2002 IXYS All rights reserved
TO-264 AA (IXFK)
S
G
D
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
miniBLOC,
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
DSS
temperature coefficient
0.096
%/K
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4.5
V
V
GS(th)
temperature coefficient
-0.214
%/K
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
500
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
s,
25N80
0.35
duty cycle d
2 %
27N80
0.30
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
T
J
= 25
C to 150
C
800
800
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
800
800
V
V
GS
Continuous
20
20
V
V
GSM
Transient
30
30
V
I
D25
T
C
= 25
C, Chip capability
27N80
27
27
A
25N80
25
25
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
27N80 108
108
A
T
C
= 25
C
25N80 100
100
A
I
AR
27N80
14
14
A
25N80
13
13
A
E
AR
T
C
= 25
C
30
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
500
520
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
-
C
V
ISOL
50/60 Hz, RMS
t = 1 min
-
2500
V~
I
ISOL
1 mA
t = 1 s
-
3000
V~
M
d
Mounting torque
0.9/6
1.5/13 Nm/lb.in.
Terminal connection torque
-
1.5/13 Nm/lb.in.
Weight
10
30
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
95561D(6/02)
V
DSS
I
D25
R
DS(on)
IXFK 27N80
800 V
27 A
0.30
IXFK 25N80
800 V
25 A
0.35
IXFN 27N80
800 V
27 A
0.30
IXFN 25N80
800 V
25 A
0.35
Not for New Designs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFK 25N80
IXFK 27N80
IXFN 25N80
IXFN 27N80
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
16
28
S
C
iss
7930 8400 9740
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
630
712 790
pF
C
rss
146
192 240
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
80
ns
t
d(off)
R
G
= 1
(External),
75
ns
t
f
40
ns
Q
g(on)
320
350 400
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
38
46
56
nC
Q
gd
120
130 142
nC
R
thJC
TO-264 AA
0.25
K/W
R
thCK
TO-264 AA
0.15
K/W
R
thJC
miniBLOC, SOT-227 B
0.24
K/W
R
thCK
miniBLOC, SOT-227 B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
27N80
27
A
25N80
25
A
I
SM
Repetitive;
27N80
108
A
pulse width limited by T
JM
25N80
100
A
V
SD
I
F
= 100 A, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V T
J
=25
C
250
ns
T
J
=125
C
400
ns
Q
RM
T
J
=25
C
2
C
I
RM
17
A
2002 IXYS All rights reserved
IXFK 25N80
IXFK 27N80
IXFN 25N80
IXFN 27N80
I
D
- Amperes
0
10
20
30
40
50
R
DS
(
O
N
)
-
N
o
r
m
aliz
ed
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
GS
- Volts
2
3
4
5
6
7
I
D
- A
m
p
e
re
s
0
5
10
15
20
25
30
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
- A
m
p
e
re
s
0
5
10
15
20
25
30
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(O
N)
- N
o
r
m
a
l
ized
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
DS
- Volts
0
4
8
12
16
20
I
D
- A
m
peres
0
10
20
30
40
V
DS
- Volts
0
2
4
6
8
10
I
D
- A
m
peres
0
10
20
30
40
4V
V
GS
= 10V
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
5V
5V
4V
T
J
= 25
o
C
I
D
= 27A
T
J
= 25
O
C
IXFK27N80
IXFN27N80
T
J
= 125
o
C
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
IXF_25N80
I
D
= 13.5A
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value
vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFK 25N80
IXFK 27N80
IXFN 25N80
IXFN 27N80
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
pac
i
t
a
nce - pF
100
1000
10000
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- A
m
peres
0
20
40
60
80
100
Gate Charge - nC
0
100
200
300
400
500
V
GS
- V
o
lts
0
2
4
6
8
10
12
Vds=300V
I
D
=30A
I
G
=10mA
Coss
T
J
= 25
O
C
V
DS
= 400V
I
D
= 27A
I
G
= 1mA
f = 1MHz
T
J
= 125
O
C
Ciss
Crss
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Transient Thermal Resistance
Pulse Width - Seconds
0.0001
0.001
0.01
0.1
1
10
R(th
)
JC
-
K/W
0.001
0.01
0.1
1
Single pulse
D = Duty Cycle
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
D=0.2
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