Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. A
03/17/06

ISSI

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.

IS65C256AL
IS62C256AL

FEATURES

· Access time: 25 ns, 45 ns

· Low active power: 200 mW (typical)

· Low standby power

-- 150 µW (typical) CMOS standby

-- 15 mW (typical) operating

· Fully static operation: no clock or refresh

required

· TTL compatible inputs and outputs

· Single 5V power supply

· Lead-free available

· Industrial and Automotive temperatures avail-

able

DESCRIPTION

The

ISSI

IS62C256AL/IS65C256AL is a low power,

32,768 word by 8-bit CMOS static RAM. It is fabricated
using

ISSI

's high-performance, low power CMOS tech-

nology.

When

CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down to 150 µW (typical) at CMOS input levels.

Easy memory expansion is provided by using an active
LOW Chip Select (

CE) input and an active LOW Output

Enable (

OE) input. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS62C256AL/IS65C256AL is pin compatible with
other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)
package.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

CE
OE
WE

32K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VDD

I/O

DATA

CIRCUIT

I/O0-I/O7

32K x 8 LOW POWER CMOS STATIC RAM

MARCH 2006

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

03/17/06

ISSI

IS65C256AL
IS62C256AL

PIN CONFIGURATION

28-Pin SOP

A14

A12

I/O0

I/O1

I/O2

GND

VDD
WE

A13

A11
OE

A10
CE

I/O7

I/O6

I/O5

I/O4

I/O3

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to +7.0

STG

Storage Temperature

65 to +150

°C

Power Dissipation

0.5

OUT

DC Output Current (LOW)

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

22
23
24
25
26
27
28
1
2
3
4
5
6
7

21
20
19
18
17
16
15
14
13
12
11
10

9
8

A11

A9
A8

A13

VDD

A14
A12

A7
A6
A5
A4
A3

A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2

PIN CONFIGURATION

28-Pin TSOP

PIN DESCRIPTIONS

A0-A14

Address Inputs

Chip Select Input

Output Enable Input

Write Enable Input

I/O0-I/O7

Input/Output

Power

GND

Ground

TRUTH TABLE

Mode

I/O Operation

Current

Not Selected

High-Z

, I

(Power-down)

Output Disabled

High-Z

, I

Read

OUT

, I

Write

, I

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
03/17/06

ISSI

IS65C256AL
IS62C256AL

OPERATING RANGE

Part No.

Range

Ambient Temperature

IS62C256AL

Commercial

0°C to +70°C

5V ± 10%

IS62C256AL

Industrial

40°C to +85°C

5V ± 10%

IS65C256AL

Automotive

40°C to +125°C

5V ± 10%

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 1.0 mA

2.4

Output LOW Voltage

= Min., I

= 2.1 mA

0.4

Input HIGH Voltage

2.2

+ 0.5

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND

Com.

µA

Ind.

Auto.

Output Leakage

GND

OUT

Com.

µA

Outputs Disabled

Ind.

Auto.

Note: 1. V

= 3.0V for pulse width less than 10 ns.

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

03/17/06

ISSI

IS65C256AL
IS62C256AL

CAPACITANCE

(1,2)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Output Capacitance

OUT

= 0V

Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T

= 25°C, f = 1 MHz, V

= 5.0V.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-25 ns

-45 ns

Symbol

Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

Operating

= Max.,

CE = V

Com.

Supply Current

OUT

= 0 mA, f = 0

Ind.

Auto.

Dynamic Operating

= Max.,

CE = V

Com.

Supply Current

OUT

= 0 mA, f = f

MAX

Ind.

Auto.

typ.

(2)

TTL Standby Current

= Max.,

Com.

100

µA

(TTL Inputs)

= V

or V

Ind.

120

, f = 0

Auto.

150

CMOS Standby

= Max.,

Com.

µA

Current (CMOS Inputs)

0.2V,

Ind.

0.2V, or

Auto.

0.2V, f = 0

typ.

(2)

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

= 5.0V, T

= 25

C and not 100% tested.

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
03/17/06

ISSI

IS65C256AL
IS62C256AL

Figure 1.

Figure 2.

480

5 pF

Including

jig and

scope

255

OUTPUT

AC TEST LOADS

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

3 ns

Input and Output Timing

1.5V

and Reference Levels

Output Load

See Figures 1 and 2

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-25 ns

-45 ns

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACS

CE Access Time

DOE

OE Access Time

LZOE

(2)

OE to Low-Z Output

HZOE

(2)

OE to High-Z Output

LZCS

(2)

CE to Low-Z Output

HZCS

(2)

CE to High-Z Output

(3)

CE to Power-Up

(3)

CE to Power-Down

Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.

480

100 pF

Including

jig and

scope

255

OUTPUT

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

03/17/06

ISSI

IS65C256AL
IS62C256AL

READ CYCLE NO. 2

(1,3)

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

Notes:
1.

WE is HIGH for a Read Cycle.

2. The device is continuously selected.

OE, CE = V

3. Address is valid prior to or coincident with

CE LOW transitions.

DATA VALID

READ1.eps

PREVIOUS DATA VALID

OHA

OUT

ADDRESS

OHA

DOE

LZOE

ACS

LZCS

HZOE

HIGH-Z

DATA VALID

ADDRESS

OUT

HZCS

CS_RD2.eps

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
03/17/06

ISSI

IS65C256AL
IS62C256AL

WRITE CYCLE SWITCHING CHARACTERISTICS

(1,3)

(Over Operating Range)

-25 ns

-45 ns

Symbol

Parameter

Min.

