Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. 00B
06/21/06
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS62WV20488ALL
IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER
CMOS STATIC RAM
PRELIMINARY INFORMATION
JULY 2006
FEATURES
High-speed access times:
25, 35 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single power supply
V
DD
1.65V to 2.2V (IS62WV20488ALL)
speed = 35ns for Vcc = 1.65V to 2.2V
V
DD
2.4V to 3.6V (IS62WV20488BLL)
speed = 25ns for Vcc = 2.4V to 3.6V
Packages available:
48-ball miniBGA (9mm x 11mm)
44-pin TSOP (Type II)
Industrial Temperature Support
Lead-free available
DESCRIPTION
The
ISSI
IS62WV20488ALL/BLL is a high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The
IS62WV20488ALL/BLL is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When
CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1 is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
The IS62WV20488ALL/BLL operates from a single
power supply and all inputs are TTL-compatible.
The IS62WV20488ALL/BLL is available in 48 ball mini
BGA and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A20
CS1
CS2
OE
WE
2M X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. 00B
06/21/06
ISSI
IS62WV20488ALL
IS62WV20488BLL
PIN DESCRIPTIONS
A0-A20
Address Inputs
CS1, CS2
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Data Input / Output
V
DD
Power
GND
Ground
NC
No Connection
48-pin Mini BGA (M ) (9mm x 11mm)
44-pin TSOP (Type II )
1 2 3 4 5 6
A
B
C
D
E
F
G
H
NC
NC
NC
GND
V
DD
NC
NC
A18
OE
NC
NC
NC
NC
NC
A19
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CS1
I/O1
I/O3
I/O4
I/O5
WE
A11
CS2
I/O0
I/O2
V
DD
GND
I/O6
I/O7
A20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A0
A1
A2
A3
A4
CS1
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
NC
NC
NC
A20
A18
A17
A16
A15
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A14
A13
A12
A11
A10
A19
NC
NC
44
43
42
41
PIN CONFIGURATION
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. 00B
06/21/06
ISSI
IS62WV20488ALL
IS62WV20488BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to V
DD
+ 0.5
V
V
DD
V
DD
Relates to GND
0.3 to 4.0
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode
WE
WE
WE
WE
WE
CS1
CS1
CS1
CS1
CS1
CS2
OE
OE
OE
OE
OE
I/O Operation
V
DD
Current
Not Selected
X
H
X
X
High-Z
I
SB
1
, I
SB
2
(Power-down)
X
X
L
X
Output Disabled H
L
H
H
High-Z
I
CC
Read
H
L
H
L
D
OUT
I
CC
Write
L
L
H
X
D
IN
I
CC
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25C, f = 1 MHz, V
DD
= 3.3V.
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. 00B
06/21/06
ISSI
IS62WV20488ALL
IS62WV20488BLL
OPERATING RANGE (V
DD
) (IS62WV20488BLL)
(1)
Range
Ambient Temperature
V
DD
(25 n
S
)
Commercial
0C to +70C
2.4V-3.6V
Industrial
40C to +85C
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 25ns. When operated in
the range of 3.3V + 5%, the device meets 15ns.
OPERATING RANGE (V
DD
) (IS62WV20488ALL)
Range
Ambient Temperature
V
DD
(35 n
S
)
Commercial
0C to +70C
1.65V-2.2V
Industrial
40C to +85C
1.65V-2.2V
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. 00B
06/21/06
ISSI
IS62WV20488ALL
IS62WV20488BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.4V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 1.0 mA
1.8
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
A
Note:
1. V
IL
(min.) = 0.3V DC; V
IL
(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 1.65V-2.2V
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.65-2.2V
1.4
--
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.65-2.2V
--
0.2
V
V
IH
Input HIGH Voltage
1.65-2.2V
1.4
V
DD
+ 0.2
V
V
IL
(1)
Input LOW Voltage
1.65-2.2V
0.2
0.4
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
A
Note:
1. V
IL
(min.) = 0.3V DC; V
IL
(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
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