1997 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
500
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
500
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
60
A
I
C90
T
C
= 90
C
32
A
I
CM
T
C
= 25
C, 1 ms
120
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 64
A
(RBSOA)
Clamped inductive load, L = 100
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead and Tab temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
Weight
TO-247 SMD
4
g
TO-247 AD
6
g
Preliminary Data Sheet
HiPerFAST
TM
IGBT
with Diode
Combi Pack
V
CES
=
500 V
I
C25
=
60 A
V
CE(sat)
=
2.0 V
t
fi
=
80 ns
IXGH32N50BU1
IXGH32N50BU1S
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
A, V
GE
= 0 V
500
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
500
A
V
GE
= 0 V
T
J
= 125
C
8
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
V
E
TO-247 SMD
(32N50BU1S)
G
C (TAB)
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High frequency IGBT and antiparallel
FRED in one package
l
High current handling capability
l
Newest generation HDMOS
TM
process
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
High power density
l
Very fast switching speeds for high
frequency applications
95565A (4/97)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH32N50BU1
IXGH32N50BU1S
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
15
20
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
270
pF
C
res
70
pF
Q
g
125
150
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
35
nC
Q
gc
50
75
nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
100
200
ns
t
fi
80
150
ns
E
off
0.7
1.5
mJ
t
d(on)
25
ns
t
ri
35
ns
E
on
1
mJ
t
d(off)
120
ns
t
fi
120
ns
E
off
1.2
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.6
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 240 A/
s
10
15
A
t
rr
V
R
= 360 V
T
J
=125
C
150
ns
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V T
J
=25
C
35
50
ns
R
thJC
1 K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Min. Recommended Footprint (Dimensions in inches and (mm))
TO-247 AD Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
P
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
TO-247 SMD Outline
PDF 
ZIP