1997 IXYS All rights reserved
TO-247 SMD
(32N50BS)
G
E
C (TAB)
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High current handling capability
l
Newest generation HDMOS
TM
process
l
MOS Gate turn-on
- drive simplicity
Applications
l
PFC circuits
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
High power density
l
Very fast switching speeds for high
frequency applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
500
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
500
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
500
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
60
A
I
C90
T
C
= 90
C
32
A
I
CM
T
C
= 25
C, 1 ms
120
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 64
A
(RBSOA)
Clamped inductive load, L = 100
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
6
g
TO-247 SMD
4
g
Preliminary Data Sheet
HiPerFAST
TM
IGBT
IXGH32N50B
IXGH32N50BS
V
CES
=
500 V
I
C25
=
60 A
V
CE(sat)
=
2.0 V
t
fi
=
80 ns
95564A (4/97)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH32N50B
IXGH32N50BS
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
P
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
15
20
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
230
pF
C
res
70
pF
Q
g
125
150
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
35
nC
Q
gc
50
75
nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
100
200
ns
t
fi
80
150
ns
E
off
0.7
1.5
mJ
t
d(on)
25
ns
t
ri
35
ns
E
on
0.3
mJ
t
d(off)
120
ns
t
fi
120
ns
E
off
1.2
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
TO-247 AD Outline
TO-247 SMD Outline
Min. Recommended Footprint (Dimensions in inches and (mm))
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