2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
900
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
900
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
24
A
I
C90
T
C
= 90
C
12
A
I
CM
T
C
= 25
C, 1 ms
48
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 24
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque with screw M3
0.45/4 Nm/lb.in.
Mounting torque with screw M3.5
0.55/5 Nm/lb.in.
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Weight
6
g
Features
Very high frequency IGBT
New generation HDMOS
TM
process
International standard package
High peak current handling capability
Applications
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
98582B(03/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
900
V
V
GE(th)
I
C
= 250
A, V
GE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
100
A
V
GE
= 0 V
T
J
= 125
C
1.5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
3.0
V
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
TO-247 (IXGH)
C (TAB)
G
C
E
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
IXGH 12N90C
V
CES
= 900 V
IXGX 12N90C
I
C25
= 24 A
V
CES(sat)
= 3.0 V
t
fi(typ)
= 70 ns
(TAB)
PLUS 247 (IXGX)
G
D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
5
10
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
780
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
60
pF
C
res
15
pF
Q
g
33
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
10
nC
Q
gc
12
nC
t
d(on)
20
ns
t
ri
20
ns
t
d(off)
135
200
ns
t
fi
70
180
ns
E
off
0.32
0.70
mJ
t
d(on)
20
ns
t
ri
20
ns
E
on
0.15
mJ
t
d(off)
200
ns
t
fi
150
ns
E
off
0.70
mJ
R
thJC
1.25 K/W
R
thCK
TO-247
0.25
K/W
PLUS 247
0.15
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 22
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 22
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXGH 12N90C
IXGX 12N90C
TO-247 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
PLUS 247 Outline
2003 IXYS All rights reserved
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
p
e
re
s
0
10
20
30
40
50
T
J
= 25
O
C
7V
V
GE
= 15V
13V
11V
9V
V
GE
= 15V
T
J
- Degrees C
-25
0
25
50
75
100 125 150
V
CE
(
S
A
T
)
-
N
o
r
m
aliz
e
d
0.8
1.0
1.2
1.4
1.6
I
C
= 24A
I
C
= 12A
I
C
= 6A
V
CE
- Volts
0
5
10
15
I
C
- A
m
pe
r
e
s
0
25
50
75
100
T
J
= 25
o
C
13V
V
GE
= 15V
11V
9V
7V
5V
V
CE
- Volts
0
5
10
15
20
25
30
35
40
C
a
p
a
c
i
t
a
nc
e
-
pF
10
100
1000
V
GE
- Volts
4
5
6
7
8
9
10
11
12
I
C
- A
m
pe
r
e
s
0
5
10
15
20
25
30
35
40
45
50
55
60
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -40
o
C
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
p
e
r
e
s
0
10
20
30
40
50
T
J
= 125
O
C
5V
7V
V
GE
= 15V
13V
11V
9V
Ciss
Coss
Crss
Fig. 1. Saturation Voltage Characteristics @ 25
o
C
Fig. 2. Extended Output Characteristics
Fig. 3. Saturation Voltage Characteristics @ 125
o
C
Fig. 4. Temperature Dependence of V
CE(SAT)
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
IXGH 12N90C
IXGX 12N90C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 7. Dependence of E
OFF
on I
C
Fig. 8. Dependence of E
OFF
on R
G
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. Transient Thermal Resistance
Pulse Width - Seconds
0.001
0.01
0.1
1
Z
th
J
C
(
K
/W
)
0.01
0.1
1
10
V
CE
- Volts
0
200
400
600
800
1000
I
C
- A
m
p
e
r
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
10
20
30
40
V
GE
- Volts
0
2
4
6
8
10
12
14
16
R
G
- Ohms
0
10
20
30
40
50
60
E
(OF
F
)
- m
ill
ijou
l
e
s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
C
- Amperes
5
10
15
20
25
E
(OF
F
)
-
m
illijo
ule
s
0.0
0.5
1.0
1.5
2.0
V
CE
= 450V
I
C
= 12A
T
J
= -55 to +125C
R
G
= 10
dV/dt < 5V/ns
Single pulse
R
G
= 10
T
J
= 125C
24
T
J
= 125C
I
C
= 12A
E
(OFF)
I
C
= 6A
I
C
= 24A
E
(OFF)
E
(OFF)
E
(OFF)
IXGH 12N90C
IXGX 12N90C
PDF 
ZIP