IS63WV1024LL

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. 00A
04/23/03

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

· High-speed access time: 20ns

· High-performance, low-power CMOS process

· Multiple center power and ground pins for

greater noise immunity

· Easy memory expansion with

and

options

power-down

· Fully static operation: no clock or refresh

required

· TTL compatible inputs and outputs

· Single 2.5V-3.6V V

power supply

· Packages available:

32-pin TSOP (Type II)

32-pin sTSOP (Type I)

36-Ball miniBGA (6mm x 8mm)

44-pin TSOP (Type II)

DESCRIPTION

The

ISSI

IS63WV1024LL is a very high-speed, low

power, 131,072-word by 8-bit CMOS static RAM. The
IS63WV1024LL is fabricated using

ISSI

high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input
levels.

The IS63WV1024LL operates from a single V

power

supply. The IS63WV1024LL is available in 32-pin TSOP
(Type II), 32-pin sTSOP (Type I), 36-Ball miniBGA (6mm
x 8mm), and 44-pin TSOP (Type II) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

128K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VDD

I/O

DATA

CIRCUIT

I/O0-I/O7

PRELIMINARY INFORMATION

APRIL 2003

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. 00A

04/23/03

IS63WV1024LL

ISSI

PIN CONFIGURATION

44-Pin TSOP (Type II) (T2)

PIN DESCRIPTIONS

A0-A16

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

I/O0-I/O7

Bidirectional Ports

Power

GND

Ground

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

A0
A1
A2
A3

I/O0
I/O1

VDD

GND

I/O2
I/O3

A4
A5
A6
A7

A16
A15
A14
A13

I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8

PIN CONFIGURATION

32-Pin TSOP (Type II) (T)
32-Pin sTSOP (Type I) (H)

PIN CONFIGURATION

36-mini BGA (B) (6 mm x 8 mm)

1 2 3 4 5 6

I/O4

I/O

I/O5

I/O

GND

VDD

GND

I/O6

I/O

I/O7

A16

A15

I/O

A10

A11

A12

A13

A14

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

NC
NC

A4
A3
A2
A1
A0

I/O0
I/O1

GND

I/O2
I/O3

A16
A15
A14
A13

NC
NC
NC

NC
NC
NC
A5
A6
A7
A8

I/O7
I/O6
GND
V

I/O5
I/O4
A9
A10
A11
A12
NC
NC
NC
NC

44
43
42
41

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. 00A
04/23/03

IS63WV1024LL

ISSI

TRUTH TABLE

Mode

I/O Operation

Current

Not Selected

High-Z

, I

(Power-down)

Output Disabled

High-Z

, I

Read

OUT

, I

Write

, I

OPERATING RANGE (V

)

Range

Ambient Temperature

IS63WV1024LL

Commercial

0°C to +70°C

2.5V-3.6V

Industrial

40°C to +85°C

2.5V-3.6V

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to V

+0.5

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.5

Related to GND

-0.2 to +3.9

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. 00A

04/23/03

IS63WV1024LL

ISSI

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 1.0 mA

2.2

Output LOW Voltage

= Min., I

= 1.0 mA

0.4

Input HIGH Voltage

2.2

+ 0.3

Input LOW Voltage

(1)

0.3

0.6

Input Leakage

GND

µA

Output Leakage

GND

OUT

, Outputs Disabled

µA

Notes:
1. V

(min.) = 2.0V for pulse width less than 10 ns.

CAPACITANCE

(1)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Input/Output Capacitance

OUT

= 0V

Note:
1. Tested initially and after any design or process changes that may affect these parameters.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-20 ns

Symbol Parameter

Test Conditions

Options

Min.

Max.

Unit

Dynamic Operating

= Max.,

COM

Supply Current

OUT

= 0 mA, f = f

MAX

IND

typ.

(2)

Operating Supply

= Max.,

COM

Current

Iout = 0mA, f = 0

IND

TTL Standby Current

= Max.,

COM

(TTL Inputs)

= V

or V

IND

, f = 0

CMOS Standby

= Max.,

COM

Current (CMOS Inputs)

0.2V,

IND

0.2V, or

typ.

(2)

0.2V, f = 0

Note:
1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

=2.5V, T

=25

C. Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. 00A
04/23/03

IS63WV1024LL

ISSI

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0.4V to V

-0.3V

Input Rise and Fall Times

1.5ns

Input and Output Timing

1.25V

and Reference Level (V

Ref

)

Output Load

See Figures 1a and 1b

AC TEST LOADS

Figure 1a.

Figure 1b.

30 pF
Including
jig and
scope

Zo=50

OUTPUT

Ref

319

5 pF

Including

jig and

scope

353

OUTPUT

2.5V

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