1 - 4
2000 IXYS All rights reserved
C (TAB)
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
TO-247 AD (IXGH)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.7
2.0
V
96533B (7/99)
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
40
A
I
C90
T
C
= 90
C
20
A
I
CM
T
C
= 25
C, 1 ms
80
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
W
I
CM
= 40
A
(RBSOA)
Clamped inductive load, L = 100
m
H
@ 0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead and Tab temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
Preliminary data sheet
HiPerFAST
TM
IGBT
Features
International standard packages
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw,TO-247
(isolated mounting screw hole)
IXGH 20N60B
IXGT 20N60B
TO-268 (D3) (IXGT)
(TAB)
G
E
V
CES
= 600
V
I
C25
= 40
A
V
CE(sat)typ
= 1.7
V
t
fi(typ)
= 100 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
W
Note 1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
9
17
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
1500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
175
pF
C
res
40
pF
Q
g
90
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
11
nC
Q
gc
30
nC
t
d(on)
15
ns
t
ri
35
ns
E
on
0.15
mJ
t
d(off)
150
200
ns
t
fi
100
150
ns
E
off
Note 1
0.7
1.0
mJ
t
d(on)
15
ns
t
ri
35
ns
E
on
0.15
mJ
t
d(off)
220
ns
t
fi
140
ns
E
off
1.2
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Note 1: Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXGH 20N60B
IXGT 20N60B
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
V
CE
- Volts
0
1
2
3
4
5
I
C
-
A
m
eres
0
20
40
60
80
100
V
CE
-Volts
0
5
10
15
20
25
30
35
40
Capac
i
t
a
nce -
pF
10
100
1000
T
J
- Degrees C
25
50
75
100
125
150
V
CE
(
s
a
t
)
-
Norm
al
i
z
ed
0.50
0.75
1.00
1.25
1.50
1.75
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
p
e
r
e
s
0
20
40
60
80
100
V
GE
- Volts
3
4
5
6
7
8
9
10
I
C
- A
m
per
es
0
20
40
60
80
100
V
CE
- Volts
0
2
4
6
8
10
I
C
-
A
m
per
es
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
V
GE
= 15V
13V
11V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
I
C
= 10A
I
C
= 20A
I
C
= 40A
T
J
=
125C
f = 1Mhz
5V
5V
V
GE
= 15V
T
J
= 25C
T
J
= 125C
7V
9V
5V
9V
V
GE
= 15V
13V
11V
C
iss
C
oss
C
rss
7V
4000
IXGH 20N60B
IXGT 20N60B
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of V
CE(sat)
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
4 - 4
2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
JC
(K
/W)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
-
A
m
p
e
r
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
20
40
60
80
100
V
GE
-
Vo
lts
0
3
6
9
12
15
R
G
- Ohms
0
10
20
30
40
50
60
E
(
O
FF)
-
mill
ijoul
es
0
2
4
6
8
E
(ON)
- mi
llijo
ules
0
1
2
3
4
I
C
- Amperes
0
10
20
30
40
50
E
(O
F
F
)
- mi
lliJou
les
0
1
2
3
4
5
6
E
(ON)
- m
illij
oules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 300V
I
C
= 10A
I
C
= 20A
E
(ON)
E
(OFF)
T
J
= -55 to +125C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
T
J
= 125C
40
E
(ON)
I
C
=40A
E
(OFF)
T
J
= 125C
E
(ON)
I
C
= 20A
E
(ON)
E
(OFF)
E
(OFF)
Fig. 7. Dependence of E
ON
and E
OFF
on I
C
.
Fig. 8. Dependence of E
ON
and E
OFF
on R
G
.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case
IXGH 20N60B
IXGT 20N60B
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