2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
-500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
-500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
10P50
-10
A
11P50
-11
A
I
DM
T
C
= 25
C, pulse width limited by T
J
10P50
-40
A
11P50
-44
A
I
AR
T
C
= 25
C
10P50
-10
A
11P50
-11
A
E
AR
T
C
= 25
C
30
mJ
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
6
g
TO-268
4
g
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
V
DSS
V
GS
= 0 V, I
D
= -250
A
-500
V
BV
DSS
Temperature Coefficient
0.054
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= -250
A
-3.0
-5.0
V
V
GS(th)
Temperature Coefficient
-0.122
%/K
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
-200
A
V
GS
= 0 V
T
J
= 125
C
-1
mA
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
10P50
0.90
11P50
0.75
R
DS(on)
Temperature Coefficient
0.6 %/K
DS94535H(02/03)
TO-247 AD (IXTH)
G = Gate
D = Drain
S = Source
TAB = Drain
TO-268
(IXTT)
Case Style
(TAB)
G
S
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
D
V
DSS
I
D25
R
DS(on)
IXTH/IXTT 10P50
-500 V -10 A 0.90
IXTH/IXTT 11P50
-500 V -11 A 0.75
(TAB)
D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXTH/IXTT 10P50
IXTH/IXTT 11P50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= -10 V; I
D
= I
D25
, pulse test
5
9
S
C
iss
4700
pF
C
oss
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
430
pF
C
rss
135
pF
t
d(on)
33
ns
t
r
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
ns
t
d(off)
R
G
= 4.7
(External)
35
ns
t
f
35
ns
Q
G(on)
130
nC
Q
GS
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
46
nC
Q
GD
92
nC
R
thJC
0.42
K/W
R
thCS
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0
10P50
-10
A
11P50
-11
A
I
SM
Repetitive; pulse width limited by T
JM
10P50
-40
A
11P50
-44
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
-3
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, di/dt = 100 A/
s
500
ns
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
2003 IXYS All rights reserved
Fig. 1. Output Cha ra cte ristics
@ 25 De g. C
-12
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
V
DS
- V olts
I
D
- Am
pe
re
s
V
GS
= -10V
-9V
-8V
-7V
-5V
-6V
Fig. 4. R
DS(ON)
Normalized to I
D25
Value
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
-50
-25
0
25
50
75
100 125 150
T
J
- Degrees Centigrade
R
DS
(
O
N)
- N
o
rma
liz
e
d
I
D
= -11A
I
D
= -5.5A
V
GS
= -10V
F ig. 5. R
D S(O N )
Norm a liz e d to I
D 25
V a lu e vs. I
D
0 .6
1
1 .4
1 .8
2 .2
2 .6
-2 5
-2 0
-1 5
-1 0
-5
0
I
D
- Am pe re s
R
DS
(O
N)
- Normaliz
ed
T
J
=1 25
C
T
J
=2 5
C
V
GS
= -1 0V
Fig. 6. Input Adm itta nce
-18
-15
-12
-9
-6
-3
0
-7.5
-7
-6.5
-6
-5.5
-5
-4.5
V
GS
- Volts
I
D
- Amp
e
re
s
T
J
= -40
C
25
C
125
C
Fig. 2. Ex te nde d Output Cha ra cte ristics
@ 25 De g. C
-24
-20
-16
-12
-8
-4
0
-20
-16
-12
-8
-4
0
V
DS
- Volts
I
D
- A
m
p
e
res
V
GS
= -10V
-9V
-8V
-5V
-6V
-7V
Fig. 3. Output Characteristics
@ 125 Deg. C
-12
-10
-8
-6
-4
-2
0
-18
-15
-12
-9
-6
-3
0
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= -10V
-9V
-8V
-7V
-5V
-6V
IXTH/IXTT 10P50
IXTH/IXTT 11P50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXTH/IXTT 10P50
IXTH/IXTT 11P50
Fig. 7. Tra nsconducta nce
0
5
10
15
20
25
-30
-25
-20
-15
-10
-5
0
I
D
- Am peres
G
fs
-
S
i
emen
s
T
J
= 25
C
T
J
= -40
C
T
J
= 125
C
Fig. 8. S ource Curre nt vs. Source -To-
Dra in V olta ge
0
10
20
30
40
50
0.5
1
1.5
2
2.5
3
3.5
V
SD
- Volts
I
S
- Am
pe
re
s
T
J
=125
C
T
J
=25
C
Fig. 9. Gate Charge
-10
-8
-6
-4
-2
0
0
25
50
75
100
125
Q
G
- nanoCoulombs
V
GS
- Vo
lts
V
DS
= -250V
I
D
= -5.5A
I
G
= -1m A
Fig. 10. Capacitance
100
1000
10000
-40
-30
-20
-10
0
V
DS
- Volts
C
a
paci
t
a
nce -
pF
Ciss
Coss
Crss
f=1Mhz
Fig. 14. M a x im um Tra nsie nt The rm a l Re sista nce
0.01
0.1
1
1
10
100
1000
Pulse W idth - m illiseconds
R
(TH)J
C
-
(C/W)
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