
Write Cycle Time
--
5
--
5
ms
C
L
= 100pF
Integrated Silicon Solution, Inc. -- 1-800-379-4774
11
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
TIMING DIAGRAMS
Figure 3. WRDI Timing
Figure 2. WREN Timing
Figure 1. Synchronous Data Timing
CS
SK
D
IN
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
VALID IN
HIGH-Z
HIGH-Z
t
CSS
t
WH
t
WL
t
H
t
SU
t
CS
t
CSH
t
V
t
HO
t
DIS
HIGH-Z
WREN OP-CODE
CS
SK
D
IN
D
OUT
HIGH-Z
WRDI OP-CODE
CS
SK
D
IN
D
OUT
12
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
Figure 6. READ Timing
Figure 5. WRSR Timing
Figure 4. RDSR Timing
CS
SK
Din
Dout
Instruction
7 6 5 4 3 2 1 0
DATA OUT
CS
SK
Din
Dout
Instruction
7 6 5 4 3 2 1 0
DATA IN
7 6 5 4 3 2 1 0
CS
SK
Din
Dout
Instruction BYTE
Address
7 6 5 4 3 2 1 0
DATA OUT
A8
Integrated Silicon Solution, Inc. -- 1-800-379-4774
13
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
Figure 8.
HOLD
HOLD
HOLD
HOLD
HOLD Timing
Figure 7. WRITE Timing
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
CS
SK
Din
Dout
Instruction BYTE
Address
A8
DATA IN
CS
SCK
HOLD
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14
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Preliminary Information
Rev. 00F
12/22/05
IS25C02
IS25C04
ISSI
ORDERING INFORMATION
Industrial Range: 40C to +85C
Voltage
Range
Part Number
Package
1.8V
IS25C02-2PI
300-mil Plastic DIP
to 5.5V
IS25C02-2GI
Small Outline (JEDEC STD)
IS25C02-2ZI
169-mil TSSOP
1.8V
IS25C04-2PI
300-mil Plastic DIP
to 5.5V
IS25C04-2GI
Small Outline (JEDEC STD)
IS25C04-2ZI
169-mil TSSOP
Automotive Range: 40C to +125C, Lead-free
Voltage
Range
Part Number
Package
2.5V
IS25C02-3PLA3
300-mil Plastic DIP
to 5.5V
IS25C02-3GLA3
Small Outline (JEDEC STD)
IS25C02-3ZLA3
169-mil TSSOP
2.5V
IS25C04-3PLA3
300-mil Plastic DIP
to 5.5V
IS25C04-3GLA3
Small Outline (JEDEC STD)
IS25C04-3ZLA3
169-mil TSSOP
Industrial Range: -40C to +85C, Lead-free
Voltage
Range
Part Number
Package
1.8V
IS25C02-2PLI
300-mil Plastic DIP
to 5.5V
IS25C02-2GLI
Small Outline (JEDEC STD)
IS25C02-2ZLI
169-mil TSSOP
1.8V
IS25C04-2PLI
300-mil Plastic DIP
to 5.5V
IS25C04-2GLI
Small Outline (JEDEC STD)
IS25C04-2ZLI
169-mil TSSOP
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. D
02/14/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
300-mil Plastic DIP
Package Code: N,P
A
D
1
B
N
SEATING PLANE
C
A1
eA
L
e
B1
S
E1
E
S
FOR
32-PIN ONLY
B2
MILLIMETERS
INCHES
Sym. Min.
Max.
Min.
Max.
N0.
Leads
8
A
3.68
4.57
0.145
0.180
A1
0.38
--
0.015
--
B
0.36
0.56
0.014
0.022
B1
1.14
1.52
0.045
0.060
B2
0.81
1.17
0.032
0.046
C
0.20
0.33
0.008
0.013
D
9.12
9.53
0.359
0.375
E
7.62
8.26
0.300
0.325
E1
6.20
6.60
0.244
0.260
eA
8.13
9.65
0.320
0.380
e
2.54 BSC
0.100 BSC
L
3.18
--
0.125
--
S
0.64
0.762
0.025
0.030
Notes:
1. Controlling dimension: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and
should
be measured from the bottom of the package
.
4. Formed leads shall be planar with respect to one another within 0.004
inches at the seating plane.
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. -- 1-800-379-4774
2
Rev. C
10/03/01
150-mil Plastic SOP
Package Code: G, GR
D
SEATING PLANE
B
e
C
1
N
E
A1
A
H
L
Notes:
1. Controlling dimension: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and
should be
measured from the bottom of the package
.
4. Formed leads shall be planar with respect to one another within 0.004 inches at the
seating plane.
150-mil Plastic SOP (G, GR)
Symbol
Min
Max
Min
Max
Ref. Std.
Inches
mm
No. Leads
8
8
A
--
0.068
--
1.73
A1
0.004
0.009
0.1
0.23
B
0.013
0.020
0.33
0.51
C
0.007
0.010
0.18
0.25
D
0.189
0.197
4.8
5
E
0.150
0.157
3.81
3.99
H
0.228
0.245
5.79
6.22
e
0.050 BSC
1.27 BSC
L
0.020
0.035
0.51
0.89
Integrated Silicon Solution, Inc.
PACKAGING INFORMATION
ISSI
Thin Shrink Small Outline TSSOP
Package Code: Z (8 pin, 14 pin)
Rev B 02/01/02
TSSOP (Z)
Ref. Std.
JEDEC MO-153
No. Leads
8
Millimeters
Inches
Symbol Min
Max
Min
Max
A
--
1.20
--
0.047
A1
0.05
0.15
0.002 0.006
A2
0.80
1.05
0.032 0.041
B
0.19
0.30
0.007 0.012
C
0.09
0.20
0.004 0.008
D
2.90
3.10
0.114 0.122
E1
4.30
4.50
0.169 0.177
E
6.40 BSC
0.252 BSC
e
0.65 BSC
0.026 BSC
L
0.45
0.75
0.018 0.030
--
8
--
8
TSSOP (Z)
Ref. Std.
JEDEC MO-153
No. Leads
14
Millimeters
Inches
Symbol Min
Max
Min
Max
A
--
1.20
--
0.047
A1
0.05
0.15
0.002
0.006
A2
0.80
1.05
0.031
0.041
B
0.19
0.30
0.007
0.012
C
0.09
0.20
0.0035 0.008
D
4.90
5.10
0.193
0.201
E1
4.30
4.50
0.170
0.177
E
6.40 BSC
0.252 BSC
e
0.65 BSC
0.026 BSC
L
0.45
0.75
0.0177 0.0295
--
8
--
8
D
B
e
E1
A2
E
C
A
A1
L
1
N
N/2
SSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may
appear in this publication. Copyright 2002, Integrated Silicon Solution, Inc.