Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
09/26/05
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS64WV3216BLL
IS61WV3216BLL
FUNCTIONAL BLOCK DIAGRAM
32K x 16 HIGH-SPEED CMOS STATIC RAM
NOVEMBER 2005
FEATURES
High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
CMOS low power operation:
50 mW (typical) operating
25 W (typical) standby
TTL compatible interface levels
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Automotive Temperature Available
Lead-free available
DESCRIPTION
The
ISSI
IS61/64WV3216BLL is a high-speed, 524,288-bit
static RAM organized as 32,768 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with inno-
vative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS61/64WV3216BLL is packaged in the JEDEC stan-
dard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
A0-A14
CE
OE
WE
32K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
09/26/05
ISSI
IS64WV3216BLL
IS61WV3216BLL
PIN CONFIGURATIONS
44-Pin TSOP-II
48-Pin mini BGA (6mm x 8mm)
PIN DESCRIPTIONS
A0-A14
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB
A3
A4
CE
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
V
DD
V
DD
I/O
12
NC
NC
I/O
4
GND
I/O
14
I/O
13
A14
NC
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
09/26/05
ISSI
IS64WV3216BLL
IS61WV3216BLL
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
V
DD
(15 ns)
V
DD
(12 ns)
Commercial
0C to +70C
2.5V-3.6V
3.3V + 10%
Industrial
40C to +85C
2.5V-3.6V
3.3V + 10%
Automotive
40C to +125C
2.5V-3.6V
3.3V + 10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to V
DD
+0.5
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.5
W
V
DD
V
DD
Related to GND
-0.2 to +3.9
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
X
X
High-Z
High-Z
I
CC
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
D
OUT
High-Z
I
CC
H
L
L
H
L
High-Z
D
OUT
H
L
L
L
L
D
OUT
D
OUT
Write
L
L
X
L
H
D
IN
High-Z
I
CC
L
L
X
H
L
High-Z
D
IN
L
L
X
L
L
D
IN
D
IN
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
09/26/05
ISSI
IS64WV3216BLL
IS61WV3216BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 1.0 mA
2.3
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
2
2
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
2
2
A
Note:
1.
V
IL
(min.) = 0.3V DC; V
IL
(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 4.0 mA
2.4
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
2
2
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
2
2
A
Note:
1.
V
IL
(min.) = 0.3V DC; V
IL
(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
09/26/05
ISSI
IS64WV3216BLL
IS61WV3216BLL
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
-15 ns
Symbol Parameter
Test Conditions
Options
Min.
Max.
Min.
Max.
Unit
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
COM
.
--
35
--
30
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
IND
.
--
45
--
40
AUTO
--
60
--
50
typ.
(2)
--
20
--
20
I
CC
1
Operating Supply
V
DD
= Max.,
COM
.
--
5
--
5
mA
Current
Iout = 0mA, f = 0
IND
.
--
5
--
5
AUTO
--
5
--
5
I
SB
2
CMOS Standby
V
DD
= Max.,
COM
.
--
20
--
20
uA
Current (CMOS Inputs)
CE
V
DD
0.2V,
IND
.
--
50
--
50
V
IN
V
DD
0.2V, or
AUTO
--
75
--
75
V
IN
0.2V, f = 0
typ.
(2)
--
6
--
6
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=2.5V, T
A
=25
o
C. Not 100% tested.
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