1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
30N50
30
A
32N50
I
DM
T
C
= 25
C, Pulse width limited by T
JM
30N50
120
A
32N50
I
AR
T
C
= 25
C
30N50
30
A
32N50
E
AS
T
C
= 25
C
1.5
J
E
AR
T
C
= 25
C
45
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
310
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
30N50
0.16
W
Notes 1, 2
32N50
0.15
W
98608B (7/00)
ISOPLUS 247
TM
G
D
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
D = Drain
S = Source
* Patent pending
Isolated back surface*
V
DSS
I
D25
R
DS(on)
IXFR 30N50Q
500 V
29 A
0.16
W
IXFR 32N50Q
500 V
30 A
0.15
W
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
rr
, HDMOS
TM
Family
E 153432
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= I
T
Note 2
18
28
S
C
iss
3950
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
pF
C
rss
210
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
42
ns
t
d(off)
R
G
= 1
W
(External),
75
ns
t
f
20
ns
Q
g(on)
150
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
26
nC
Q
gd
85
nC
R
thJC
0.40
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
32
A
I
SM
Repetitive; pulse width limited by T
JM
128
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
0.75
m
C
I
RM
7.5
A
I
F
= I
s
,
-di/dt = 100 A/ms,
V
R
= 100 V
Note: 1.
I
T
test condition:
IXFR30N50: I
T
= 15A
IXFR32N50: I
T
= 16A
IXFR 30N50Q
IXFR 32N50Q
Note: 2.
Pulse test, t
300
m
s,
duty cycle d
2 %
ISOPLUS 247 (IXFR) OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
S
13.21
13.72
.520 .540
T
15.75
16.26
.620 .640
U
1.65
3.03
.065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
-
A
m
pe
re
s
0
8
16
24
32
40
V
GS
- Volts
2
3
4
5
6
I
D
-
A
m
pe
r
e
s
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
DS(
O
N)
-
No
r
m
ali
z
ed
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 16A
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
pe
re
s
0
10
20
30
40
50
V
DS
- Volts
0
4
8
12
16
20
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
60
70
80
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 125
o
C
6V
5V
6V
V
GS
=10V
9V
8V
7V
V
GS
= 9V
8V
7V
I
D
= 32A
T
J
= 25
o
C
I
D
- Amperes
0
10
20
30
40
50
60
R
DS
(
O
N
)
-
No
rmal
iz
e
d
0.8
1.2
1.6
2.0
2.4
2.8
Tj=125
0
C
Tj=25
0
C
V
GS
= 10V
4V
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFR 30N50Q
IXFR 32N50Q
4 - 4
2000 IXYS All rights reserved
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R(
th
)
JC
-
K
/
W
0.02
0.04
0.06
0.08
0.20
0.40
0.60
0.01
0.10
V
DS
- Volts
0
5
10
15
20
25
C
a
pa
c
i
ta
nc
e
-
pF
100
1000
10000
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
I
D
-
Am
p
e
r
e
s
0
20
40
60
80
100
T
J
=125
O
C
T
J
=25
O
C
Gate Charge - nC
0
50
100
150
200
250
V
GS
-
V
o
l
ts
0
2
4
6
8
10
12
14
Vds=300V
I
D
=30A
I
G
=10mA
F = 1MHz
Crss
Coss
Ciss
V
GS
= 0V
T
J
=25
O
C
Vds=300V
I
D
=16A
I
G
=10mA
F = 1MHz
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFR 30N50Q
IXFR 32N50Q
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