Max.

Min. Max.

Unit

Write Cycle Time

SCS

CE to Write End

Address Setup Time to Write End

Address Hold from Write End

Address Setup Time

PWE

WE Pulse Width

PWE

(4)

Data Setup to Write End

Data Hold from Write End

Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of

CE LOW and WE LOW. All signals must be in valid states to initiate a Write,

but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.

4. Tested with

OE HIGH.

AC WAVEFORMS

WRITE CYCLE NO. 1

(

CE Controlled, OE is HIGH or LOW)

(1 )

DATA UNDEFINED

VALID ADDRESS

SCS

PWE1

PWE2

HIGH-Z

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

CS_WR1.eps

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

03/17/06

ISSI

IS65C256AL
IS62C256AL

AC WAVEFORMS

WRITE CYCLE NO. 2

(

OE is HIGH During Write Cycle)

(1,2)

WRITE CYCLE NO. 3

(

OE is LOW During Write Cycle)

(1)

Notes:
1. The internal write time is defined by the overlap of

CE LOW and WE LOW. All signals must be in valid states to initiate a Write,

but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.

2. I/O will assume the High-Z state if

OE = V

DATA UNDEFINED

LOW

VALID ADDRESS

PWE1

HIGH-Z

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

CS_WR2.eps

DATA UNDEFINED

VALID ADDRESS

LOW

PWE2

HIGH-Z

HZWE

ADDRESS

OUT

DATA

VALID

LZWE

CS_WR3.eps

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
03/17/06

ISSI

IS65C256AL
IS62C256AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

for Data Retention

See Data Retention Waveform

2.0

5.5

Data Retention Current

= 2.0V,

0.2V

Com.

µA

0.2V, or V

+ 0.2V

Ind.

Auto.

SDR

Data Retention Setup Time See Data Retention Waveform

RDR

Recovery Time

See Data Retention Waveform

Note:

1. Typical Values are measured at V

= 5V, T

= 25

C and not 100% tested.

DATA RETENTION WAVEFORM (

CE Controlled)

VDD

- 0.2V

SDR

RDR

GND

4.5V

2.2V

Data Retention Mode

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

03/17/06

ISSI

IS65C256AL
IS62C256AL

ORDERING INFORMATION

Commercial Range: 0°C to +70°C

Speed

(ns)

Order Part No.

Package

IS62C256AL-45T

TSOP

IS62C256AL-45TL

TSOP, Lead-free

IS62C256AL-45U

Plastic SOP

IS62C256AL-45UL

Plastic SOP, Lead-free

ORDERING INFORMATION

Industrial Range: 40°C to +85°C

Speed

(ns)

Order Part No.

Package

IS62C256AL-25TI

TSOP

IS62C256AL-25UI

Plastic SOP

IS62C256AL-45TI

TSOP

IS62C256AL-45TLI

TSOP, Lead-free

IS62C256AL-45UI

Plastic SOP

IS62C256AL-45ULI

Plastic SOP, Lead-free

ORDERING INFORMATION

Automotive Range: 40°C to +125°C

Speed

(ns)

Order Part No.

Package

IS65C256AL-25TA3

TSOP

IS65C256AL-25TLA3

TSOP, Lead-free

IS65C256AL-25UA3

Plastic SOP

IS65C256AL-25ULA3

Plastic SOP, Lead-free

IS65C256AL-45TA3

TSOP

IS65C256AL-45TLA3

TSOP, Lead-free

IS65C256AL-45UA3

Plastic SOP

IS65C256AL-45ULA3

Plastic SOP, Lead-free

Integrated Silicon Solution, Inc.

ISSI

PACKAGING INFORMATION

SEATING PLANE

Plastic TSOP - 28-pins
Package Code: T (Type I)

Plastic TSOP (T--Type I)

Millimeters

Inches

Symbol

Min

Max

Min

Max

Ref. Std.

No. Leads

1.00

1.20

0.037

0.047

0.05

0.20

0.002

0.008

0.16

0.27

0.006

0.011

0.10

0.20

0.004

0.008

7.90

8.10

0.308

0.316

11.70

11.90

0.456

0.465

13.20

13.60

0.515

0.531

0.55 BSC

0.022 BSC

0.30

0.70

0.011

0.027

Notes:
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and

should be measured from the bottom of the package

4. Formed leads shall be planar with respect to one another within

0.004 inches at the seating plane.

PK13197T28 Rev. B 01/31/97

PACKAGING INFORMATION

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/26/03

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

330-mil Plastic SOP
Package Code: U (28-pin)

SEATING PLANE

h x 45

Notes:

1. Controlling dimension: inches, unless

otherwise specified.

2. BSC = Basic lead spacing between

centers.

3. Dimensions D and E1 do not include

mold flash protrusions and should be

measured from the bottom of the
package.

4. Formed leads shall be planar with

respect to one another within 0.004
inches at the seating plane.

MILLIMETERS

INCHES

Sym.

Min.

Max.

Min.

Max.

No. Leads 28

2.84

0.112

0.10

0.004

0.36

0.51

0.014

0.020

0.25

0.010

17.98

18.24

0.708

0.718

11.51

12.12

0.453

0.477

8.28

8.53

0.326

0.336

e 1.27 BSC

0.050 BSC

0.30

0.51

0.012

0.020

0.71

1.14

0.028

0.045

0.58

1.19

0.023

0.047

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