IS62WV12816ALL
IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. E
06/08/05
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
128K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns, 70ns
CMOS low power operation
36 mW (typical) operating
9 W (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.65V--2.2V V
DD
(62WV12816ALL)
2.5V--3.6V V
DD
(62WV12816BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
2CS Option Available
Lead-free available
DESCRIPTION
The
ISSI
IS62WV12816ALL/ IS62WV12816BLL are high-
speed, 2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (
LB)
access.
The IS62WV12816ALL and IS62WV12816BLL are packaged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
JUNE 2005
A0-A16
CS1
OE
WE
128K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
CS2
IS62WV12816ALL, IS62WV12816BLL
ISSI
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. E
06/08/05
PIN CONFIGURATIONS
48-Pin mini BGA (6mm x 8mm)
(Package Code B)
PIN DESCRIPTIONS
A0-A16
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CS1
, CS2
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
N/C
I/O
8
UB
A3
A4
CSI
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
V
DD
V
DD
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
48-Pin mini BGA (6mm x 8mm)
2 CS Option (Package Code B2)
44-Pin mini TSOP (Type II)
(Package Code T)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
CS2
I/O
8
UB
A3
A4
CS1
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
VDD
VDD
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
IS62WV12816ALL, IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. E
06/08/05
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CS1
CS1
CS1
CS1
CS1
CS2
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
X
X
L
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
X
X
X
X
H
H
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
H
L
X
High-Z
High-Z
I
CC
H
L
H
H
X
L
High-Z
High-Z
I
CC
Read
H
L
H
L
L
H
D
OUT
High-Z
I
CC
H
L
H
L
H
L
High-Z
D
OUT
H
L
H
L
L
L
D
OUT
D
OUT
Write
L
L
H
X
L
H
D
IN
High-Z
I
CC
L
L
H
X
H
L
High-Z
D
IN
L
L
H
X
L
L
D
IN
D
IN
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
IS62WV12816ALL
IS62WV12816BLL
Commercial
0C to +70C
1.65V - 2.2V
2.5V - 3.6V
Industrial
40C to +85C
1.65V - 2.2V
2.5V - 3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.2 to V
DD
+0.3
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
IS62WV12816ALL, IS62WV12816BLL
ISSI
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. E
06/08/05
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.65-2.2V
1.4
--
V
I
OH
= -1 mA
2.5-3.6V
2.2
--
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.65-2.2V
--
0.2
V
I
OL
= 2.1 mA
2.5-3.6V
--
0.4
V
V
IH
Input HIGH Voltage
1.65-2.2V
1.4
V
DD
+ 0.2
V
2.5-3.6V
2.2
V
DD
+ 0.3
V
V
IL
(1)
Input LOW Voltage
1.65-2.2V
0.2
0.4
V
2.5-3.6V
0.2
0.6
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
A
Notes:
1. V
IL
(min.) = 1.0V for pulse width less than 10 ns.
IS62WV12816ALL, IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. E
06/08/05
IS62WV12816ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
Unit
70
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
15
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
20
I
CC
1
Operating Supply
V
DD
= Max.,
Com.
3
mA
Current
I
OUT
= 0 mA, f = 0
Ind.
3
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.3
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.3
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
5
A
Current (CMOS Inputs)
CS1
V
DD
0.2V,
Ind.
10
CS2
0.2V,
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
0.2V, f = 0;
UB
/
LB
= V
DD
0.2V
IS62WV12816BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
Max.
Unit
45
55
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
35
25
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
40
30
typ.
(2)
25
20
I
CC
1
Operating Supply
V
DD
= Max.,
Com.
3
3
mA
Current
I
OUT
= 0 mA, f = 0
Ind.
3
3
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.3
0.3
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.3
0.3
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
10
10
A
Current (CMOS Inputs)
CS1
V
DD
0.2V,
Ind.
10
10
CS2
0.2V,
typ.
(2)
3
3
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
0.2V, f = 0;
UB
/
LB
= V
DD
0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.0V, T
A
= 25
o
C and not 100% tested.
PDF 
ZIP