IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXGH 32N60AU1
IXGH 32N60AU1S
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
60
A
I
C90
T
C
= 90
C
32
A
I
CM
T
C
= 25
C, 1 ms
120
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 64
A
(RBSOA)
Clamped inductive load, L = 100
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead and Tab temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
Weight
TO-247 SMD
4
g
TO-247 AD
6
g
1996 IXYS Corporation. All rights reserved.
92794H (3/96)
C (TAB)
G = Gate
C = Collector
E = Emitter
TAB = Collector
G
C
E
TO-247 AD
G
E
C (TAB)
Features
q
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
q
High frequency IGBT and antiparallel
FRED in one package
q
High current handling capability
q
2nd generation HDMOS
TM
process
q
MOS Gate turn-on
- drive simplicity
Applications
q
AC motor speed control
q
DC servo and robot drives
q
DC choppers
q
Uninterruptible power supplies (UPS)
q
Switched-mode and resonant-mode
power supplies
Advantages
q
Space savings (two devices in one
package)
q
High power density
q
Suitable for surface mounting
q
Switching speed for high frequency
applications
q
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
V
CES
= 600 V
I
C25
= 60 A
V
CE(sat)
= 2.9V
t
fi
= 125 ns
TO-247 SMD
(32N60AU1S)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
500
A
V
GE
= 0 V
T
J
= 125
C
8
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.9
V
HiPerFAST
TM
IGBT
with Diode
Combi Pack
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXGH 32N60AU1
IXGH 32N60AU1S
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
P
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
e
P
Min. Recommended Footprint
(Dimensions in inches and mm)
TO-247 SMD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
15
20
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
270
pF
C
res
70
pF
Q
g
125
150
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
35
nC
Q
gc
50
75
nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
120
200
ns
t
fi
125
175
ns
E
off
1.8
mJ
t
d(on)
25
ns
t
ri
35
ns
E
on
1
mJ
t
d(off)
140
ns
t
fi
260
ns
E
off
4
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.6
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 240 A/
s
10
15
A
t
rr
V
R
= 360 V
T
J
= 125
C
150
ns
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V T
J
= 25
C
35
50
ns
R
thJC
1 K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXYS reserves the right to change limits, test conditions, and dimensions.
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