Integrated Silicon Solution, Inc. -- 1-800-379-4774
1
Advanced Information Rev. 00A
01/22/03
IS64C1024L
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
128K x 8 HIGH-SPEED
CMOS STATIC RAM
DESCRIPTION
The
ISSI
IS64C1024L is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAMs. It is fabricated
using
ISSI's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
The IS64C1024L is available in the following 32-pin
packages: 300-mil and 400-mil SOJ, and TSOP (Type I,
8x20).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
CE2
1024 BLK.eps
FEATURES
High-speed access time: 15 ns
Low active and standby power
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (10%) power supply
Temperature offerings:
Option A1: -40
o
C to +85
o
C
Option A2: -40
o
C to +105
o
C
Option A3: -40
o
C to +125
o
C
ADVANCED INFORMATION
JANUARY 2003
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Advanced Information Rev. 00A
01/22/03
IS64C1024L
ISSI
TRUTH TABLE
Mode
WE
WE
WE
WE
WE
CE1
CE1
CE1
CE1
CE1
CE2
OE
OE
OE
OE
OE
I/O Operation
V
DD
Current
Not Selected
X
H
X
X
High-Z
I
SB
1
, I
SB
2
(Power-down)
X
X
L
X
High-Z
I
SB
1
, I
SB
2
Output Disabled H
L
H
H
High-Z
I
CC
1
, I
CC
2
Read
H
L
H
L
D
OUT
I
CC
1
, I
CC
2
Write
L
L
H
X
D
IN
I
CC
1
, I
CC
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
DD
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
32-Pin SOJ
PIN DESCRIPTIONS
A0-A16
Address Inputs
CE1
Chip Enable 1 Input
CE2
Chip Enable 2 Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
V
DD
Power
GND
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CE2
A15
V
DD
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PIN CONFIGURATION
32-Pin TSOP (Type 1) (T)
Integrated Silicon Solution, Inc. -- 1-800-379-4774 3
Advanced Information Rev. 00A
01/22/03
IS64C1024L
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to +7.0
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.5
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 4.0 mA
2.4
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.2
V
DD
+ 0.5
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
--
--
A
5
5
I
LO
Output Leakage
GND
V
OUT
V
DD
--
--
A
Outputs Disabled
5
5
Note:
1. V
IL
= 3.0V for pulse width less than 10 ns.
OPERATING RANGE
Options
Ambient Temperature
IS64C1024L
A1
40C to +85C
4.5V - 5.5V
A2
40C to +105C
4.5V - 5.5V
A3
40C to +125C
4.5V - 5.5V
4
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Advanced Information Rev. 00A
01/22/03
IS64C1024L
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-15 ns
Symbol
Parameter
Test Conditions
Options
Min.
Max.
Unit
I
CC
1
V
DD
Operating
V
DD
= V
DD
MAX
.,
CE
= V
IL
A1
--
90
mA
Supply Current
I
OUT
= 0 mA, f = 0
A2
--
95
A3
--
100
I
CC
2
V
DD
Dynamic Operating
V
DD
= V
DD
MAX
.,
CE
= V
IL
A1
--
150
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
A2
--
155
A3
--
160
I
SB
1
TTL Standby Current
V
DD
= V
DD
MAX
,
A1
--
30
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
A2
--
40
CE1
V
IH
, f = 0 or
A3
--
45
CE2
V
IL
, f = 0
I
SB
2
CMOS Standby
V
DD
= V
DD
MAX
.,
A1
--
1.0
mA
Current (CMOS Inputs)
CE1
V
DD
0.2V,
A2
--
2
CE2
0.2V
A3
--
3
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25C, f = 1 MHz, V
DD
= 5.0V.
Integrated Silicon Solution, Inc. -- 1-800-379-4774 5
Advanced Information Rev. 00A
01/22/03
IS64C1024L
ISSI
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-15 ns
Symbol
Parameter
Min.
Max.
Unit
t
RC
Read Cycle Time
15
--
ns
t
AA
Address Access Time
--
15
ns
t
OHA
Output Hold Time
2
--
ns
t
ACE
1
CE1
Access Time
--
15
ns
t
ACE
2
CE2 Access Time
--
15
ns
t
DOE
OE
Access Time
--
7
ns
t
LZOE
(3)
OE
to Low-Z Output
0
--
ns
t
HZOE
(3)
OE
to High-Z Output
0
6
ns
t
LZCE
1
(3)
CE1
to Low-Z Output
2
--
ns
t
LZCE
2
(3)
CE2 to Low-Z Output
2
--
ns
t
HZCE
(3)
CE1
or CE2 to High-Z Output
0
8
ns
t
PU
(4)
CE1
or CE2 to Power-Up
0
--
ns
t
PD
(4)
CE1
or CE2 to Power-Down
--
12
ns
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Figure 1
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
Figure 2
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
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