2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
1200
1200
DSEK 60-12A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
50
A
I
FAVM
x
T
C
= 85
C; rectangular, d = 0.5
26
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
375
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
200
A
t = 8.3 ms (60 Hz), sine
210
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
185
A
t = 8.3 ms (60 Hz), sine
195
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
200
A
2
s
t = 8.3 ms (60 Hz), sine
180
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
170
A
2
s
t = 8.3 ms (60 Hz), sine
160
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
125
W
M
d
Mounting torque
0.8...1.2
Nm
Weight
6
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
750
m
A
T
VJ
= 25
C
V
R
= 0.8 V
RRM
250
m
A
T
VJ
= 125
C
V
R
= 0.8 V
RRM
7
mA
V
F
I
F
= 30 A;
T
VJ
= 150
C
2.2
V
T
VJ
= 25
C
2.55
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= T
VJM
18.2
m
W
R
thJC
0.9
K/W
R
thCK
0.25
K/W
R
thJA
70
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V; T
VJ
= 25
C
40
60
ns
I
RM
V
R
= 540 V;
I
F
= 30 A; -di
F
/dt = 240 A/
m
s
16
18
A
L
0.05
m
H; T
VJ
= 100
C
DSEK 60
I
FAVM
= 2x 26 A
V
RRM
= 1200 V
t
rr
= 40 ns
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package
JEDEC TO-247 AD
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behavior
q
Epoxy meets UL 94V-0
Applications
q
Rectifiers in switch mode power
supplies (SMPS)
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
q
Operating at lower temperature or
space saving by reduced cooling
Common Cathode
Fast Recovery
Epitaxial Diode (FRED)
TO-247 AD
C (TAB)
C
A
A = Anode, C = Cathode, TAB = Cathode
A
A C A
036
2000 IXYS All rights reserved
2 - 2
DSEK 60, 1200 V
M
N
Dimensions
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
s
t
Z
thJC
K/W
0
200
400
600
0
10
20
30
40
50
60
T
VJ
=125C
I
F
=30A
di
F
/dt
t
fr
V
FR
t
fr
ns
0
200
400
600
800
1000
1200
V
V
FR
0
200
400
600
0.0
0.2
0.4
0.6
0.8
1.0
-di
F
/dt
t
rr
typ.
max.
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
Q
R
I
RM
C
T
J
0
200
400
600
0
10
20
30
40
50
A
max.
typ.
1
10
100
1000
0
1
2
3
4
5
6
C
I
RM
-di
F
/dt
Q
r
0
1
2
3
4
0
10
20
30
40
50
60
70
V
V
F
I
F
T
VJ
=150C
T
VJ
=100C
T
VJ
=25C
A
I
F
=15A
I
F
=30A
I
F
=60A
I
F
=30A
V
R
= 540V
T
VJ
=100C
max.
typ.
I
F
=15A
I
F
=30A
I
F
=60A
I
F
=30A
T
VJ
=100C
V
R
= 540V
V
R
=540V
T
VJ
=100C
I
F
=15A
I
F
=30A
I
F
=60A
I
F
=30A
s
A/s
-di
F
/dt
A/s
A/s
A/s
Fig. 1 Forward current
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Fig. 4 Dynamic parameters versus
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
junction temperature.
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780
0.800
B
20.80 21.46
0.819
0.845
C
15.75 16.26
0.610
0.640
D
3.55
3.65
0.140
0.144
E
4.32
5.49
0.170
0.216
F
5.4
6.2
0.212
0.244
G
1.65
2.13
0.065
0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040
0.055
K
10.8
11.0
0.426
0.433
L
4.7
5.3
0.185
0.209
M
0.4
0.8
0.016
0.031
N
2.2
2.54
0.087
0.102
PDF 
ZIP