ISSI
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
12/01/05
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS63WV1024BLL
IS64WV1024BLL
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V 3.6V
High-performance, low-power CMOS process
CMOS Low Power Operation
50 mW (typical) operating current
25
W (typical) standby current
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Packages available:
32-pin TSOP (Type II)
32-pin sTSOP (Type I)
36-Ball miniBGA (6mm x 8mm)
32-pin 300-mil SOJ
Lead-free available
DESCRIPTION
The
ISSI
IS63/64WV1024BLL is a very high-speed, low
power, 131,072-word by 8-bit CMOS static RAM. The
IS63/64WV1024BLL is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 25 W (typical) with CMOS input levels.
The IS63/64WV1024BLL operates from a single V
DD
power supply. The IS63/64WV1024BLL is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 36-Ball
miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE
OE
WE
128K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
DECEMBER 2005
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
12/01/05
ISSI
IS63WV1024BLL
IS64WV1024BLL
PIN DESCRIPTIONS
A0-A16
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Bidirectional Ports
V
DD
Power
GND
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A4
A5
A6
A7
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8
PIN CONFIGURATION
32-Pin TSOP (Type II) (T)
32-Pin sTSOP (Type I) (H)
PIN CONFIGURATION
36-mini BGA (B) (6 mm x 8 mm)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A0
A1
NC
A3
A6
A8
I/O4
A2
WE
A4
A7
I/O
0
I/O5
NC
A5
I/O
1
GND
VDD
VDD
GND
I/O6
NC
NC
I/O
2
I/O7
OE
CE
A16
A15
I/O
3
A9
A10
A11
A12
A13
A14
PIN CONFIGURATION
32-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A4
A5
A6
A7
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
12/01/05
ISSI
IS63WV1024BLL
IS64WV1024BLL
TRUTH TABLE
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
I/O Operation
V
DD
Current
Not Selected
X
H
X
High-Z
I
SB
1
, I
SB
2
(Power-down)
Output Disabled
H
L
H
High-Z
I
CC
1
, I
CC
2
Read
H
L
L
D
OUT
I
CC
1
, I
CC
2
Write
L
L
X
D
IN
I
CC
1
, I
CC
2
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
V
DD
(15 ns)
V
DD
(12 ns)
Commercial
0C to +70C
2.5V-3.6V
3.3V + 10%
Industrial
40C to +85C
2.5V-3.6V
3.3V + 10%
Automotive
40C to +125C
2.5V-3.6V
3.3V + 10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.5 to V
DD
+0.5
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.5
W
V
DD
V
DD
Related to GND
-0.2 to +3.9
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
12/01/05
ISSI
IS63WV1024BLL
IS64WV1024BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 1.0 mA
2.3
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
2
2
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
2
2
A
Note:
1. V
IL
(min.) = 0.3V DC; V
IL
(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= 4.0 mA
2.4
--
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
--
0.4
V
V
IH
Input HIGH Voltage
2
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
2
2
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
2
2
A
Note:
1. V
IL
(min.) = 0.3V DC; V
IL
(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
12/01/05
ISSI
IS63WV1024BLL
IS64WV1024BLL
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
-15 ns
Symbol Parameter
Test Conditions
Options
Min.
Max.
Min.
Max.
Unit
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
COM
.
--
35
--
30
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
IND
.
--
45
--
40
AUTO
--
60
--
50
typ.
(2)
--
20
--
20
I
CC
1
Operating Supply
V
DD
= Max.,
COM
.
--
5
--
5
mA
Current
Iout = 0mA, f = 0
IND
.
--
5
--
5
AUTO
--
5
--
5
I
SB
1
TTL Standby Current
V
DD
= Max.,
COM
.
--
3
--
3
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
IND
.
--
4
--
4
CE
V
IH
, f = 0
AUTO
--
4
--
4
I
SB
2
CMOS Standby
V
DD
= Max.,
COM
.
--
20
--
20
uA
Current (CMOS Inputs)
CE
V
DD
0.2V,
IND
.
--
50
--
50
V
IN
V
DD
0.2V, or
AUTO
--
75
--
75
V
IN
0.2V, f = 0
typ.
(2)
--
6
--
6
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=2.5V, T
A
=25
o
C. Not 100% tested.
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